OM100L60CMIS
Abstract: OM75L60CMIB OM75L60CMIS
Text: Patent Pending OM100L60CMIS, OM75L60CMIS, OM75L60CMIB CERMOD HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT’S 75 & 100 A, 600V Three Phase Bridge Configuration in Ceramic to Metal Sealed Modules FEATURES • • • • • • • Rugged, Lightweight Hermetic Ceramic Package
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OM100L60CMIS,
OM75L60CMIS,
OM75L60CMIB
13Vge
15Vge
11Vge
OM100L60CMIS
OM75L60CMIB
OM75L60CMIS
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3PHA 20
Abstract: 3pha diode 3PHA IPHX36021 MHPM7B15A60A cms IGBT application
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MHPM7B15A60WD DATA — Hybrid Power Modu[e Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output invetier and brake transistor/diode in a single convenient package. The output
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MHPM7B15A60WD
2W609
OW521
IPHX36021+
MHPM7B15A60ND
3PHA 20
3pha diode
3PHA
IPHX36021
MHPM7B15A60A
cms IGBT application
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MIG20J
Abstract: No abstract text available
Text: TOSHIBA MIG20J906H TOSHIBA INTEGRATED 1GBT MODULE SILICONE N CHANNEL 1GBT MIG20J906H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package ● Output Inverter Stage :
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MIG20J906H
0A/600V
0A/800V
961001EAAT
B25/85
MIG20J
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STK 1000 watt power amp circuit diagram
Abstract: STK 439 Stereo amplifier STK 025 power amplifier STK 441 Stereo amplifier 1000 watt RMS professional audio power amplifier schematic Circuit stk 025 audio amplifier ic audio power amp stk 025 AD8015 Circuits STK power amplifier Dc 12v transistor stk 630 replacement
Text: NEW PR O D U CT APPLICATIONS - 1995 +5V n : 100Q v out “ I v .n I -5 V FULL-WAVE RECTIFIER + 2.5V +5V A | I A REF REF IN - IN(+) A V dd D V dd A • AIN1 (+) A D 7714 • AIN1 (-) I L \ AGND • DGND • i ANALOG DEVICES DATA CONNECTOR 3V jitC A D SP-2103
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SP-2103
AD8300
12-BIT
44-Pin
AD2S99
STK 1000 watt power amp circuit diagram
STK 439 Stereo amplifier
STK 025 power amplifier
STK 441 Stereo amplifier
1000 watt RMS professional audio power amplifier schematic Circuit
stk 025 audio amplifier
ic audio power amp stk 025
AD8015 Circuits
STK power amplifier Dc 12v
transistor stk 630 replacement
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Untitled
Abstract: No abstract text available
Text: Bulletin 127502 08/97 International IS R Rectifier m t . .KB THREE PHASE BRIDGE SERIES Power Modules Features • 130 A 160 A Package fully compatible with the Industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case
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E78996
DG30325
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Untitled
Abstract: No abstract text available
Text: Bulletin 12086/A International M Rectifier SD1500C.L SERIES STANDARD RECOVERY DIODES Hockey Puk Version Features 1600A • W id e cu rrent range ■ H igh vo ltag e ratin gs up to 3 0 0 0 V ■ H igh su rg e cu rrent ca p a b ilitie s ■ D iffu sed junction
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12086/A
SD1500C.
DO-200AB
D-147
45SS4S5
4A5S452
D-148
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Untitled
Abstract: No abstract text available
Text: lO t4ÔS545S OOlGfllM IN T E R N A T IO N A L R E C T IF IE R R 1 64 R34B SERI ES 3000-2400 VOLTS RANGE 820 AMP AVG HO CK EY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUHGER INTERNATIONAL VflRH. V„ - VI Hax. rap . paak ravaraa and d t r a c t voltaga
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S545S
3483Q
R34B30A
5S452
200AB
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K1530
Abstract: VSK1540 VSK1530 VSK1520
Text: MICRO OUALITY / 15 Amp Schottky Rectifiers S E M IC O N D U C T O R , IN C . 150°C MAX Tj 20 Volt, 30 Volt and 40 Volt VRRM .600 Volt VF AT lF = 15.0 Amps Very Fast Switching Speed Standard DO 203AA Formerly DO-4 Case JED EC P ackage LTR. INCHE S M ILL IM E T E R S
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203AA
K1530
VSK1540
VSK1530
VSK1520
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.884 INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7054 IRHN8054 N-CHANNEL MEGA RAD HARD s 60 Volt, 0.0250, MEGA RAD HARD HEXFET Product Summary International Rectifier’s M EG A R AD H A R D Technology HEXFETs
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IRHN7054
IRHN8054
1x106
1x1012
20QA/pS,
S54SB
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC M0-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted M O S F E T And Rectifier In One Package
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OM9007SC
OM9008SC
OM9009SC
OM9010SC
M0-078
OM9007SC
DDD115S
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HFA16TB60
Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Text: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)
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AN-993
HFA16TB60
HFA20TB120
FA08TB60
hfa16tb60c
HFA15TB60
Telex-95219
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Untitled
Abstract: No abstract text available
Text: -INTERNATIONAL RECTIFI ER IOR D5 DE INTERNATIONAL RECTIFIER f I 4055455 □□D774T L m u iiiL ^ e B e s^ œ B E ^ ^ 7-'- 3. ¿T- P # Data Sheet No. PD-3.094 S30E & S30EH S E R IE S 800-200 VOLTS RANGE 1220 AMP RMS, RING AM PLIFYING GATE PHASE CO N TRO L T Y P E H O C K EY PUK S C R s
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D774T
S30EH
G30E8A
S30EH8A
S30EH6A
630E4B
S30EH4B
B30E2B
S30EH2B
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452 thyristor
Abstract: IRK E78996
Text: Bulletin 127132 rev. D 09/97 International IS R Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ ■ 3500 VRUS isolating voltage Standard JE D EC package
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E78996
20ohmsf
40ohms
452 thyristor
IRK E78996
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v105
Abstract: 16S90 tsr 002
Text: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience
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ULE78996
27K/W
IRKU/V105
20ohrro
v105
16S90
tsr 002
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1B50
Abstract: THC-1500 lrk9 20as15
Text: Bulletin 127132 rev. D 09/97 International ISR Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ 3500 VRMS isolating voltage ■ Standard JED EC package
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H188
Abstract: No abstract text available
Text: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs
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IRHM7054
IRHM8054
1x106
1x105
MIL-STD-750,
H-190
H188
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Untitled
Abstract: No abstract text available
Text: IÇ2R I N T E RÌDATI O N A L R E C T I F I E R • 4055452 0010T31 5 ■ T 1Ö/''Ä3 R77R SERIES 34 0 0 -2 80 0 VOLTS RANGE 3740 AMP AV6 H O CK EY PUK D I F F U S E D JU NC TI ON R E C T I F I E R D I OD ES VOLTAGE RA TI NG S i PART NUMBER j J » Vr r h . V r -
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0010T31
R77R34A
R77R32A
R77R308
R77R26NT
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P channel 600v 20a IGBT
Abstract: mig20j
Text: TOSHIBA MIG20J906H TOSHIBA INTEGRATED 1GBT MODULE SILICONE N CHANNEL 1GBT MIG20J906H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package • Output Inverter Stage :
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MIG20J906H
0A/600V
0A/800V
B25/85
P channel 600v 20a IGBT
mig20j
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452 s90
Abstract: HALL 95A irkt92 IRK 92 DEVICE CODE N
Text: Bulletin 127132 rev. D 09/97 International IS R Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ ■ 3500 VRUS isolating voltage Standard JE D EC package
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ULE78996
452 s90
HALL 95A
irkt92
IRK 92
DEVICE CODE N
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ifr220
Abstract: No abstract text available
Text: IRFR220, IR FU220 Semiconductor July 1999 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR220,
FU220
IRFU220
ifr220
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BU 103t transistor
Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Text: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote
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LM134/LM234/LM334
134/LM
234/LM
BU 103t transistor
IC LM234
134H-6
diode cross reference 1N457
lm3341
lm 234 diode
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Untitled
Abstract: No abstract text available
Text: M X -CDM, INC. MiXed Signal ICs DATA BULLETIN MX469 1200 2400 4800bps MSK Modem Features Applications • Selectable Data Rates 1200/2400/4800bps • Radio and General Applications • Full-Duplex MSK • PMR/Cellular Signaling • RX and TX Bandpass Filters
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MX469
1200/2400/4800bps
008MHz
032MHz
4800bps
20-pin
MX469D3
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vacuum tube bendix
Abstract: vacuum tube bendix 6754 AN 6754 reactance tube Bendix tubes Rectifier Tubes
Text: _ File Catalog: Electron Tube Products Section: Receiving Tubes 6754 Je m / if Type TE-36 Generic Type 4 1 2 A RELIABLE HARD GLASS MINIATURE FULL-WAVE RECTIFIER DESCRIPTION ELECTRICAL RATINGS* Heater v o lt a g e * * . . Heater current .
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TE-36
vacuum tube bendix
vacuum tube bendix 6754
AN 6754
reactance tube
Bendix tubes
Rectifier Tubes
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1SS90
Abstract: No abstract text available
Text: Bulletin 127135 rev.C 09/97 International iORRectifier irk u /V 71 ,91 s e rie s THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features 75 A 95 A • Electrically Isolated: DBC b a s e p la te ■ 3 5 0 0 V RMS is o la tin g v o lta g e ■ S ta n d a rd JE D E C p a c k a g e
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irku/v71
3500VRMSisolating
E78996
40ohms
S54S5
1SS90
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