FA01314
Abstract: VD58 MAX1785
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01314 GaAs FET HYBRID IC DESCRIPTION F A 0 1 3 1 4 is RF Hybrid 1C designed for 1 .7G H z band small size hand held radio. FEATURES • • • • • 40 % 3 3 (dBm) High efficiency High power High gain Small size Frequency range
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FA01314
FA01314
001701b
VD58
MAX1785
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> OOlfiObT 2T2 FA01314 GaAs FET HYBRID IC DESCRIPTION FA01314 is RF Hybrid IC designed for 1 ,7GHz band small size hand held radio. FEATURES 40 % • High efficiency • High power • High gain • Small size • Frequency range
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FA01314
FA01314
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Untitled
Abstract: No abstract text available
Text: ^M ITSUBISHI FA01314 ELECTRONIC DEVICE GROUP DESCRIPTION FA01314 is RF Hybrid IC designed for 1.7MHz band small size hand held radio. APPLICATIONS Small size hand held radio for 1,7GHz band FEATURES • High efficiency 35 % • High power 32 (dBm) •
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FA01314
FA01314
FA01314-01
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01314 GaAs F E T HYBRID IC DESCRIPTION FA01314 is RF Hybrid IC designed for 1.7GHz band small size hand held radio. FEATURES • • • • • 40 % 33 (dBm) High efficiency High power High gain Small size Frequency range
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FA01314
FA01314
0017G17
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