ST7-STICK
Abstract: ST7232X ST7MDT20-EVC ST72321J7 ST72321J9 ST72321R6 ST72321R7 ST72321R9 ST72324J6 ST72324K4
Text: ST7232x family A full range of compatible ROM and Flash 8-bit MCUs 8-bit core ALU Reset VPP TLI VSS VDD EVD OSC1 Program memory 8K-60KB Control RAM (384-2048B) LVD AVD Watchdog OSC OSC2 Port F PF7:0 (8 bits) The new series of ST7232x general purpose microcontrollers is ideal for applications requiring
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ST7232x
8K-60KB)
384-2048B)
10-bit
ST7MDT20-T64/DVP3
ST72321J
ST7-STICK
ST7MDT20-EVC
ST72321J7
ST72321J9
ST72321R6
ST72321R7
ST72321R9
ST72324J6
ST72324K4
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A;A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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SMPS CIRCUIT DIAGRAM 5V 20A
Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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I27124
20MT120UF
E78996)
20KHz
SMPS CIRCUIT DIAGRAM 5V 20A
400v 20A ultra fast recovery diode
20MT120UF
diode 10a 400v
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Untitled
Abstract: No abstract text available
Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
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ultrafast diode 10a 400v
Abstract: X 0238 CE
Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
ultrafast diode 10a 400v
X 0238 CE
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Untitled
Abstract: No abstract text available
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
08-Mar-07
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ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
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Untitled
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
18-Jul-08
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full bridge driver 600v
Abstract: 20MT120UFP ultrafast igbt S610A
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
18-Jul-08
full bridge driver 600v
20MT120UFP
ultrafast igbt
S610A
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20MT120UFP
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
18-Jul-08
20MT120UFP
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20MT120UF
Abstract: 20MT120UFP E78996 full bridge t
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
11-Mar-11
20MT120UF
20MT120UFP
E78996 full bridge t
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Untitled
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-20MT120UFP www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft
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VS-20MT120UFP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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20mt120ufapbf
Abstract: No abstract text available
Text: 20MT120UFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFAPbF
18-Jul-08
20mt120ufapbf
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Untitled
Abstract: No abstract text available
Text: VS-20MT120UFP www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft
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VS-20MT120UFP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DASH NO M CODE REVISIONS o CM \ 9 Z 6 0 C. PAS i 3 APR S I V t NOTES! 1.m a t e r ia l s ; B NC 20MTACTP- BEKYLUüK q o f f z k ,QQ-c-sao. LOCK WASHER-PHOSFHOÍ? BRONZE,QQ-S'750 N 5U LA70R -T£FLO N 1L -p -4 C > 3 , ALLO TH ER METAL PA R T S ' BRASS, Q Q -B -Í2 6 -
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20MTACTP-
LA70R
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
PNP transistor A705
2N1620
2sc768
2N1619
UD3008
BD264
MHT6414
SOT1156
MHT6311
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TRM401
Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USA55191/33
15On0
50MSA
USA55191/34
50MSA
2N6135
MT102
2SC118
2SC119
TRM401
BC140C
ST6512
181T2
MD14
7G13
ST7200
81T2
A298
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BD107
Abstract: BD106 m06g MT20a D7G2 SDT9903 2N2306 MT27 BLY86 m06b
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
SE7020
SFT440
SFT443A
200M5
180MS
NS9420
2N2306
2N4262
330MS
BD107
BD106
m06g
MT20a
D7G2
SDT9903
MT27
BLY86
m06b
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sharp1
Abstract: No abstract text available
Text: Hall 1C LT230A LT230A • GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type Features • Same temperature coefficient o f magnetic flux density as Outline Dimentions (Unit : Fmm) a magnet • O peration by sm all m agnet due to high se n s itiv ity
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LT230A
sharp1
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SQUARE WAVE GENERATOR
Abstract: 4 mhz oscillator Manufacturer Logos 14MT
Text: ENG INEERED COMPONENTS CO. 7 3 DE§ 33335Ö 3 DODOS f i l & | D T -5 0 -2 3 Iwprßfile o t 2l COMFATIBLE Thinny DIP T SQUARE WAVE GENERATOR MODULE j Full Military temperature range T 2 l input and output Output wavetrain can be started in sync with random events
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3333SA3
T-50-23
14-pin
-12MT
-100MT
100Mhz
C/101680
SQUARE WAVE GENERATOR
4 mhz oscillator
Manufacturer Logos
14MT
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Untitled
Abstract: No abstract text available
Text: ENG INEERED COMPONENTS CO. 7 3 DE§ 33335Ö 3 DODOS f i l & | D T -5 0 -2 3 Iwprßfile t 2l COMFATIBLE Thinny DIP T SQUARE WAVE GENERATOR MODULE j Full Military temperature range T 2 l input and output Output wavetrain can be started in sync with random events
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14-pin
100MT
100Mhz
C/101680
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N203
Abstract: No abstract text available
Text: F-199-1 samTëc P S S -0 8 -0 1 -T -S P S S -1 3 -0 1 -T -S 5,08mm .200' SP E C IFIC A T IO N S M a te s w ith : FWS. HFWS. SW Materials: Insu lator Material: Black LCP Max Processing Temp: 230°C for 60 sec. C ontact Material: Phosphor Bronze Plating: Sn over 50ji" (1,27|am) Nl
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F-199-1
03mrn)
N203
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S124
Abstract: No abstract text available
Text: m MS S E R I E S POWER INDUCTOR • F E ATUR E S % fe;^ High s a tu r a t i o n curren t S u i t a b l e for r e fl ow soldering. Wi th m a g n e t i c a l l y s h ie l d e d « s i * • SMT type APPLICATION LCD fell DC /D C 4#H # OA e q u i p m e n t Note book Co mp ut e r
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HP-4286A/HP-4263B/CH-102
CH-301
S124
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