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    EXCEL SEMICONDUCTOR INC Search Results

    EXCEL SEMICONDUCTOR INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    EXCEL SEMICONDUCTOR INC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Teradyne

    Abstract: teradyne tester test system ziatech
    Text: ISP Cost-of-Ownership Click on one of the following choices: • • • • ISP Cost-of-Ownership Excel v.5 Worksheet Excel v.4 Worksheet Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. TM ISP Cost-of-Ownership Analysis ISP Cost-of-Ownership


    Original     		PDF

    irf44z

    Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
    Text: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced


    Original     		PDF AN1520/D AN1520 AN1520/D* irf44z 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent

    ES25P40

    Abstract: No abstract text available
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P40 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		PDF ES25P40 75Mhz 66MHz 75MHz. ES25P40

    ES25P16

    Abstract: SA28 SA29 SA30 208mil
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P16 16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		PDF ES25P16 16Mbit 75Mhz 66MHz 75MHz ES25P16 SA28 SA29 SA30 208mil

    E0000

    Abstract: ES25P80 SA10 SA11 SA12 SA13 SA14 SA15
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		PDF ES25P80 75Mhz 66MHz 75MHz. E0000 ES25P80 SA10 SA11 SA12 SA13 SA14 SA15

    ES29LV160DB-90TG

    Abstract: si 462 laser diode ES29LV160D 12wg ES29LV160DT
    Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC


    Original     		PDF ES29LV160D 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160DT ES29LV160DB 48-pin 48-ball ES29LV160DB-90TG si 462 laser diode ES29LV160D 12wg

    ES29DL320

    Abstract: 3FE00
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz


    Original     		PDF ES29DL320 32Mbit 125oC ES29DL320 3FE00

    ES29LV400D

    Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
    Text: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		PDF ES29LV400D 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400DT ES29LV400DB 48-pin ES29LV400D ES29LV400DT-70RTG ES29LV400DB-70RTG

    ES29LV160D

    Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
    Text: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		PDF ES29LV160D 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160DT ES29LV160DB 48-pin 48-ball ES29LV160D es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC

    ES29LV400EB-70TGI

    Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
    Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		PDF ES29LV400E 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400ET ES29LV400EB 48-pin ES29LV400EB-70TGI ES29LV400EB-70TG ES29LV400E BB 555

    MT48LC2M32B2-5

    Abstract: timing analysis example MSC8122 MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400
    Text: Freescale Semiconductor Application Note AN3014 Rev. 1, 8/2007 AC Timing Analysis Between SDRAM and the StarCore -Based MSC8122 DSP By Boaz Kfir This application note and the associated Excel spreadsheet assist in the analysis of AC timing for the interface between an


    Original     		PDF AN3014 MSC8122 MSC8122 AN3014SW) MT48LC2M32B2-5 timing analysis example MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400

    ES29LV160EB-70TGI

    Abstract: es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC
    Text: EE SS II Excel Semiconductor inc. ES29LV160E 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		PDF ES29LV160E 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160ET ES29LV160EB 48-pin 48-ball ES29LV160EB-70TGI es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC

    ES29LV320EB-70TG

    Abstract: es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI
    Text: EE SS II Excel Semiconductor inc. ES29LV320E 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V ~ 3.6V for read, program and erase operations


    Original     		PDF ES29LV320E 32Mbit 125oC 64Kbyte 256byte ES29LV320ET ES29LV320EB ES29LV320EB-70TG es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI

    AN2904

    Abstract: MSC8122RM K98M MSC8122 SC140 MSC8122UG
    Text: Freescale Semiconductor Application Note AN2904 Rev. 0, 11/2004 Clock Mode Selection for MSC8122 Mask Set K98M By Donald Simon and Wes Ray This application note describes the MSC8122 clock modes for mask set K98M. It also describes a Microsoft Excel application that assists users in determining the internal/external


    Original     		PDF AN2904 MSC8122 MSC8122 0K98M 1K98M AN2904 MSC8122RM K98M SC140 MSC8122UG

    Untitled

    Abstract: No abstract text available
    Text: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit


    Original     		PDF 1N5913B 1N5940B 200mA 1-Jul-2004

    DIODE 920B

    Abstract: diode 918b 931b diode DIODE 926B 932B diode diode 913b
    Text: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMA5913B SMA5940B 1-Jan-2006 DO-214AC DIODE 920B diode 918b 931b diode DIODE 926B 932B diode diode 913b

    DIODE 920B

    Abstract: No abstract text available
    Text: SMB5913B~SMB5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMB5913B SMB5940B 1-Jan-2006 DO-214AA DIODE 920B

    Untitled

    Abstract: No abstract text available
    Text: SMB5913B~SMB5942B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMB5913B SMB5942B 1-Apr-2006 DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMA5913B SMA5940B 1-Jul-2004 DO-214AC

    Untitled

    Abstract: No abstract text available
    Text: SMB5913B3~SMB5942B3 Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMB5913B3 SMB5942B3 1-Apr-2006 DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: BZX84C Series Zener diode Features 1. High reliability 2. Wide voltage range available 3. Low reverse current level 4. Small outline package for space savings 5. Surface mount package Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF BZX84C 1-Jan-2006 OT-23

    4730A diode

    Abstract: 4737a+zener
    Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMA4728A SMA4764A 1-Apr-2006 DO-214AC 4730A diode 4737a+zener

    12 volt dc to 220 volt ac inverter 1000 watts

    Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
    Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.


    OCR Scan     		PDF AR181/D 12 volt dc to 220 volt ac inverter 1000 watts 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit

    Untitled

    Abstract: No abstract text available
    Text: ” Semiconductor, Inc. TC500EV EVALUATION SYSTEM FOR TC5XX A/D CONVERTERS FEATURES GENERAL DESCRIPTION • TC500EV is an evaluation and development system for TelCom's TC5xx family of dual slope integrating converters.


    OCR Scan     		PDF TC500EV TC500, TC510, TC514 TC520A RS232 TC520A) TC7660 500EV