Photo Diodes
Abstract: Photo diode circuit diagram
Text: SMD SILICON PHOTO DIODES BL-LS1311PD Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
PDF
|
BL-LS1311PD
Photo Diodes
Photo diode circuit diagram
|
BL-L512PD
Abstract: Gan photo diode
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
PDF
|
BL-L512PD
30KHz
300Hz
100KHz
10KHz
BL-L512PD
Gan photo diode
|
BL-L4802PD
Abstract: PHOTO GAP DETECTOR
Text: SILICON PHOTO DIODES BL-L4802PD Features: Ø 5*3.8*6.5mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
PDF
|
BL-L4802PD
30KHz
300Hz
100KHz
10KHz
BL-L4802PD
PHOTO GAP DETECTOR
|
BL-L3522PD
Abstract: PHOTO GAP DETECTOR L352 blue light PHOTO detector
Text: SILICON PHOTO DIODES BL-L3522PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
PDF
|
BL-L3522PD
30KHz
300Hz
100KHz
10KHz
BL-L3522PD
PHOTO GAP DETECTOR
L352
blue light PHOTO detector
|
BL-LS3528A0S1PD
Abstract: No abstract text available
Text: SMD SILICON PHOTO DIODES BL-LS3528A0S1PD Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity.
|
Original
|
PDF
|
BL-LS3528A0S1PD
2000pcs/Reel
BL-LS3528A0S1PD
|
PHOTO DIODES
Abstract: BL-L3522PD
Text: SILICON PHOTO DIODES BL-L3522PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
PDF
|
BL-L3522PD
23g/pcs
PHOTO DIODES
BL-L3522PD
|
Untitled
Abstract: No abstract text available
Text: SMD SILICON PHOTO DIODES BL-LS3528A0S1PD Ø Ø Ø Ø Ø Ø Ø Ø Ø Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity.
|
Original
|
PDF
|
BL-LS3528A0S1PD
2000pcs/Reel
|
PHOTO GAP DETECTOR
Abstract: BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector
Text: SILICON PHOTO DIODES BL-L4802PD Features: 5*3.8*6.5mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
|
Original
|
PDF
|
BL-L4802PD
880nm
940nm
430nm/Blue
470nm/Blue
505nm/Ultra
525nm/Ultra
PHOTO GAP DETECTOR
BL-L4802PD
infrared 5mm 940nm GaAs
blue light PHOTO detector
|
PHOTO DIODES
Abstract: BL-L512PD
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.The epoxy package itself is an IR filter, spectrally matched
|
Original
|
PDF
|
BL-L512PD
PHOTO DIODES
BL-L512PD
|
smd transistor a4
Abstract: a4 smd transistor transistor SMD a4 smd diode A4 smd a4 transistor LED photo darlington transistor IC PACKAGE OP501DA DARLINGTON SMD TRANSISTOR OP500 A4 smd transistor A4
Text: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens
|
Original
|
PDF
|
OP500,
OP501,
OP500DA,
OP501DA
OP501
OP500
OP500DA
OP501DA
smd transistor a4
a4 smd transistor
transistor SMD a4
smd diode A4
smd a4 transistor
LED photo darlington transistor IC PACKAGE
DARLINGTON SMD TRANSISTOR
A4 smd transistor A4
|
smd transistor a2
Abstract: OP501DA
Text: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens
|
Original
|
PDF
|
OP500,
OP501,
OP500DA,
OP501DA
OP501
OP500
OP500DA
OP501DA
smd transistor a2
|
smd transistor A1
Abstract: smd transistor A1 3 PIN smd transistor A1 4 PIN chip die npn transistor transistor smd A1 SMD Transistor A1 80 transistor a1 smd OP501DA
Text: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: x x x x x High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens
|
Original
|
PDF
|
OP500,
OP501,
OP500DA,
OP501DA
OP501
OP500
OP500DA
OP501DA
smd transistor A1
smd transistor A1 3 PIN
smd transistor A1 4 PIN
chip die npn transistor
transistor smd A1
SMD Transistor A1 80
transistor a1 smd
|
smd transistor a4
Abstract: OP501DA
Text: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens
|
Original
|
PDF
|
OP500,
OP501,
OP500DA,
OP501DA
OP501
OP500
OP500DA
OP501DA
smd transistor a4
|
Diode smd code cm
Abstract: 905nm smd code EE Diode smd code ag ir receiver smd diode 2 pin
Text: SMD - RECEIVER CERAMIC CHIP SMD PHOTO PIN Diode CFD 30 MADE IN GERMANY Description: Features: High reliability Fast response time Small junction capacitance Low noise High photo sensitivity Large radiant sensitivity area of 3,97 mm2 net Chip Size : 2,25 mm x 2,25 mm
|
Original
|
PDF
|
905nm)
Diode smd code cm
905nm
smd code EE
Diode smd code ag
ir receiver smd diode 2 pin
|
|
|
ON1387
Abstract: CNA1014H Photo Interrupters
Text: Transmissive Photosensors Photo lnterrupters CNA1014H (ON1387) Photo Interrupters Unit: mm • Outline ■ Features • Position detection accuracy: 0.3 mm • With attachment positioning boss • Fast response: tr , tf = 5 µs (typ.) Parameter Input (Light
|
Original
|
PDF
|
CNA1014H
ON1387)
ON1387
CNA1014H
Photo Interrupters
|
CFD 10
Abstract: No abstract text available
Text: SMD - RECEIVER CERAMIC CHIP SMD PHOTO PIN Diode +., 5 MADE IN GERMANY Description: 3/99 Features: High Reliability Real surface mount component with a ceramic chip base. Fast Response Time The silicon Photo PIN Diode provides the positive side on the Low Dark Current
|
Original
|
PDF
|
830nm,
950nm
CFD 10
|
NJL6201R-1
Abstract: 650nm dvd laser diode 10 pin 700 mw TRNS10
Text: NJL6201R-1 HIGH SPEED PIN PHOTO DIODE OUTLINE typ. Unit : mm GENERAL DESCRIPTION Active area: 0.7X0.7mm The NJL6201R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast 1.16 ±0.15 1.8 ±0.15 0.9 ±0.15 monitor of optical storage devices.
|
Original
|
PDF
|
NJL6201R-1
NJL6201R-1
at1-99%
780nm/650nm
300MHz
780nm
650nm
650nm
dvd laser diode 10 pin 700 mw
TRNS10
|
smd code Lx
Abstract: max3035
Text: SMD - RECEIVER CERAMIC CHIP SMD PHOTO PIN Diode CFD 20 NEW MADE IN GERMANY Description: 09/02 Features: High reliability Fast response time Small junction capacitance Low noise High photo sensitivity Large radiant sensitivity area of 4,55 mm2 net Chip Size : 2,54 mm x 2,54 mm
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NJL6201R-1 HIGH SPEED PIN PHOTO DIODE GENERAL DESCRIPTION OUTLINE typ. Unit : mm Active area: 0.7X0.7mm The NJL6201R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast 1.16 ±0.15 1.8 ±0.15 0.9 ±0.15 monitor of optical storage devices.
|
Original
|
PDF
|
NJL6201R-1
NJL6201R-1
at1-99%
780nm/650nm
300MHz
780nm
650nm
|
PD15-22C
Abstract: IS09001
Text: EV/ERLIGHT IS09001 QS9000 APPROVED Subminiature Clear State Photo Diode PD15-22C Features: • HIGH PHOTO SENSITIVITY. • FAST RESPONSE TIMES. • SMALL JUNCTION CAPACITANCE. Descriptions: PD15-22C is a high speed and highly sensitive PIN photo diode in a flat
|
OCR Scan
|
PDF
|
IS09001
QS9000
PD15-22C
PD15-22C
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components OC40 PHOTO COUPLER GENERAL DESCRIPTION The 0 0 4 0 is a photo coupler, which combines a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package. With a response as fast as 100ns. FEATURES
|
OCR Scan
|
PDF
|
100ns.
Outpu18
|
BPW 64 photo
Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
Text: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: Ultra-schneller Foto-Detektor Application: Ultra high speed photo-detector Besondere Merkmale: Features: • Kurze Ansprechzeiten bei kleinen Spannungen • Fast response times at low operating voltages
|
OCR Scan
|
PDF
|
5033/IEC
BPW 64 photo
PHOTOVOLTAIC CELL
Fotodiode
BPW24
"PHOTOVOLTAIC CELL"
BPW 64 photo diode
BPW 64
photovoltaic
A1183
Din 5033
|
BPW34 circuit
Abstract: BPW34 application BPW34 stra DN5033
Text: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: S chneller Foto-D etektor Application: High speed photo d e tecto r Besondere Merkmale: Features: • Kurze Ansprechzeiten • Fast response tim es • G eringe Sperrschichtkapazität • Small ¡unction capacitance
|
OCR Scan
|
PDF
|
BPW34
5033/EC
BPW34 circuit
BPW34 application
BPW34
stra
DN5033
|
BPW75
Abstract: IAL66 cm5 marking
Text: TELEFUNKEN ELECTRONIC 17E D • 0000450 T IAL66 BPW75 IMUIPtiiniK electronic CrMtfv«TechnoioQt#* 1 Silicon Photo PIN Diode A p p lication s: High speed photo detector Features: • Fast response times i Angie of half sensitivity ± 9 *= 65° • Sm all junction capacitance
|
OCR Scan
|
PDF
|
IAL66
BPW75
IAL66
cm5 marking
|
