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    MGF4951A

    Abstract: Low Noise HEMT 12g transistor
    Text: Jan./1999 [ M ITS U B IS H I S E M IC O N D U C T O R Preliminary <G aAs FET> F4951A S U P E R LO W N O IS E InGaAs H E M T Leadless Ceramic Package) DESCRIPTION Outline Drawing The M G F4951A super-low-noise HEM T (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF MGF4951A MGF4951A 12GHz mgf495ia Low Noise HEMT 12g transistor

    FET 748

    Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    OCR Scan     		PDF MGF4951A/4952A MGF495 12GHz MGF4951A MGF4952A 12GHz MGF4951A FET 748 MGF4951 MGF4952A 4952A ta 1223