PKB3001U
Abstract: PTB32001X
Text: N AMER PHILIPS/DISCRETE ObE D • fab53131 G01507cl 4 ■ MAINTENANCE TYPE PKB3001U for new design use PT632001X T > 3 3 -O S r * < „ MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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PTB32001X)
PKB3001U
PKB3001U
PTB32001X
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BF939
Abstract: 60S2 N322 transistor BF939 n3220
Text: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.
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BF939.
001E354
BF939
60S2
N322
transistor BF939
n3220
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PBYR740
Abstract: M3202 M3201 PBYR735 PBYR745
Text: PBYR735 PBYR740 PBYR745 N AMER PHI LIPS/DISCRETE 2SE D 1 fab53131 0022157 1 • T-Ô Z- 17 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in
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PBYR735
PBYR740
PBYR745
b5313Ã
M3202
M3201
PBYR745
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K 3699 transistor
Abstract: BLY88A 3699 npn pscw
Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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GGmi32
BLY88A
K 3699 transistor
BLY88A
3699 npn
pscw
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BZV85
Abstract: c8v2 BB531 c9v1
Text: N AMER PHILIPS/DISCRETE SSE D • bb53T31 OOlbTBI Q ■ BZV85 SERIES A _ T-// -/ 3 VOLTAGE REGULATOR DIODES V - Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended fo r stabilization purposes. The series covers the normalized E24 ± 5% range o f nominal working voltages
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BZV85
DO-41
7Z82194
c8v2
BB531
c9v1
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D IS CRETE - E5E D • 1^53=131 D D i m O S Q ■ I BD242; BD242A BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier
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BD242;
BD242A
BD242B;
BD242C
BD241C.
BD242
T-33-19
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BTV58-600R
Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
Text: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are
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BTV58
T0-220AB
BTV58â
1000R
BTV58-600R
transistor BU 921 T
DIODE 25PH 200
gate turn off thyristors
600R
M1601
M1602
25ls gt
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L31A
Abstract: 131H BUS131 BUS131A BUS131H
Text: • DEVELOPMENT DATA ^53=131 GGia7b7 7 ■ [I This data sheet contains a v a n c e in form ation and specifications are subject to change w ith o u t notice. BUS131 SERIES N AMER PHILIPS/DISCRETE 2SE D T - 33-/3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO -3 envelope, intended fo r use in very fast
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BUS131
T-33-/3
BUS131H
L31A
131H
BUS131A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D btiSBTBl QDISTSE 1 BSR17 BSR17A -T -3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica tions in thick and thin-film circuits. QUICK REFERENCE DATA
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BSR17
BSR17A
fab53131
T-35-li
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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