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    F4319E Search Results

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    MGF4310

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .


    OCR Scan     		PDF 4310E F4319E MGF4310E MGF4314E MGF4318E GF4319E MGF4310

    MGF4314E

    Abstract: MGF4319E MGF4318E low noise x band hemt transistor MGF4310E gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd
    Text: bSLHaaT O G l T f l ? 1} S O I • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4310E Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 3 1 0E OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		PDF MGF4310E 12GHz MGF4314E: MGF4318E: MGF4319E: Unit132 DD17flflS MGF4314E MGF4319E MGF4318E low noise x band hemt transistor gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd