induction heating ic
Abstract: SGL60N90DG3YD induction heating saturation
Text: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
|
Original
|
SGL60N90DG3
O-264
SGL60N90DG3
SGL60N90DG3TU
SGL60N90DG3M1TU
SGL60N90DG3YDTU
O-264
induction heating ic
SGL60N90DG3YD
induction heating saturation
|
PDF
|
FGL40N150DTU
Abstract: No abstract text available
Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
|
Original
|
FGL40N150D
FGL40N150D
O-264
FGL40N150DTU
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
|
Original
|
SGF15N90D
SGF15N90D
SGF15N90DTU
|
PDF
|
igbt 1000v 10A
Abstract: No abstract text available
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt 1000v 10A
|
PDF
|
igbt induction cooker
Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt induction cooker
induction heating cooker
induction cooker circuit with IGBT
induction cooker application notes
induction cooker
fairchild induction cooker
fairchild induction heater
induction cooker component
induction heater
|
PDF
|
HMC415
Abstract: microwave mosfet
Text: MICROWAVE CORPORATION v00.0103 A SIMPLE CMOS POWER CONTROL CIRCUIT FOR THE HMC408LP3 AMPLIFIER General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.
|
Original
|
HMC408LP3
HMC407MS8G
HMC413QS16G
HMC414MS8G
HMC415LP3
HMC415
microwave mosfet
|
PDF
|
HMC408LP3
Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Text: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.
|
Original
|
HMC408LP3
HMC327MS8G
HMC406MS8G
HMC314
HMC326MS8G
HMC407MS8G
HMC408LP3
HMC413QS16G
HMC408
HMC415
FDC6323L
HMC314
HMC326MS8G
HMC327MS8G
HMC406MS8G
HMC407MS8G
HMC413QS16G
|
PDF
|
SGL40N150
Abstract: igbt 40a 600v
Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
|
Original
|
SGL40N150
SGL40N150
O-264
igbt 40a 600v
|
PDF
|
SGL40N150
Abstract: No abstract text available
Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
|
Original
|
SGL40N150
SGL40N150
O-264
SGL40N150TU
O-264
|
PDF
|
SGF15N90D
Abstract: No abstract text available
Text: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
|
Original
|
SGF15N90D
SGF15N90D
|
PDF
|
fairchild induction heater
Abstract: SGL60N90DG3
Text: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
|
Original
|
SGL60N90DG3
O-264
fairchild induction heater
SGL60N90DG3
|
PDF
|
FGL40N150D
Abstract: No abstract text available
Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
|
Original
|
FGL40N150D
FGL40N150D
O-264
|
PDF
|
SGL40N150D
Abstract: No abstract text available
Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
|
Original
|
SGL40N150D
SGL40N150D
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
|
Original
|
SGL40N150D
SGL40N150D
O-264
SGL40N150DTU
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
|
PDF
|
ECJ-1VB1H102K
Abstract: RMPA0966
Text: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,
|
Original
|
RMPA0966
28dBm
ECJ-1VB1H102K
|
PDF
|
Solder Paste, Indium 5.8
Abstract: ECJ-1VB1H102K RMPA1966 SN63 SN96 grm39
Text: PRELIMINARY RMPA1966 i-Lo tm WCDMA Band II Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28.5dBm Pout The RMPA1966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA
|
Original
|
RMPA1966
16dBm)
16dBm
Solder Paste, Indium 5.8
ECJ-1VB1H102K
SN63
SN96
grm39
|
PDF
|
GTO MODULE
Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
Text: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA
|
Original
|
RMPA1766
28dBm
16dBm)
16dBm
GTO MODULE
ECJ-1VB1H102K
SN63
SN96
Solder Paste, Indium 5.8
|
PDF
|
TOp-264 vg
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
TOp-264 vg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
|
PDF
|
ATC550L104KT
Abstract: No abstract text available
Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB
|
Original
|
AVM-273HP+
27dBm
DG1677-1
ATC550L104KT
|
PDF
|
GRM39Y5V104Z16V
Abstract: No abstract text available
Text: February 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency 85 mA total current at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm
|
Original
|
RMPA1963
CDMA2000-1X
GRM39Y5V104Z16V
|
PDF
|
