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    EXCELICS EPA025A Search Results

    EXCELICS EPA025A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F56604ADFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604AGFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604BDFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604BGFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604CDFN#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation

    EXCELICS EPA025A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EPA025A70

    Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
    Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB


    Original     		RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A PDF

    EPA025A

    Abstract: Excelics EPA025A
    Text: Excelics EPA025A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • •  +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE


    Original     		EPA025A 12GHz 8V710 Rn/50 EPA025A Excelics EPA025A PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C PDF

    EPA025A-70

    Abstract: 0466 1.5 micron
    Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz


    Original     		EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron PDF

    EPA025A

    Abstract: 421-5 MAG EPA025 Excelics EPA025A
    Text: EPA025A High Efficiency Heterojunction Power FET • • • • • • 420 +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA025A 12GHz EPA025A 421-5 MAG EPA025 Excelics EPA025A PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A PDF