IT8510E
Abstract: RTL8201CL IT8510 EXPORT U22 SiS 963
Text: Chapter2 Major Components UNIWILL COMPUTER SIP CO., LTD Export Processing Zone, No. 200, Central SuHong Road, SuZhou Industrial Park, JiangSu, P.R. China TEL: 86-512-62580801 FAX: 86-512-62588804 URL: http:// www.uniwill.com.tw/ 255KI5 Rev : A Page 1 - 37
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255KI5
IT8510E
RTL8201CL
IT8510
EXPORT U22
SiS 963
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P71EN0
Abstract: VTT18 AA27 op Component z1508 QT4532KL080HC Z2301 IT8510 SAMA5 SADQ42 U16H
Text: Chapter2 Major Components UNIWILL COMPUTER SIP CO., LTD Export Processing Zone, No. 200, Central SuHong Road, SuZhou Industrial Park, JiangSu, P.R. China TEL: 86-512-62580801 FAX: 86-512-62588804 URL: http:// www.uniwill.com.tw/ P71EN0 Rev : A Page 1 - 40
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P71EN0
QT4532KL080HC
BAT54
Z3418
Z3419
Z3420
P71EN0
VTT18
AA27 op Component
z1508
Z2301
IT8510
SAMA5
SADQ42
U16H
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act4485
Abstract: No abstract text available
Text: Standard Products ACT4485 Dual RS485 Interface Transceiver Radiation Hardened Preliminary www.aeroflex.com/Avionics December 5, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation performance - Total dose ≥100 krads Si Designed for RS485 Interface Applications
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ACT4485
RS485
MIL-PRF-38534
Cla-9229
SCD4485
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Mini-Mold
Abstract: No abstract text available
Text: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）
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IF10mA)
SML211
590nm
611nm
630nm
SML-211YT
SML-211DT
SML-211UT
Mini-Mold
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AK9813BF
Abstract: No abstract text available
Text: Package Outline 24pin VSOP Unit: mm +0.20 1.25 −0.10 1.15 A *5.6 1 7.6±0.2 13 24 12 0.2 +0.03 0.17 −0.10 0.65 0.08 M Detail A 0.1 0.5±0.2 *7.8±0.1 0.08 NOTE: Dimension “*” does not include mold flash. ・Device DAC+EEPROM ：AK9813BF 0~10°
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24pin
AK9813BF
AK9813BF
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block diagram of energy saving system
Abstract: block diagram of energy saving AK93C12A DSA0013246
Text: ASAHI KASEI [AK93C12A] AK93C12A 128Kbit Serial CMOS EEPROM Features ADVANCED CMOS EEPROM TECHNOLOGY Preliminary LOW VCC OPERATION … Vcc = 1.8V ~ 5.5V 131072 bits, 8192Õ16 organization SERIAL INTERFACE - Interfaces with popular microcontrollers and standard microprocessors
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AK93C12A]
AK93C12A
128Kbit
DAM03E-00
block diagram of energy saving system
block diagram of energy saving
AK93C12A
DSA0013246
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Untitled
Abstract: No abstract text available
Text: SIP5 LSI Assembly Units : mm • SIP5 2.4±0.2 1.2 4.9±0.2 3.5±0.5 9.6±0.5 11.8±0.2 5 1 2.54 0.6 0.6 0.8 1.3 ∗ The contents described herein are subject to change without notice. 0.3±0.1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any
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SSOP-A16
Abstract: No abstract text available
Text: SSOP-A16 LSI Assembly Units : mm • SSOP-A16 9 1 8 1.5±0.1 4.4±0.2 0.11 6.2±0.3 16 0.8 0.3Min. 6.6±0.2 0.15±0.1 0.1 0.36±0.1 ∗ The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any
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SSOP-A16
SSOP-A16
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SQFP-T80C
Abstract: No abstract text available
Text: SQFP-T80C LSI Assembly Units : mm • SQFP-T80C 16.0±0.3 14.0±0.2 61 40 80 21 1 20 0.125±0.1 0.1±0.1 1.4±0.1 41 0.5 14.0±0.2 16.0±0.3 60 0.65 0.3±0.1 ∗ The contents described herein are subject to change without notice. 0.1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any
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SQFP-T80C
SQFP-T80C
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Untitled
Abstract: No abstract text available
Text: IrDA Modules Photo Link Modules zProduct Designation R P M ∗∗ ∗∗ − ∗∗ ∗∗ Packaging Specification E2A/E3A Embossed tape 1pin, sproket hool side, Side view type E4A Embossed tape (1pin, sproket hool side, Top view type) Shield case The main classifications
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Untitled
Abstract: No abstract text available
Text: MSOP8 LSI Assembly Units : mm • MSOP8 5 1 4 0.29±0.15 0.6±0.2 8 2.8±0.1 4.0±0.2 2.9±0.1 +0.05 0.145−0.03 0.9Max. 0.75±0.05 0.08±0.05 0.475 0.22+0.05 −0.04 0.65 0.08 S ∗ The contents described herein are subject to change without notice.
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Untitled
Abstract: No abstract text available
Text: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1305DG 3648-elements, embedded electronic shutter function, for barcode scanner. The TCD1305DG is a high sensitive and low dark current 3648−elements linear image sensor. The sensor can be used
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TCD1305DG
3648-elements,
TCD1305DG
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DIP18
Abstract: No abstract text available
Text: DIP18 LSI Assembly Units : mm • DIP18 22.9±0.3 10 1 9 0.51Min. 3.95±0.3 6.5±0.3 18 7.62 3.29±0.2 0.3±0.1 2.54 0.5±0.1 ∗ The contents described herein are subject to change without notice. 0° ~ 15° Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any
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DIP18
51Min.
DIP18
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TCD1304
Abstract: TCD1304DG
Text: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1304DG 3648-elements, embedded electronic shutter function, for barcode scanner. The TCD1304DG is a high sensitive and low dark current 3648−elements linear image sensor. The sensor can be used
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TCD1304DG
3648-elements,
TCD1304DG
TCD1304
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verilog code for 128 bit AES encryption
Abstract: verilog code for 32 bit AES encryption verilog code for aes encryption vhdl code for aes decryption vhdl code for cbc vhdl code for AES algorithm TSMC 90nm FIPS-197 SP800-38A verilog code for AES algorithm
Text: AES-P Programmable AES Encrypt/Decrypt Core Conforms to the Advanced Encryption Standard AES standard (FIPS PUB 197) Single module efficiently integrates multiple AES functions and modes Run-time programmable for: − Encryption or Decryption − Cipher Key length:
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256-bits
FIPS-197
128-bit,
192-bit
256-bit
verilog code for 128 bit AES encryption
verilog code for 32 bit AES encryption
verilog code for aes encryption
vhdl code for aes decryption
vhdl code for cbc
vhdl code for AES algorithm
TSMC 90nm
SP800-38A
verilog code for AES algorithm
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Untitled
Abstract: No abstract text available
Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120 to 400
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HN1A01F
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Untitled
Abstract: No abstract text available
Text: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
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2SA1873
2SC4944
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Untitled
Abstract: No abstract text available
Text: DF3A6.8FV TOSHIBA Diodes for Protecting against ESD DF3A6.8FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range
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Untitled
Abstract: No abstract text available
Text: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
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2SC3326
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Abstract: No abstract text available
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
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2SA1163
2SC2713
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Untitled
Abstract: No abstract text available
Text: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832 Audio Frequency General Purpose Amplifier Applications • • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
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2SA1832
2SC4738
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Untitled
Abstract: No abstract text available
Text: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range Note: Using continuously under heavy loads e.g. the application of high
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JDH3D01FV
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Untitled
Abstract: No abstract text available
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
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2SA1162
2SC2712
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Untitled
Abstract: No abstract text available
Text: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD DF3A6.2FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range
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