brake failure indicator
Abstract: pin DIAGRAM OF EX-NOR gate exnor pin DIAGRAM OF 3 input EX-NOR gate DIN 50016 exnor gaTE 1N4004 ED45 ic Exnor ic for ex-nor gate
Text: USIC Design Note Lamp Failure Detector User Specific Integrated Circuits Features Description • High Voltage BICMOS Technology • Independant Brake Lamp Failure Detection • Independent Direction Indicator Lamp Failure Detection with Input Filter • Up to 15 Additional Lamp
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130mA
0157c
brake failure indicator
pin DIAGRAM OF EX-NOR gate
exnor
pin DIAGRAM OF 3 input EX-NOR gate
DIN 50016
exnor gaTE
1N4004
ED45
ic Exnor
ic for ex-nor gate
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ex-nor
Abstract: exnor
Text: MECL POSITIVE AND NEGATIVE LOGIC INTRODUCTION with negative logic using the NAND. Which is the more convenient? On the one hand the designer is familiar with positive logic levels and definitions, and on the other hand, he is familiar with implementing systems using NAND
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long range gold detector circuit diagram
Abstract: CD2545 gold metal detectors divider gold detectors circuit metal detector plans GHDD4411 GHDD4414 KGL4201 KGL4202
Text: DATA SHEET O K I G a A s P R O D U C T S 10-Gbps GaAs Family High-Speed Optical Communications System April 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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10-Gbps
10-GHz
KGL4201
KGL4202
GHDD4411enue
1-800-OKI-6388
long range gold detector circuit diagram
CD2545
gold metal detectors
divider
gold detectors circuit
metal detector plans
GHDD4411
GHDD4414
KGL4201
KGL4202
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2901s
Abstract: 8 BIT ALU design by cmos 4 bit ALU USING VLSI 8 BIT ALU by 74181 alu 74181 functional diagram of ALU IDT49C402A register file 16 BIT ALU design with 74181
Text: TECHNICAL NOTE TN–03 USING THE IDT49C402A ALU Integrated Device Technology, Inc. by Michael J. Miller The MICROSLICE family consists of high-performance VLSI building blocks that provide such functions as ALUs, sequencers for building complex finite state machines, register files and support devices. The IDT49C402A is a member
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IDT49C402A
16-bit
20MHz
2901s.
32-Bits
IDT74FCT374A
2901s
8 BIT ALU design by cmos
4 bit ALU USING VLSI
8 BIT ALU by 74181
alu 74181
functional diagram of ALU
register file
16 BIT ALU design with
74181
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AO4L
Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Text: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells
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MTC-35000
102ps
216ps
AO4L
ld3p
AO15A
AO16A
FD3S
AO15AN
AO23L
BT8C datasheet
MTC-35400
mux2*1
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74hc7266
Abstract: No abstract text available
Text: [ /Title CD74H C7266 /Subject (High Speed CMOS Logic Quad 2Input EXCLUSIVE CD54/74HC7266 Data sheet acquired from Harris Semiconductor SCHS219A High Speed CMOS Logic Quad 2-Input EXCLUSIVE NOR Gate August 1997 - Revised May 2000 Features Description • Four Independent EXCLUSIVE NOR Gates
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CD54/74HC7266
SCHS219A
HC7266
TTL226.
LS1996)
SDYA012
SN54/74HCT
SCLA011
SCLA008
74hc7266
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vhc165
Abstract: TTL nand VHC16245 vhc08 toshiba 74VHC540 16 bit counter with latch VHC4020 VHC16244 VHCT237 "J-K Flip flop"
Text: HC Portfolio Comparison PART # VHC00 VHCT00 VHC01 VHC02 VHCT02 VHC03 VHCT03 VHC04 VHCT04 VHCU04 VHC05 VHCT05 VHC07 VHC08 VHCT08 VHC09 VHC10 VHCT10 VHC11 VHCT11 VHC14 VHCT14 VHC20 VHCT20 VHC21 VHCT21 VHC27 VHCT27 VHC30 VHCT30 VHC32 VHCT32 VHC42 VHCT42 VHC50
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VHC00
VHCT00
VHC01
VHC02
VHCT02
VHC03
VHCT03
VHC04
VHCT04
VHCU04
vhc165
TTL nand
VHC16245
vhc08 toshiba
74VHC540
16 bit counter with latch
VHC4020
VHC16244
VHCT237
"J-K Flip flop"
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pin DIAGRAM OF 3 input EX-NOR gate
Abstract: No abstract text available
Text: O K I electronic components KGL6030_ Ultra high-speed logic 1C Exclusive EXOR/EXNOR gate GENERAL DESCRIPTION The KGL6000 family are the ultra high-speed GaAs devices. W ith our unique M CFF memory cell type flip-flop technology, ultra high-speed operation of 5 GHz or more has been realized.
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KGL6030_
KGL6000
pin DIAGRAM OF 3 input EX-NOR gate
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2 input ex-or gate 14 pin ic
Abstract: ex-nor ic for ex-nor gate MC10107 exnor
Text: MOTOROLA TRIPLE 2-INPUT EXCLUSIVE "OR'VEXCLUSIVE "NOR" TRIPLE 2-INPUT EXCLUSIVE "OR'VEXCLUSIVE "N O R " The M C 1 0 1 0 7 is a triple-2 input exclusive O R /N O R gate. Pq tpd = 40 m W typ/gate No load = 2.8 ns typ L SUFFIX C E R A M IC P A C KA G E C A S E 620
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MC10107
MC10107
2 input ex-or gate 14 pin ic
ex-nor
ic for ex-nor gate
exnor
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pin DIAGRAM OF 3 input EX-NOR gate
Abstract: pin DIAGRAM OF EX-NOR gate ex-nor
Text: MOTOROLA TRIPLE 2-INPUT EXCLUSIVE "OR'TEXCLUSIVE "NOR" TRIPLE 2-INPUT EXCLUSIVE "OR'VEXCLUSIVE "NOR" The M C I 01 07 is a triple-2 input exclusive OR/N O R gate. P[j = 4 0 mW typ/gate No Load tpd = 2.8 ns typ tr, tf = 2.5 ns typ (20%-80%) L SUFFIX CERAMIC PACKAGE
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ex-nor
Abstract: No abstract text available
Text: CMOS Standard cell CMOS Standard cel/ S2PCS Series •S2PCS Seríes Parameter Contents Technology Silicon gate CM OS I / O level TTL. CM OS. Schmitt Delay time Internal gate 2ns Typ Input mode T TL CM OS, Pull-up/pull-dow n resistor (5 K O , 10 K O , 50KÍ1) , schmitt trigger
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10L-0
ex-nor
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ex-nor
Abstract: EXNOR TTL
Text: CMOS Standard cell CMOS Standard c e ll/ S2PCS Series •S 2P C S Series Parameter Contents Technology Silicon gate CMOS I/O level TTL. CMOS. Schmitt Delay time Internal gate 2ns Typ Input mode TTL CMOS, P ull-u p /p ull-do w n resistor (5KÍ2,10KO, 50K O ) , schmitt trigger
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10L-0
ex-nor
EXNOR TTL
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3051
Abstract: No abstract text available
Text: MTC-3051 Lamp Failure Detector D ata Sheet Advance Information Application Specific Standard Products Features Description • H ig h V o lta g e B IM O S T e c h n o lo g y • In d e p e n d a n t B ra k e Lam p F a ilu re D etection • In d e p e n d a n t D ire ctio n
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MTC-3051
MTC-3051
3051
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BU1215
Abstract: BU1216 bu1210 d 1548 BU1200 BU1201 BU1202 BU1203 BU1205 BU1212
Text: CMOS Gate array . ¿ S S S CMOS Gate array/B U 1200 Series •BU1200 Series BU1200 Series Parameter Integration number No. of gates 2 inputs gale conversion BU1205 BU1206 BU1201 BU1202 BU1203 BU1204 156 288 460 793 1548 3025 72 100 70 98 No. of bondings
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array/BU1200
BU1200
G0G73G7
BU1205
BU1201
BU1202
BU1203
50MHz
BU1210
BU1215
BU1216
d 1548
BU1212
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inverter /S69 2LF
Abstract: BU12005 BU12000 BU12002 BU12006 BU12007 BU12011 BU12012 BUI2001 BUI2003
Text: CMOS Gate array CM OS Gate array/BU12000 Series • B U 12000 Series BU 12000 Series Parameter No. of gates 2 inputs NAND gate conversion Integrated counts BUI2001 BU12002 BUI2003 BUI2004 BU12005 BU12006 BU12007 2300 3960 6068 8256 14616 21560 31620 38 50
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array/BU12000
BU12000
BUI2001
BU12002
BUI2003
BUI2004
BU12005
BU12006
BU12007
250MHz
inverter /S69 2LF
BU12007
BU12011
BU12012
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Untitled
Abstract: No abstract text available
Text: OKI GaAs Device ULTRA HIGH SPEED LOGIC FAMILY ¡ 5 ~ Gbps Data Rate KGL 6020/6030/6040/6050/6060 |5 GHz ^ u kency Preliminary DESCRIPTION The KGL 6000 family consists of ultra-high speed logic devices. The DCFL gate using the highly advanced GaAs MES-FET and OKI’s original new development, the MCFF (Memory Cell type Flip Flop) have realized
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pin DIAGRAM OF 3 input EX-NOR gate
Abstract: pin DIAGRAM OF EX-NOR gate gold metal detectors 35d56 exnor gaTE GaAs FET HEMT Chips GHDD4411 GHDD4414 KGL4201 KGL4202
Text: Oki Semiconductor 10-GHz GaAs Family High-Speed Optical Communications Systems INTRODUCTION Oki's 10-GHz logic devices are manufactured using a 0.2-jj.m, ion-implanted process, which is similar to Oki's familiar 0.5-jj.m telecommunications process. However, the 0.2-jj.m process uses a phase-shifting
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10-GHz
GHDD4414
pin DIAGRAM OF 3 input EX-NOR gate
pin DIAGRAM OF EX-NOR gate
gold metal detectors
35d56
exnor gaTE
GaAs FET HEMT Chips
GHDD4411
KGL4201
KGL4202
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7000-SERIES
Abstract: NCM70013Z NCM70015Z NCM Corporation
Text: ncm # corporation FEATURES • High Speed Iso-planar Silicon Gate Technology • Metal Mask Programmable • 3-12 Volts Power Supply Range • TTL/CMOS/LTTL/STTL and LSTTL I/O C om patibility • All Pads Configured as Either Inputs, Outputs, l/O’s or Supplies
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7000-SERIES
70013Z
NCM70013Z
NCM70015Z
NCM Corporation
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NCM70013Z
Abstract: NCM70015Z NCM Corporation
Text: ncm corporation FEATURES • High Speed Iso-planar Silicon Gate Technology • Metal Mask Programmable • 3-12 Volts Power Supply Range • TTL/CMOS/LTTL/STTL and LSTTL I/O C om patibility • All Pads Configured as Either Inputs, Outputs, l/O’s or Supplies
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7000-SERIES
70013Z
NCM70013Z
NCM70015Z
NCM Corporation
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PLESSEY CLA
Abstract: full adder circuit using nor gates Plessey PLESSEY CLA2000 CLA21XX CLA2000 SERIES plessey semi-custom
Text: PLESSEY SEMICONDUCTORS tS 7220513 PLESSEY SEMICONDUCTORS A PLESSEY w ' Semiconductors. Ï Ë| 7SH0S13 DODSSMfl 7 65C 05548 D /P ^ T-42-11-09 _CLA2000 series MICROGATE-C 1 CLA2000 SERIES Microgate-C is a semi-custom design technique for the production of gate arrays on Plessey Semiconductors high
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7SH0S13
T-42-11-09
CLA2000
PLESSEY CLA
full adder circuit using nor gates
Plessey
PLESSEY CLA2000
CLA21XX
CLA2000 SERIES
plessey semi-custom
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by MCA2200ECL/D M O TO RO LA MCA2200ECL 1 SEMICONDUCTOR TECHNICAL DATA MCA2200ECL MACROCELL ARRAY The MCA2200ECL Array is a m em ber of M otorola's "T h ird G eneration” MCA3 ECL series. M otorola's MOSAIC III process provides the MCA2200ECL w ith the logic pow er of over 2200
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MCA2200ECL/D
MCA2200ECL
MCA2200ECL
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LAH3
Abstract: No abstract text available
Text: P jjp i G E C P L E S S E Y SE MI C ON DU CT ORS DS3596-2.4 MA9000A Sea of Gates RADIATION HARD ADVANCED GATE ARRAY DESIGN SYSTEM The logic building block is a cell-unit, equivalent ¡n size to a two input NAND gate. Back-to-back cell units form the core of
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DS3596-2
MA9000A
37bfl522
MA9000A
002H24T
LAH3
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Untitled
Abstract: No abstract text available
Text: — High-Reliability ASICs PA40000 Series These data sheets are provided fo r technical guidance only. The final device performance may vary depending upon the final device design and configuration. CMOS Automated Gate Arrays PA40000 Series Features: • Low-pow er silicon-gate CMOS technology
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PA40000
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
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DS3598-3
MA9000
D0242bl
3Sx24nnnxxxxx
37bflS22
00242b2
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