Philips tea1090
Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS
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DN-41
LO9585/WD
LO9585
LO9700
OQ8845T/K3
OQ8868HP/K6
QFP47)
X2G-BUK5R3-100B
Philips tea1090
tea1090
tea1402
pcf2705p
philips TEA1090T
SAA7321GP
TDA2579A
LMT 393 N
TDA3653bq
TEA5713
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TB230
Abstract: a/SMD resistor 805
Text: July 16, 2014 TB230 Frequency = 20-1000MHz Pout = 100W Gain = 15dB Typical Vds = 28Vdc Idq = 0.8A Efficiency = 30-50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 16, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB230
20-1000MHz
28Vdc
LB2401
484-33R6
85mil
100nF
TB230
a/SMD resistor 805
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74HC14
Abstract: TEA1533 74LS07 4368 74HCT04 74LVC245A AK4114 AK4368 AKD4368 JP13
Text: ASAHI KASEI [AKD4368-A] AKD4368-A Evaluation board Rev.1 for AK4368 GENERAL DESCRIPTION The AKD4368 is an evaluation board for 24bit DAC with built-in Headphone Amplifier, AK4368. The AKD4368 has the interface with AKM’s ADC evaluation boards. Therefore, it’s easy to evaluate the
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AKD4368-A]
AKD4368-A
AK4368
AKD4368
24bit
AK4368.
AKD4368
74HC14
TEA1533
74LS07
4368
74HCT04
74LVC245A
AK4114
AK4368
JP13
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pwm inverter drive 180 conduction
Abstract: ac motor speed control by pwm technique three phase ac control st52 not 40106 pwm sinewave INVERTER sinewave inverter PWM technique to control speed of induction MOTOR stator voltage control of 3 phase induction motor induction motor speed control by pwm technique voltage source inverter
Text: Three Phase Motors Control by using ST52 Fuzzy Logic B.U. STMicroelectronics Fuzzy Logic B.U. 29-02-00 1 Introduction Induction motors with squirred-cage are the workhorse of industry because of their low cost and rotors rugged construction. When operated directly from the line voltages, an induction
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ST52x420
ST52x430
AN1112
pwm inverter drive 180 conduction
ac motor speed control by pwm technique
three phase ac control st52
not 40106
pwm sinewave INVERTER
sinewave inverter
PWM technique to control speed of induction MOTOR
stator voltage control of 3 phase induction motor
induction motor speed control by pwm technique
voltage source inverter
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74VHC1G125
Abstract: 74VHC1G125DF Apple Authentication coprocessor pin diagram of PIC18f4550 74VHC1G14DF RS-232 to usb converter with pic18f4550 XC3S400A-4FTG256C verilog code for fixed point inverter DS28CN01 pic i2c
Text: 19-5894; Rev 0; 6/11 Secure Authentication Starter Kit The secure authentication starter kit is a highly programmable hardware/software system for development, lab testing, and demonstration of embedded applications that use Maxim’s SHA-1-based secure authentication
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DS2460,
PIC18F4550,
DS28E01/DS28CN01/DS2460
74VHC1G125
74VHC1G125DF
Apple Authentication coprocessor
pin diagram of PIC18f4550
74VHC1G14DF
RS-232 to usb converter with pic18f4550
XC3S400A-4FTG256C
verilog code for fixed point inverter
DS28CN01
pic i2c
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TB229
Abstract: amidon BN-61-202
Text: March 19, 2014 TB229 Frequency = 100-1000MHz Pout = 80W Gain = 14dB Vds = 28Vdc Idq = 0.8A Efficiency = 30 to 50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB229
100-1000MHz
28Vdc
LB2401
UT-085
16AWG
FT-82-43
UT-070C-10
100nF
UT-034
TB229
amidon BN-61-202
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TB234
Abstract: 1111X104KW500
Text: May 27, 2014 TB234 Frequency = 500-1000MHz Pout = 100W Gain = 16dB Vds = 28Vdc Idq = 0.8A Efficiency = 40% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 27, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB234
500-1000MHz
28Vdc
LB2401
200pF
85mil
70mil
100nF
TB234
1111X104KW500
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TB245
Abstract: No abstract text available
Text: M March 5, 20155 T TB245 Frequenccy=760-960MHz Pout=140W Gaain=13dB Vd ds=28Vdc Id dq=0.8A Efficciency=40% % L LB2501 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m March 5, 2015 160.0 16.0 120.0 15.0 80.0
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TB245
760-960MHz
28Vdc
LB2501
TB245
28Vdc,
1111P102JP500X
1111N200GW501X
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D882 TO-92
Abstract: b772 p D882 p D882 J D882 D882 B772 b772 D882 to 92 b772 pnp br d882
Text: WTS772 WTS882 PNP/NPN Epitaxial Planar Transistors TO-92 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)
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WTS772
WTS882
PNP/WTS772
NPN/WTS882
WTS772
WTS882
WTS77
WTS88
D882 TO-92
b772 p
D882 p
D882
J D882
D882 B772
b772
D882 to 92
b772 pnp
br d882
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B772
Abstract: D882 WTS772 WTS882 S88 marking
Text: WTS772 WTS882 PNP/NPN Epitaxial Planar Transistors * “G” Lead Pb -Free TO-92 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol
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WTS772
WTS882
PNP/WTS772
NPN/WTS882
WTS772
WTS882
WTS88
B772
D882
S88 marking
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IF-D95T
Abstract: LED fiber optic IF-C-E1000 IF-E97 IF-C-E1000 optical fiber cmos 4069 4069 not 2N3904 228087-1 transmitter and receiver circuits of optical fiber
Text: Simplex Designer’s Kit INDUSTRIAL FIBER OPTICS INTRODUCTION This fiber optic kit contains all the components needed to construct a 125 kilobit per second 10-meter data link. The distance between the transmitter and receiver can be increased by purchasing additional cable and adding it to the fiber in
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10-meter
IF-D95T
LED fiber optic
IF-C-E1000
IF-E97
IF-C-E1000 optical fiber
cmos 4069
4069 not
2N3904
228087-1
transmitter and receiver circuits of optical fiber
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Untitled
Abstract: No abstract text available
Text: Simplex Designer’s Kit Model Number: IF SD11 INDUSTRIAL FIBER OPTICS INTRODUCTION This fiber optic kit contains all the components needed to construct a 125 kilobit per second 10-meter data link. The distance between the transmitter and receiver can be increased by
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10-meter
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)
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0Q11524
OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
O-92S
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KSC3488
Abstract: KSC853 KSA953 KSC815
Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )
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OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
BCW31
O-92S
KSC3488
KSC853
KSA953
KSC815
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SOT 86 MARKING 03
Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S
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BF420S
T0126
15A3DIN
SOT 86 MARKING 03
transistor bf 422
41 BF transistor
BF420S
transistor bf 422 NPN
BH Rf transistor
BF 422
92Z MARKING CODE
SBF422
BF422S
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2sc3205
Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Text: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100
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Ta-250O
2SC3880S
OT-23
2SC3195
2SC3194
KTC9016
KTC9018
KTC2075
to-220a
KTC31I2
2sc3205
2SC3207
2SC3228
2SA1273
2SC3194
2sc3226
C4369
kta949
2sc3192
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2sc3205
Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Text: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)
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Ta-250O
2SC3880S
OT-23
2SC3195
2SC3194
KTC9016
KTC9018
O-220A
KTC31I2
10-92I
2sc3205
2SC3207
KTC2075
2SC3228
2SA1273
kta949
2SC3192
C4369
2SC3226
2Ns551
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2SC3207
Abstract: 2sc3205 KTC2075 2SC3228 2SC3226 2SC3229 2SA1273 KTC2230A Y kta949 2SC3194
Text: Electrical Characteristics T a - 2 5 0O (m W V CEO N PN F M /R F. M IX O SC PN P (T Y P ) M IN (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 MAX NF Ic (mA) V CE •e f (dB) (V) (mA) (M H z ) I 5.0 6 - 1 50 TO-92(M) F5 100 50 TO-92(C) F3
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OT-23
OT-23
rO-220AB
KTC31I2
10-92I
KTD1582
2SC3226
rO-921.
2SC4377
2SC3207
2sc3205
KTC2075
2SC3228
2SC3229
2SA1273
KTC2230A Y
kta949
2SC3194
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2SC4370A
Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)
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2SC387SS
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
2SC3198A
2SC4370A
2SC3875S
2SA1504S
2SC3227
BC548 ,BC558
bc557
2SA1504
BC337/BC327
2SC3202
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transistor marking SA p sot-23
Abstract: MARKING 14E samsung f4 14e npn
Text: SA M SUNG SEMICONDUCTOR INC MMBC1009F4 14E D _ | 7 ^ 4 1 4 2 0007240 0 j T ~ 3 / ~ /? NPN EPITAXIAL SILICON TRANSISTOR AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotlector-Emitter Voltage
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MMBC1009F4
OT-23
transistor marking SA p sot-23
MARKING 14E
samsung f4
14e npn
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2SC3875S
Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200
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Ta-25
2SC3875S
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
BC547 BC546
2Sc4370a
2SC3227
2sa1274
BC557 bc556
2sa1659a
bc557
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2Sc4370a
Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10
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2SC387SS
2SA1S04S
OT-23
2SC320I
2SA1269
O-92M
2SC3199
2SA1267
2SC3198A
2Sc4370a
2SC3227
BC548 ,BC558
BC337/BC327
2sa1270
bc546 bc556
BC547 sot package sot-23
2SC3200
2SC3202
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2sc3227
Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10
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2SC387SS
2SA1S04S
OT-23
2SC320I
2SA1269
O-92M
2SC3199
2SA1267
2SC3198A
2sc3227
2Sc4370a
BC548 ,BC558
BC337/BC327
bc557
2sc3202
2sa1270
KTC9014
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NB111
Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding
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bS0113G
NB121
100mA
400mV
to-92
fcj501130
NB021EV
NB211YY
NR001E
NB111
NB211E
LB 122 NPN
U6501
NB212E
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