F5K THERMAL Search Results

F5K THERMAL Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCTH011AE		Toshiba Electronic Devices & Storage Corporation	Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type
TCTH022AE		Toshiba Electronic Devices & Storage Corporation	Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function
TCTH021AE		Toshiba Electronic Devices & Storage Corporation	Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type
TCTH012BE		Toshiba Electronic Devices & Storage Corporation	Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function
TCTH012AE		Toshiba Electronic Devices & Storage Corporation	Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function

F5K THERMAL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
F5K100J14 Abstract: F5K220J14 F5K6R8J14 F5K470J14 F5K2R2J14 E73591 f5k100 F5K4R7J14 F5K330J14 hu4x Text: RoHS対応型温度ヒューズ Thermal Cutoffs Conform with RoHS Directive 2005. 08 K-F Series D 用語説明 Explanation of Terminology • 公称動作温度 Tf Rated functioning temperature Tf E※1 安全規格で定められた動作温度。電安法 ±7℃	Original	DC350V DC700V ONOFF3030 F5K100J14 F5K220J14 F5K6R8J14 F5K470J14 F5K2R2J14 E73591 f5k100 F5K4R7J14 F5K330J14 hu4x	PDF
Untitled Abstract: No abstract text available Text: RESISTANCE e +25'C = 10,000 0 t 10% RESISTANCE/TEMPERATURE CURVE = "F " BETA 'f 0 TO +50'C = 3,419'K NOMINAL TEMPERATURE COEFFICIENT e +25'C = -3.86% /"C NOMINAL DISSIPATION CONSTANT = 2 m W /'C NOMINAL THERMAL TIME CONSTANT = 8 SECONDS NOMINAL MAXIMUM TEMPERATURE RATING = +220'C	OCR Scan		PDF
5KF40 Abstract: F5KF40 5KF30 5KF30B 5KF40B F5KF40B n120 30 Text: FAST RECOVERY DIODE 5 .5 A /3 0 0 ~ 4 0 0 V /trr:4 5 n s e c 5KF30B F5KF30B 5KF40B F5KF40B FEATURES ° Similar to T0-220AC and T0-220AB Case 0 Fully Molded Isolation Case P - Type • Ultra - Fast Recovery « Low Forward Voltage Drop Efficiency ° Low Power Loss, High	OCR Scan	A/300 00V/trr 45nsec T0-220AC T0-220AB 5KF30 5KF30 F5KF30 5KF40 F5KF40 5KF30B 5KF40B F5KF40B n120 30	PDF
Untitled Abstract: No abstract text available Text: SCHOTTKY BARRIER DIODE 5KQ90 F5KQ90 5KQ100 F5KQ100 5KQ90B F5KQ90B 5KQ100B F5KQ100B 5 .5 A /9 0 ~ 10 0 V FEA TU RES ° Similar to T0-220AC and T0-220AB Case ° Fully Molded Isolation Case F-Type ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency	OCR Scan	5KQ90 F5KQ90 5KQ100 F5KQ100 5KQ90B F5KQ90B 5KQ100B F5KQ100B T0-220AC T0-220AB	PDF
Untitled Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	OCR Scan	-400u -600u -800u REV9806027 M63001FP	PDF
8097BH Abstract: No abstract text available Text: - • im B n o B a a M A R v I in te l 809XBH/839XBH/879XBH COMMERCIAL/EXPRESS HMOS MICROCONTROLLER ■ 879XBH: an 809XBH with 8 Kbytes of On-Chip EPROM ■ 839XBH: an 809XBH With 8 Kbytes of On-Chip ROM 232 Byte Register File Register-to-Register Architecture	OCR Scan	809XBH/839XBH/879XBH 879XBH: 809XBH 839XBH: 10-Blt 16-BR 16-Bit 8097BH	PDF
JRC 45600 Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES	OCR Scan	ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541	PDF