smd transistor w1a
Abstract: smd transistor w1a 95 w1a 71 smd Transistor smd transistor w1a 83 transistor w1a 94 W1A smd transistor transistor SMD W1A smd transistor w1a 25 prodigit 3311c SMD W1A
Text: www.fairchildsemi.com Prototype Report AC/DC Converter Power Supply using FSDH321BM Fairchild Power Switch • European AC Input Voltage ( 185VRMS – 265 VRMS) • Total Output Power 8.5W • One DC Output: 12V / 700mA 2006 Fairchild Semiconductor Page 1
|
Original
|
PDF
|
FSDH321BM
185VRMS
700mA
230VRMS.
EN55022)
230VRMS
smd transistor w1a
smd transistor w1a 95
w1a 71 smd Transistor
smd transistor w1a 83
transistor w1a 94
W1A smd transistor
transistor SMD W1A
smd transistor w1a 25
prodigit 3311c
SMD W1A
|
Untitled
Abstract: No abstract text available
Text: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDS86141
|
FDS86141
Abstract: No abstract text available
Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDS86141
FDS86141
|
FDS86141
Abstract: No abstract text available
Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDS86141
FDS86141
|
FDS86141
Abstract: SOIC127P600 SOIC127P600X175-8M
Text: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDS86141
FDS86141
SOIC127P600
SOIC127P600X175-8M
|
Untitled
Abstract: No abstract text available
Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDS86141
FDS86141
|
NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
|
Original
|
PDF
|
IntegraU404
LSU405
LSU406
LS841
LS842
LS421
LS422
LS423
LS424
NPD5564
NPD5566
BFY91
IMF3958
2N3050
NF5458
Fairchild E212
MP842
J9100
SST5638
|
702 A TRANSISTOR
Abstract: TRansistor 701 702 P TRANSISTOR
Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
MJE700/701/702/703
MJE800/801/802/803
O-126
MJE700/701
MJE702/703
MJE703STU
702 A TRANSISTOR
TRansistor 701
702 P TRANSISTOR
|
transistor k 702
Abstract: TRANSISTOR S 802 kse800
Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
KSE800/801/802/803
KSE700/701/702/703
O-126
KSE800/801
KSE802/803
KSE802/803
KSE800
KSE800S
transistor k 702
TRANSISTOR S 802
|
transistor H 802
Abstract: No abstract text available
Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
KSE800/801/802/803
KSE700/701/702/703
O-126
KSE800/801
KSE802/803
KSE802/803
transistor H 802
|
Untitled
Abstract: No abstract text available
Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
KSE700/701/702/703
KSE800/801/802/803
O-126
KSE700/701
KSE702/703
|
transistor H 802
Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
MJE800/801/802/803
MJE700/701/702/703
O-126
MJE800/801
MJE802/803
MJE802/803
E800STU
transistor H 802
702 TRANSISTOR npn
702 P TRANSISTOR
obsolete ic cross reference
702 Fairchild
|
702 y TRANSISTOR
Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
KSE700/701/702/703
KSE800/801/802/803
O-126
KSE700/701
KSE702/703
KSE703
KSE703S
702 y TRANSISTOR
702 Z TRANSISTOR
transistor marking 702 application
marking 702 FAIRCHILD
ic 701
|
MJE800
Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
MJE800/801/802/803
MJE700/701/702/703
O-126
MJE800/801
MJE802/803
MJE802/803
O-126
MJE802STU
MJE800
TRANSISTOR S 802
MJE800/801/803 equivalent
|
|
|
ic 701
Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor
|
Original
|
PDF
|
MJE700/701/702/703
MJE800/801/802/803
O-126
MJE700/701
MJE702/703
ic 701
ic 701 fairchild
702 transistor
701 transistor
mje700
TRansistor 701
|
1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
|
OCR Scan
|
PDF
|
BR-BR-0034-58
1n813 fairchild
2N3303
abb inverter manual acs 800
FD6666 diode
2N3137
UA703 equivalent
FD200 diode
2N2369 AVALANCHE PULSE GENERATOR
UA716
Fairchild dtl catalog
|
sn76131
Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Text: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE
|
OCR Scan
|
PDF
|
-38510/M
S-11620
sn76131
sn76670
uA703
ua702
Fairchild dtl catalog
ca3458
UA703 equivalent
UA740
703HC
lm741
|
1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
|
OCR Scan
|
PDF
|
301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
|
CCD442A
Abstract: CCD442
Text: LDWAL CCD442A 2048 x 2048 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ 2048 x 2048 Photosite Array 15^m x 15fim Pixel 30.72mm x 30.72mm Image Area Near 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons at 250k
|
OCR Scan
|
PDF
|
CCD442A
15fim
15/im.
0G0137t>
CCD442
|
D4104
Abstract: LTA 703 S
Text: IVIITEL T e c h n ic a l D a t a MD41Ö4 ISO-CMOS Quad Low Voltage to High Voltage Translator with 3-State Outputs FE B . 79 • PIN-FOR-PIN COMPATIBLE WITH FAIRCHILD’S F4104/34104 LOGIC AND CONNECTION DIAGRAM • NO LATCH-UP PROBLEMS • 3-STATE FULLY BUFFERED OUTPUTS
|
OCR Scan
|
PDF
|
F4104/34104
D4104
LTA 703 S
|
22202
Abstract: F4104 MD4104 MD4104BC MD4104BD 25cmax
Text: M IT E L T e c h n ic a l D a t a MD4104 ISO-CMOS Quad Low Voltage to High Voltage Translator with 3-State Outputs F E B . 79 LOGIC AND CONNECTION DIAGRAM • PIN-FOR-PIN COMPATIBLE WITH FAIRCHILD’S F4104/34104 • NO LATCH-UP PROBLEMS • 3-STATE FULLY BUFFERED OUTPUTS
|
OCR Scan
|
PDF
|
F4104/34104
MD4104
22202
F4104
MD4104BC
MD4104BD
25cmax
|
74F161 PC
Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
Text: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti
|
OCR Scan
|
PDF
|
|
D4515
Abstract: d4518bc 74c920 74C929 4031B JRC 4069UBF D4518 74ls247 fairchild linear integrated circuits 74c14
Text: o #1 ’ FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C a lifo rn ia 9 4 0 4 2 ‘ 1977 F a irch ild C am era and In stru m e n t C o rp o ra tio n /4 6 4 E llis S treet. M o u n ta in View. C a lifo rn ia 94042 / 4 15 9 6 2-5 0 1 1/TW X 910-3
|
OCR Scan
|
PDF
|
24-Pin
D4515
d4518bc
74c920
74C929
4031B JRC
4069UBF
D4518
74ls247
fairchild linear integrated circuits
74c14
|
MA703
Abstract: 703H
Text: /xA703 <y RF-IF AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRC UITS G E N E R A L D E S C R IP T IO N — T h e /j A 7 0 3 is a m o n o lith ic R F - IF A m p lifie r c onstructed using the F a irc h ild P la n a r* e p ita x ia l process and is inte n d e d fo r use as a lim itin g or n o n -lim itin g a m p lifie r,
|
OCR Scan
|
PDF
|
/xA703
mA703
/iA703
MA703
703H
|
