VPA05
Abstract: 60Vpp
Text: SANYO S E MI C O N D U C T O R CORP b3E » • 0012b33 b?S «TSAJ VPM03 SAVYO F B E T H V i d « o P a o k V PM B 3 C H V 1 d « o O u t. p u t A m p L o w R o s o 1 ta t i o n C R T D l s i y b S e 1 I p i r id 1G r i e f i« a y s O v e r v 1«w Th» V P M 0 3 i s an R-G-B 3CH Video Output Ampi 1 f 1er f o r a Low -Resolution F? • G • B
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0012b33
VPM03
VPM03
VPA05
60Vpp
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TPM31
Abstract: SN74LVC574A
Text: SN74LVC574A OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS SCAS301A-JANUARY 1993 - REVISED JULY 1995 DB, DW, OR PW PACKAGE TOP VIEW • EPIC (Enhanced-Performance Implanted CMOS) Submicron Process • Typical V q l p (Output Ground Bounce)
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SN74LVC574A
SCAS301A
993-REVISED
MIL-STD-883C,
7526S
TPM31
SN74LVC574A
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VPA05
Abstract: No abstract text available
Text: SANYO SE MI C ON DU CTO R CORP t3E D • 7-i‘57D?b DBlSt SO ?SH WÊTSkJ _VPA05 F B E T H y b r i d 1O V i d e o Paole VPA S e r ies o Out:put: A m p i if ie r s for u m — R e s o l tat 1 o n C R T Dl sp>l a y s O v r v 10 w Th* V P A 0 5 Is Video Output Amplifier for a Medlum-Resolutlon Monochrom or RGB CRT Display integrates a
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VPA05
0012L52
c3707t,
VPA05
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VC401
Abstract: No abstract text available
Text: V T C IN C 9388929 D I GGDmSl S V T C INC _ D T-73'I3'03 9 D _ 9 1A 5 1 VC401 M O N O LIT H IC V O LT A G E-T O FREQUENCY CONVERTER A D V A N C E IN FO R M A TIO N FEATURES • Full Scale Frequency: 20MHz •TTL/CMOS-Compatible Open Collector Output • Internal 40pF Capacitor
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VC401
20MHz
VC401
20MHz.
20MHz
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Untitled
Abstract: No abstract text available
Text: OPA622 B U R R -B R O W N | M | AVAILABLE IN DIE Wide-Bandwidth OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LARGE SIGNAL BANDWIDTH: 150MHz AP , 200MHz (AU) (Voltage-Feedback) • HIGH OUTPUT CURRENT: +70mA • BROADCAST/HDTV EQUIPMENT • COMMUNICATIONS
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OPA622
150MHz
200MHz
200MHz/5mA
OPA622
5M-1982.
17313bS
0023Tfl0
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Untitled
Abstract: No abstract text available
Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8
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CEN-A44
CEN-A45
CEN-A45A
CEN-A44,
EN-A45
MPS-A44,
MPS-A45
100mA
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te 2221
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR i & U Y O CORP b3E ]> • 7 CH707L] 0 0 1 2 L 3 7 210 « T S A J VPM03F l G •B F o r FB E T H y b r id IC V i d « o P a c k <VPM S o i- l a s 3 O H V 1 d a o O u t. p u t A m p 1 1 f 1 r s L o w - R a a o 1 u~t i o n C R T D i s p i a y s
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CH707L]
VPM03F
7TT707L
te 2221
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Untitled
Abstract: No abstract text available
Text: Laser Diodes AIGaAs laser diodes RLD-78MV The R L D -78M V is the w o rld ’s first •E x te rn a l dimensions Unit: mm m ass-prod uced laser d io d es to be m ass pro du ced by m o lecular b eam epitaxy. Low -noise is achieved through self-p u lsation . This laser
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RLD-78MV
RLD-78MV
f-10MHz
10kHz
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