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    F63TNR Search Results

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    F63TNR Price and Stock

    Fairchild Semiconductor Corporation F63TNR3.2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics F63TNR3.2 96,600
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    Fairchild Semiconductor Corporation F63TNR 6-1

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    Bristol Electronics F63TNR 6-1 9,940
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    Fairchild Semiconductor Corporation F63TNR-3.2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics F63TNR-3.2 9,000
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    Fairchild Semiconductor Corporation F63TNR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics F63TNR 3,000
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    F63TNR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f 948

    Abstract: TOP 948 f948
    Text: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled


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    PDF FC-36A F63TNR 330cm f 948 TOP 948 f948

    T0030

    Abstract: DO-201AD F63TNR
    Text: DO-201AD/AE Tape and Reel Data DO-201AD/AE Packaging Configuration: Figure 1.0 F63TNR or Human Readable Label DO-201AD/AE TNR Intermediate Container Options Corrugated Outer liner White Anode Red/Blue (Cathode) Kraft Paper wounded between layers 340mm x 340mm x 410mm


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    PDF DO-201AD/AE F63TNR 340mm 410mm CBVK741B019 T0030 DO-201AD

    F63TNR

    Abstract: F852 D84Z CBVK741B019 FDR835N 831N
    Text: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


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    PDF F63TNR 330cm 177cm F852 D84Z CBVK741B019 FDR835N 831N

    CBVK741B019

    Abstract: F63TNR F852 FDR835N
    Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


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    PDF F63TNR 330cm 177cm CBVK741B019 F852 FDR835N

    Untitled

    Abstract: No abstract text available
    Text: DO-41 Plastic Tape and Reel Data DO-41 (Plastic) Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label DO-41 (Plastic) TNR Intermediate Container Options Corrugated Outer liner White (Anode) Red/Blue (Cathode) Kraft Paper wounded between layers


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    PDF DO-41 F63TNR/Human 340mm F63TNR CBVK741B019 1N4741A

    2N4401_D11Z

    Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION


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    PDF F63TNR 375mm 267mm 327mm 158mm 135mm 333mm 231mm 183mm 2N4401_D11Z Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z

    d84z

    Abstract: 01246 SOT223 top 223
    Text: SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-223 330cm 177cm OT-223 d84z 01246 SOT223 top 223

    AT 30B

    Abstract: FC-30B 942b F942B
    Text: FC-30B 3.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-30B MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: FC-30B MOSFET BGA parts are shipped in tape. The carrier tape if made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film


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    PDF FC-30B F63TNR 330cm AT 30B 942b F942B

    corrugated box spec

    Abstract: T0030 CBVK741B019 Fairchild taping F63TNR F63TNR 3.2
    Text: DO-15 Tape and Reel Data DO-15 Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label Corrugated Outer liner DO-15 TNR Intermediate Container Options White Anode Red/Blue (Cathode) Kraft Paper wounded between layers F63TNR Label sample DO-15 Packaging


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    PDF DO-15 F63TNR/Human F63TNR 340mm 410mm CBVK741B019 corrugated box spec T0030 CBVK741B019 Fairchild taping F63TNR 3.2

    CBVK741B019

    Abstract: F63TNR F852 PN2222A corrugated box spec
    Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-223 F63TNR 330cm 177cm CBVK741B019 F852 PN2222A corrugated box spec

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


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    PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    Si4450DY

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    On semiconductor date Code sot-223

    Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
    Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF BCP56 OT-223 On semiconductor date Code sot-223 BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions

    CBVK741B019

    Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
    Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide


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    PDF FDS6814 CBVK741B019 F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8

    SI9955DY

    Abstract: fairchild NDS 1182
    Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si9955DY fairchild NDS 1182

    Untitled

    Abstract: No abstract text available
    Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.


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    PDF FDS3690

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


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    PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461

    Untitled

    Abstract: No abstract text available
    Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V


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    PDF FDS2670

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si4420DY

    Untitled

    Abstract: No abstract text available
    Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si9945DY

    FDR835N

    Abstract: 831N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDR6678A FDR835N 831N

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


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    PDF FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    PDF Si4412DY

    2539a

    Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
    Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate


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    PDF FDS5670 FDS5670 2539a IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL