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    F7 TRANSISTOR Search Results

    F7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMA26402 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: F7  Basic Part Number


    Original     		PDF DMA26402 UL-94 DRA2124E DMA264020R

    CIMRF7Z4011

    Abstract: No abstract text available
    Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen


    Original     		PDF Y203-EN2-01 RS485 110KW I23E-EN-01 CIMRF7Z4011

    CIMR-F7Z40151

    Abstract: No abstract text available
    Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control


    Original     		PDF Y203-EN2-02-Katalog RS485 I23E-EN-02 CIMR-F7Z40151

    7H diode

    Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
    Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO


    Original     		PDF IPA50R140CP 799EH 7H diode IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m

    DFJI

    Abstract: JG marking diode EZD transistor 7g
    Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9


    Original     		PDF IPD50R399CP /L-33J DFJI JG marking diode EZD transistor 7g

    diode EZD

    Abstract: diode AY 101
    Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0-,฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * -33  +1 `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN


    Original     		PDF IPD50R399CP 97F78 799EG: /L-33J diode EZD diode AY 101

    h7d marking

    Abstract: No abstract text available
    Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:


    Original     		PDF IPA50R140CP 97F78 799EH: h7d marking

    JG Diode

    Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
    Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9


    Original     		PDF IPD50R520CP JG Diode diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g

    diode AY 101

    Abstract: IPD50R520CP
    Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN


    Original     		PDF IPD50R520CP 97F78 799EG: 87BB7HI diode AY 101 IPD50R520CP

    Untitled

    Abstract: No abstract text available
    Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9


    Original     		PDF IPD50R399CP

    TLN103

    Abstract: TLN108 TPS605LB
    Text: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light


    OCR Scan     		PDF TPS601A TPS604 To-18 TPS614 TLN101A TLN102 TLN108 TLN201 TPS610 TPS611 TLN103 TLN108 TPS605LB

    TLP121-4

    Abstract: tlp120 smd TLP112A
    Text: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200


    OCR Scan     		PDF TLP121 TLP121-4 TLP124 TLP124-4 TLP120 TLP120-4 TLP126 TLP621 TLP621-4 TLP624 tlp120 smd TLP112A

    TLRA280

    Abstract: TLP1007A TLRC280
    Text: Photo interrupters P hoto IC O utput F7 Electro-optical Characteristics (Ta=25°C) Classification Photo IC Output Type No. Output Level (With Light) TLP1000A “H” TLP1001A “L" TLP1002A “H” TLP1003A “L” TLP1004A “H” TLP1005A “L” TLP1006A


    OCR Scan     		PDF TLP1000A TLP1001A TLP1002A TLP1003A TLP1004A TLP1005A TLP1006A TLP1007A TLP1014 TLP1015 TLRA280 TLRC280

    TLP850

    Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
    Text: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852


    OCR Scan     		PDF Ta-25 TLP507A TLP850 TLP851 TLP852 TLP853 TLP862 TLP863 TLP864 TLP865 TLP1240 TLP807 TLP809 TLP8 TLP1225 TLP1230

    DTC114WS

    Abstract: No abstract text available
    Text: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)


    OCR Scan     		PDF DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV DTC114W 114WS 114WA DTC114WS

    2SA675

    Abstract: t430 transistor t430 T591 PA33 ss-3r
    Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £


    OCR Scan     		PDF 2SA675 2SA675 t430 transistor t430 T591 PA33 ss-3r

    Untitled

    Abstract: No abstract text available
    Text: In r Com I¡near Corporation 000674 i 0 f7 ? /tC £ o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • • • • • ± 3 0 V ou tp u t drive capability • -3 d B bandw idth of 50MHz precision, high speed D to A conversion


    OCR Scan     		PDF 50MHz 500V//US CLC210AI, CLC210AM MIL-STD-883B) CLC210 60Vppfrom CLC200-1.

    RCA-CDP1873C

    Abstract: No abstract text available
    Text: C M O S Peripherals .403 Advance Information/ Preliminary Data CDP1873C TERMINAL ASSIGNMENT CMOS 1 of 8 Binary Decoder vss — "1 2 3 4 5 6 7 6 s-J 16 15 14 13 12 II 10 9 1 — — — — — — — — — — — — — — s > AO Ai A2 F7 E2 E3 OUT 7


    OCR Scan     		PDF CDP1873C RCA-CDP1873C CDP187a CDP1873C CDP1874C

    sa0565

    Abstract: BAIF4M BA1F4M
    Text: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )


    OCR Scan     		PDF

    bTI51

    Abstract: fsjc F4CJ 2SJ209 TF230
    Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-


    OCR Scan     		PDF 2SJ209 IEI-620) bTI51 fsjc F4CJ 2SJ209 TF230

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B

    JT MARKING

    Abstract: X108 a3JE 0834 JE 720 transistor HJK MARKING
    Text: 7 s— S • 5/— K Compound Transistor F A IF4N rt/itN P N i fc“? * :>T «F 'J 3 V F7 v i* ;* ? Ì2HI W Ì • mm » o xN'^f r XÌÈÌTL £ 1*1/1 t X ^ £ -to 2 .8 + 0 .2 (R i = 22 kQ, R2= 47 kQ) 0 .6 5 ig ;ls 1 .5 C J _ o FN1F4N ¿; n > 7° U / > ? ij T ig ffl


    OCR Scan     		PDF PWS10 -55II JT MARKING X108 a3JE 0834 JE 720 transistor HJK MARKING

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y ^ $ / T ransistors g 2 Q 1 2 2 8 M e 1 ^ u N P N ^ 1 3 > h ^ > 7 * rfjiE S /D im e n sio n s Unit : mm t t * 1) VCE ( sa. is ^ 7 Epitaxial Planar NPN Silicon Transistor Power Amp. Z S D Io O O • 2SD1228M/2SD1860 X -f7 f iz'iM b X o 9 0 m V (T y p .) ( I c = 1 5 0 m A l B = 1 5 m A )


    OCR Scan     		PDF 2SD1228M/2SD1860 150mV

    CLC210AM

    Abstract: CLC210AI CLC200
    Text: In r Com I¡near Corporation £ ~ f2 3 /g Ç > 000674 i W s 0<f7Ÿ/t£€o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • p re c isio n , high sp e e d D to A con version • g ra p h ic C R T c o m p o s ite video d rive a m p


    OCR Scan     		PDF CLC210AI, CLC210AM MIL-STD-883B) 50MHz 500V//US CLC210 60Vppfrom CLC200-1. CLC210AM CLC210AI CLC200