IR LED and photodiode 5mm
Abstract: IR 5MM receiver infrared 5mm LED 940nm infrared receiver led 5mm IR 5MM led diode F53 diode lens photodiode phototransistor infrared 5mm receiver LED 940nm infrared 5mm LED 5mm led diode
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-131-160 REV : 1.0 PAGE : 1/8 5mm Infrared LED MODEL NO : IR1313C/F53 Features : Peak wavelength p=940nm View angle 35 High reliability High radiant intensity 2.54mm Lead spacing T-1 3/4 5mm Package
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DIR-131-160
IR1313C/F53
940nm
IR1313C/F53)
IR LED and photodiode 5mm
IR 5MM receiver
infrared 5mm LED 940nm
infrared receiver led 5mm
IR 5MM led diode
F53 diode
lens photodiode phototransistor
infrared 5mm receiver LED 940nm
infrared 5mm LED
5mm led diode
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MO-203
Abstract: SC70-5L marking F53
Text: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp® Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission
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RClamp0503F
MO-203
SC70-5L
marking F53
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marking F53
Abstract: F53 DIODE MO-203 SC70-5L
Text: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission
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RClamp0503F
marking F53
F53 DIODE
MO-203
SC70-5L
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2NU diode
Abstract: LTC4098-3.6 DIODE C06-15
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM400GA120DLC
36134B6
61FA3265
2NU diode
LTC4098-3.6
DIODE C06-15
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GA120DLC
36134B6
61FA3265
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marking F53
Abstract: No abstract text available
Text: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission
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capac05
RClamp0503F
marking F53
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLC
36134B6
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GUN DIODES
Abstract: F53 DIODE
Text: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp® Description Features Transient protection for high-speed data lines to RailClamp TVS arrays are low capacitance ESD protection devices designed to protect high speed data
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RClamp0503F
GUN DIODES
F53 DIODE
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FZ400R12KE3_B1 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2 $32 %132214DDD& F3F2 3326F4&3 ' 6*6 +,- ./01 6 2 6 . #F3BF2 3432&32F
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FZ400R12KE3
36134B6
326134B6
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FZ2400R12KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2 $%32 &132214DDD' F3F2 3%326F4'3 *6+6 , -./0 6 " 6 - #F3BF2 1432'32F%
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FZ2400R12KE3
36134B6
326134B6
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through
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BSDB-5000-1A
E124962
97fbsdb050
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f54 DIODE
Abstract: IN 5008 DIODE F53 DIODE
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through
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BSDB-5000-1A
E124962
SDB5000
SDB5010
SDB5000-SDB5006
SDB5008-SDB5010
98bbsdb50
f54 DIODE
IN 5008 DIODE
F53 DIODE
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f54 DIODE
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through
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BSDB-5000-1A
E124962
SDB5000
SDB5010
SDB5000-SDB5006
SDB5008-SDB5010
98bbsdb50
f54 DIODE
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IRF4905
Abstract: No abstract text available
Text: IRF4905S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs
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IRF4905S/L
IRF4905
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9393B
Abstract: No abstract text available
Text: SKM 200GB063D 7% V SI WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X V SI WH :H 7X V RIJ WH :H¥] Superfast NPT-IGBT Modules SKM 200GB063D 390% ZJJ G SZJ P 7%'0) V [J WH SJJ P _JJ P ` SJ G RJ d0 7%'0) V SI WH SJJ P 7%'0) V eJ WH
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200GB063D
9393B
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IRFZ44 data
Abstract: AN-994 IRFZ44 IRFZ44L IRFZ44S
Text: PD - 9.893A IRFZ44S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ44S Low-profile through-hole (IRFZ44L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.028Ω G ID = 50A S Description Third Generation HEXFETs from International Rectifier
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IRFZ44S/L
IRFZ44S)
IRFZ44L)
IRFZ44 data
AN-994
IRFZ44
IRFZ44L
IRFZ44S
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360V21
Abstract: AN-994 IRFBF20 IRFBF20L IRFBF20S "thermal via" PCB D2PAK
Text: PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D
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IRFBF20S/L
IRFBF20S)
IRFBF20L)
360V21
AN-994
IRFBF20
IRFBF20L
IRFBF20S
"thermal via" PCB D2PAK
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IRFZ46
Abstract: AN-994 IRFZ46L IRFZ46S "thermal via" PCB D2PAK
Text: PD - 9.922A IRFZ46S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ46S Low-profile through-hole (IRFZ46L) 175°C Operating Temperature Fast Switching D VDSS = 50V RDS(on) = 0.024Ω G ID = 72A S Description Third Generation HEXFETs from International Rectifier
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IRFZ46S/L
IRFZ46S)
IRFZ46L)
IRFZ46
AN-994
IRFZ46L
IRFZ46S
"thermal via" PCB D2PAK
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1RF530
Abstract: 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533
Text: ' 3469674 -û M FAIRCHILD IR f a i r c h i D E ~ 1 a M fib V M SEMICONDUCTOR ^ M A Schlumberger C om pany F 1 3 0 - 1 3 3 /IR T P 2 0 N A , 27859 F 5 3 0 - 5 3 3 0 8 /2 0 N N - C h a n n e l
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OCR Scan
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PDF
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IRF130-133/IRF530-533
MTP20N08/20N10
O-204AA
O-220AB
IRF530
IRF53RATUREâ
IRF130-133
IRF530-533
B4bclti74
1RF530
20n10
mtp20n10
IRF530
IRF130
IRF131
IRF132
IRF531
IRF532
IRF533
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Untitled
Abstract: No abstract text available
Text: WmfBtEK R7S2_ _08 Fast Recovery Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f l Q Q f j f j Q p 800 Amperes Average 2600 Volts
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BP107,
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BP107
Abstract: code f54
Text: WmfBtEK R7S2_ _08 Fast Recovery Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f l Q Q f j f j Q p 800 Amperes Average 2600 Volts
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BP107,
22/I5
BP107
code f54
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TIL100
Abstract: BP107
Text: b4E D • 7 E [ì4b51 DDOblìD 03^ H P R X R7S2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 08 Fast Recovery flç Q fjfjç p 800 Amperes Average
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OCR Scan
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BP107,
1x10-6
TIL100
BP107
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Untitled
Abstract: No abstract text available
Text: TOSHIBA C2M0S Logic TC74HC/HCT Series TC74HC251AP/AF 8-Channel Multiplexer 3-State The TC74HC251A is high speed CMOS 8-CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC/HCT
TC74HC251AP/AF
TC74HC251A
TC74HC245A
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IRF5303
Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
Text: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRF530/531/532/533
IRFP130/131/132/133
O-220
IRF5303
irf530
diode IR 132 E
FP133
IRF530-3
IR 126 D 34
FP-13
IRF532
F532
FP132
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