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    F4623 Price and Stock

    Panasonic Electronic Components ECW-F4623JL

    CAP FILM 0.062UF 5% 400VDC RAD
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    DigiKey ECW-F4623JL Bulk 59 1
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    Mouser Electronics ECW-F4623JL 392
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    Master Electronics ECW-F4623JL
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    Ozdisan Elektronik ECW-F4623JL
    • 1 $0.89424
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    Panasonic Electronic Components ECW-F4623JB

    CAP FILM 0.062UF 5% 400VDC RAD
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    Newark ECW-F4623JB Bulk 100
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    Panasonic Electronic Components ECW-F4623HB

    CAP FILM 0.062UF 3% 400VDC RAD
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    DigiKey ECW-F4623HB Bulk 200
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    Panasonic Electronic Components ECW-F4623HL

    CAP FILM 0.062UF 3% 400VDC RAD
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    DigiKey ECW-F4623HL Bulk 100
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    Mouser Electronics ECW-F4623HL
    • 1 $1.9
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    Master Electronics ECW-F4623HL
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    Ozdisan Elektronik ECW-F4623HL
    • 1 $1.07306
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    Panasonic Electronic Components ECW-F4623HLB

    CAP FILM 0.062UF 3% 400VDC RAD
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    DigiKey ECW-F4623HLB Bulk 300
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    Mouser Electronics ECW-F4623HLB
    • 1 $1.91
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    Master Electronics ECW-F4623HLB
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    Ozdisan Elektronik ECW-F4623HLB
    • 1 $1.07306
    • 10 $1.07306
    • 100 $0.9331
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    F4623 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CDMA450

    Abstract: dr600
    Text: Advanced Datasheet Ver. 03 SAW Bandpass Filter F4623 Features z RF bandpass filter for CDMA450 Rx. Part z Usable bandwidth 5MHz 460.0 MHz ~ 465.0 MHz z High attenuation z No matching single-balanced operation ( single 50Ω / balance 100Ω ) z Ceramic Surface Mounted Device Package ( 3.0 mm x 3.0mm )


    Original
    F4623 CDMA450 300mm/min DR6001-PS03 dr600 PDF

    CDMA450

    Abstract: No abstract text available
    Text: 规格书编号 SPEC NO : 产品规格书 SPECIFICATION CUSTOMER 客 户: PRODUCT 产 品: SAW FILTER MODEL NO 型 号: HD F4623 PREPARED 编 制: CHECKED 审 核: Houshihong APPROVED 批 准: CHARLES D A T E 日 期: 2007-01-25 客户确认 CUSTOMER RECEIVED:


    Original
    F4623 CDMA450 300mm/min. PDF

    F45A

    Abstract: HDVF389A1D f959 HDMVF38A2D HDBF36A1D HDF1575A f46a HDBF389A1S HDBF44A1DHDBF43A1D HDF1086A
    Text: 深圳市好达电子股份有限公司 好达电子 SAW 产品介绍 应用领域 多 媒 体 用 的 中 频 滤 波 器 模拟 电视 数字 电视 数字 广播 Silicon tuner 内载 波滤 波器 伴音 滤波 器 图像 滤波 器 带通 滤波 器 带通


    Original
    125MHz 57MHz 52MHz HDIF389A1M HDMIF389A7M HDAF389A14Dc HDVF389A1D HDMVF38A2D HDBF36A1D HDBF44A1DHDBF43A1D F45A HDVF389A1D f959 HDMVF38A2D HDBF36A1D HDF1575A f46a HDBF389A1S HDBF44A1DHDBF43A1D HDF1086A PDF

    s3030

    Abstract: f265 f8202 S5050 f3113 f3154 filter f425 F9374 F45-53 F9124
    Text: RF SAW Filters < 400 MHz 400-500 MHz Part Number 500-800 MHz 800-1000 MHz Center Frequency MHz Bandwidth F2184 > 1000 MHz Package Type (MHz) Insertion Loss (dB) 218.5 ±1.5 2.5 S5050 F2431 243.95 ±0.11 3.5 S3838 F2551 255.5 ±0.025 4 S7050 F2651 265.5 ±0.025


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    F2184 S5050 F2431 S3838 F2551 S7050 F2651 F3113 s3030 f265 f8202 S5050 f3113 f3154 filter f425 F9374 F45-53 F9124 PDF

    tle 6261 g

    Abstract: AoL-12L S-108 SEM 238 TLE TSOP CY7B144 CY7B145 B08L
    Text: 4bE D CYPRESS SEMICONDUCTOR • ESfi^bbS 00ab3SG 2 E3CYP 'T-% -Zl> -\ Z_ PRELIMINARY & CYPRESS ill — ^ s ? SEMICONDUCTOR 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-mlcron BiCMOS for high per­ formance • High-speed access


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    CY7B144 CY7B145 68-pin CY7B145 G00b403 T-46-23-12 38-00163-B tle 6261 g AoL-12L S-108 SEM 238 TLE TSOP B08L PDF

    F4823

    Abstract: F2683
    Text: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type ECWF B D e s ig n e d fo r a p p lic a tio n s w h e re h ig h c u rre n t a n d h ig h fre q u e n c y are re q u ire d • Features • L o w - lo s s • E x c e lle n t fre q u e n c y c h a ra c te ris tic s


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    250VDC 150Vrms 250Vo-p) F4823 F2683 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The


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    576-WORD MSM511001 18-pin PDF

    HM-6516-5

    Abstract: HM-6516 HM6516
    Text: HARRIS SEMICOND SECTOR ‘ÌS D E j M30ES71 DOlDYOb v T-46-23-1Z H M -6516 h a r r is 2K x 8 CMOS RAM Features Pinouts TOP VIEW • Low Power Standby. 275pW/MHz Max. • • • • • • • • • Low Power O .


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    T-46-23-1Z HM-6516 55mW/MHz 120/200ns HM-6516-5. HM-6516-9. HM-6516-8. HM-6516-5 HM6516 PDF

    MB8416-20L

    Abstract: DIP-24C-C03 mb8416 MB8416-20 PH 37M
    Text: FUJITSU MICROELECTRONICS 78 DE| 37417bB c:iO !.1rm 6 _ F U J IT S U N ICS, INC. M ICRO ELECTRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY T_46_23 MB8416-20 MB8416-20L DESCRIPTION The Fujitsu MB8416 is a 2048 word by 8-bit static random ac­ cess memory fabricated with high


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    37417bB 16384-BIT MB8416 DD033D1 T-46-23-12 MB8416-20/MB8416-20L 24-LEAD FPT-24P-M02 MB8416-20L DIP-24C-C03 MB8416-20 PH 37M PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static


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    32301m EDI8F8512C/LP/P 512Kx8 EDI8F8512C/LP/P 4096K 128Kx8 150ns T-46-23-14 PDF

    T1IS

    Abstract: GQQ0731 ragy 3530114
    Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static


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    EDI8F8512C/LP/P 512Kx8 EDI8F8512C/LP/P 4096K 128Kx8 28Kx8 G0G0734 T-46-23-14 353011M T1IS GQQ0731 ragy 3530114 PDF

    hitachi sr 302

    Abstract: No abstract text available
    Text: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x


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    HM514100JP/ZP-7-------------------- 304-Word HM51440QJP HM514100 20-pin CP-20DA) hitachi sr 302 PDF

    MB8418-20L

    Abstract: MB8417-20L TC5518 HM6117 m8s4
    Text: FUJITSU MICROELECTRONICS 7B F U JIT S U M IC R O E L E C T R O N IC S . DEI 3 m ñ l \ o B 0003335 1 |~ T-46-23-12; MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The M B8418 can be optimized for high perform ance applications


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    T-46-23-12; MB8418-20 MB8418-20L 384-BIT MB8418 B8418 374T7t 00D333Ö MB8418-20/MB8417-20L 24-LEAD MB8418-20L MB8417-20L TC5518 HM6117 m8s4 PDF

    m5m5110

    Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
    Text: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The


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    754S40 MSM511001RS/JS/ZS 576-WORD MSM511001 18-pin MSM511001-10 MSM51100P L72424D 0D041Ã m5m5110 MSM511001-12 T-46 OGD41 PDF

    25CC

    Abstract: P4C163 P4C163L
    Text: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell


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    70b2Si? P4C163/P4C163L P4C163L 28-Pln 28-Pnd -17PC -20PC -25PC -35PC 25CC P4C163 PDF

    ah rzj

    Abstract: MSM511002-10 MSM511002-12
    Text: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The


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    CI11SI MSM511002RS/JS/ZS 576-WQRD MSM511002 18-pin MSM511002-10 MSM511002-12 ah rzj MSM511002-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •


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    000177b MT42C4064 24L/400 VcqC12 MIL-STD-883 PDF

    MB81C78A-35

    Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
    Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory


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    0G1B77S MB81C78A-35/-45 64K-BIT MB81C78A T-46-23-12 MB81C78A-35 MB81C78A-45 C-28P- C28054S-1C MB81C78A-35 ICE 47E fujitsu 1988 IP-28P-M PDF

    a6t transistor

    Abstract: transistor A6t 15 ed 49
    Text: MICRON T ECH NOLOGY INC 17E D • ^11154=1 OOOlñOk 7 ■ MT5C1608 883C MILITARY SRAM 2K X 8 SRAM T - 4 t - 2 3 * l2 . AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-84036,-89690 • JA N M385I0/291 • RAD-tolerant (consult factory)


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    MT5C1608 M385I0/291 24L/300 f-46-23-12 MIL-STD-883 a6t transistor transistor A6t 15 ed 49 PDF

    Mostek 2716

    Abstract: CMOS-440
    Text: S G S-THOHSON a?» 87D 10299 T T | Dr 7 ^ 2 3 7 □ G lD H T 'i f-46-23-12 FEATURES □ Predicted worst case battery life of 11 years @ 70°C □ Data retention in the absence of power □ Data security provided by automatic write protection during power failure


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    f-46-23-12 MK48Z02/12) MK48Z03/13) CMOS-440 24-Pin MK48Z02/03 MK48Z12/13 T-46-23-12 Mostek 2716 PDF