VBUS052CD-FAH
Abstract: No abstract text available
Text: V ishay I n tertech n o l o g y, I n c . Diodes - ESD Array with Flow-Through Design AND TEC I INNOVAT O L OGY VBUS052CD-FAH, VBUS054CD-FHI N HN Diodes O 19 62-2012 ESD Bus Port Protection Array in Ultra-Small LLPxx13 Plastic Package FEATURES • • • •
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VBUS052CD-FAH,
VBUS054CD-FHI
LLPxx13
IEC61000-4-2)
LLP1713
LLP2513
1394/Firewire
VBUS054CD-FHI
LLP1713
LLP2513
VBUS052CD-FAH
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES VBUS052CD-FAH, VBUS054CD-FHI ESD Bus Port Protection Array in Ultra-Small LLPxx13 Plastic Package FEATURES • • • • - and 4-line ESD protection with flow-through design 2 Capacitance Cd = 0.8 pF
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VBUS052CD-FAH,
VBUS054CD-FHI
LLPxx13
IEC61000-4-2)
LLP1713
LLP2513
1394/Firewire
VBUUS054CD-FHI
LLP1713
LLP2513
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FAH 37
Abstract: SSOP16 TD62706 TD62706P TD62706A-H
Text: TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P−H,TD62706FA−H 6CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62706P−H and TD62706FA−H are comprised of six source current Transistor Arrays. These drivers are specifically designed for fluorescent display
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TD62706P-H/FA-H
TD62706P-H
TD62706FA-H
TD62706FA-H
DIP16pin
SSOP16pin
FAH 37
SSOP16
TD62706
TD62706P
TD62706A-H
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Untitled
Abstract: No abstract text available
Text: TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P−H,TD62706FA−H 6CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62706P−H and TD62706FA−H are comprised of six source current Transistor Arrays. These drivers are specifically designed for fluorescent display
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TD62706P-H/FA-H
TD62706Pâ
TD62706FAâ
DIP16pin
SSOP16pin
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87C42
Abstract: keyboard matrix using 8051 IC laptop keyboard schematic matrix 8042 pinout keyboard schematic xt 4*4 matrix keypad 8051 laptop keyboard schematic intel 8042 microcontroller, ibm pc keyboard pinout laptop 88h-8Fh
Text: TECHNICAL USER’S MANUAL FOR: Digital-Logic AG MultiKey/42L Technical Reference V1.11 R:\HANDBUCH\DIVERSE\DIGITAL-LOGIC MultiKey.doc Nordstr. 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 36 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MultiKey/42L Manual V1.11
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MultiKey/42L
CH-4542
MultiKey/42L
Parkwa071h
87C42
keyboard matrix using 8051 IC
laptop keyboard schematic matrix
8042 pinout
keyboard schematic xt
4*4 matrix keypad 8051
laptop keyboard schematic
intel 8042 microcontroller, ibm pc
keyboard pinout laptop
88h-8Fh
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2FAH-C20R
Abstract: b2 diode
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
5M/CS0202
b2 diode
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Untitled
Abstract: No abstract text available
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
e/TF0206
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FAH diode
Abstract: K375 DIODE FAH 45
Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode
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OM50F60PB
OM45L120PB
OM35F120PB
MIL-S-19500,
35F120HB
FAH diode
K375
DIODE FAH 45
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TD62706
Abstract: TD62706FA-H TD62706P-H fah 06
Text: TOSHIBA TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62706P-H, TD62706FA-H 6ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62706P-H is and TD62706FA-H are comprised of six TD62706P-H source current Transistor Array. This driver is specifically designed for fluorescent display
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TD62706P-H/FA-H
TD62706P-H,
TD62706FA-H
TD62706P-H
TD62706FA-H
DIP16PIN
SSOP16PIN
-50mA
DIP16-P-300-2
TD62706
fah 06
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TD62706P-H/FA-H TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr>fi57flfiP-H Tu n fi? 7a n<*mtfiF• mA»-H■ ■ ■ ■ m ug m 6ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62706P-H is and TD62706FA-H are comprised of six source current Transistor Array.
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TD62706P-H/FA-H
fi57flfiP-H
TD62706P-H
TD62706FA-H
TD62706P-H
DIP16PIN
SSOP16PIN
TD62706FA-H
DIP16-P-300-2
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FAH diode
Abstract: D617 M/diode fah 23
Text: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics
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12063/A
SD153N/R
SD153N/R.
D-616
D-617
FAH diode
D617
M/diode fah 23
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51001Z
Abstract: siemens VFT i314 laserdiode application
Text: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power
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51001Z
51QQ2Z
Q62702-P3013
51001Z
siemens VFT
i314
laserdiode application
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FAH diode
Abstract: STL 1550 STT 3 SIEMENS AOO E Q62702-P3042 EE-70 552 diode m 552 diode
Text: SIEM EN S 1550 nm Laser in Receptacle Package, Low Power STL 81ÜQ7X * * * * Designed or application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodindfl at rear mirror tor monitoring and
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STL61Ã
Q62702-P3042
81007X
I54fl
FAH diode
STL 1550
STT 3 SIEMENS
AOO E
EE-70
552 diode
m 552 diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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FAH DIODE
Abstract: FAH diode 28
Text: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The
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b427525
L5009
1310nm
L5009
h427S2S
00ET24E
FAH DIODE
FAH diode 28
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KSD5001
Abstract: KSD5002 tv samsung samsung tv T 33 16AF
Text: SAMSUNG SEMICO NDU CTO R 1ME D INC | Q 0 0 ?b 3 fl 7 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5001 T-33-1 3 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector-fiaM Voltage' Vcao=1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25° C)
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KSD5001
71b4142
T-33-I
-55-M150
KSD5002
KSD5001
KSD5002
tv samsung
samsung tv
T 33
16AF
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OP265W
Abstract: No abstract text available
Text: OPTEK Product Bulletin OP265W Ju ne 1996 GaAIAs Plastic Infrared Emitting Diode Type OP265W .125 3.18 i .115 (2.92) •165 (4.19) .M 5 (3.68) io n NOM .125 (2.92) z r ■025 (0.64) .015 (0.38) .030 (0.76)NOM — .500 (12.70) — MIN FOR IDENTIFICATION PURPOSES, ANODE LEAD IS
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OP265W
OP265W
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Untitled
Abstract: No abstract text available
Text: -fid?Z£25 N E C ELECTRONICS l í S l u « DD1 . I Î , L r INC 98D “ 185:21 T~y/-a^ TA S H E IT P c lim im n l NEC LASER DIODE ELECTRON DEVICE NDL3110 830 nm OPTICAL DISK MEMORY APPLICATION AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE D ESCR IPTIO N
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NDL3110
1987M
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QS 100 NPN Transistor
Abstract: KSD5013 KSD5014 samsung tv C 3311 transistor
Text: SAMSUNG SEMICONDUCTOR INC D | GOQ?bbfl 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T-33-11 CO LO R TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage V c b o = 1 5 0 0 V A b s o l u t e m a x i m u m r a t i n g s (Ta=25°c)
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KSD5013
T-33-11
KSD5014
QS 100 NPN Transistor
KSD5013
KSD5014
samsung tv
C 3311 transistor
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FAH diode
Abstract: nec re M/diode fah 42
Text: N E C ELECTRONICS INC bZE D • b 42? 5 S5 D 0 3 B Q 35 SÛT H N E C E DATA SHEET N E C L A S E R D I O D E NDL5800D ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5800D is 1310 nm DFB Distributed Feed-back laser diode chip on carrier w ith ribbon lead. This device is designed
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NDL5800D
NDL5800D
b427S2S
FAH diode
nec re
M/diode fah 42
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transistor 9014
Abstract: TRW POWER 0PI3150 transistor 9014 C npn MW131 0PI3250 OPI3150 OPI315Q QPI3250 9014 npn
Text: OPTEK TECHNOLOGY INC DbE D | hT^âSÛO 0000a4t. 1 | Optoelectronics Division TRW Electronic Components Group 1987 Cost Saver Product! C a | , TRW f jr mofe information! Product Bulletin 5221 January 1 9 8 5 # - MX.WW ^ y Optically Coupled Isolators Types QPI3150, OPI325Q
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000Da4ti
OPI315Q,
0PI325Q
0PI315
transistor 9014
TRW POWER
0PI3150
transistor 9014 C npn
MW131
0PI3250
OPI3150
OPI315Q
QPI3250
9014 npn
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP200D TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP200D PBX MODEM *FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP200D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP200D is a 2-Form-A switch which is suitable for
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TLP200D
TLP200D
54SOP8)
UL1577,
E67349
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ADB13
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.
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NDL7001
NDL7001
LC-2298)
ADB13
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OPI3150
Abstract: MW131 0PI3150 0PI3250 OPI3250 QPI3150
Text: OPTEK TECHNOLOGY INC OL.E D | b7^flS00 000024t. 1 | O p to e le c tro n ic s D iv is io n T R W Electronic Components Group 1 9 8 7 C o s t S a v e r P ro d u c t! C a |, T R W f r m o fe in fo r m a tio n ! M a r A A H 'j u j r M W W Product Bulletin 5 2 2 1
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000D2Mti
QPI3150,
0PI325Q
671B032
OPI3150
MW131
0PI3150
0PI3250
OPI3250
QPI3150
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