5AAFT
Abstract: No abstract text available
Text: ERD27ERD77 10A*1000V »±'<9-*y*-K • a « g a E ? y *-K : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated ch ip H ig h reverse v o lta g e c a p a b ility • 7>9"sY'ffc S tu d m o u n te d : Applications 9 S w itc h in g p o w e r s u p p lie s
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ERD27ERD77
I95t/R89)
5AAFT
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High-Rel Discrete Semiconductors
Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Text: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied
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1N5415
1N5420
1N5550
1N5554
SCSFF05,
SCSFF10,
SCSFF15
SCSM05,
PDAcatalog2010
High-Rel Discrete Semiconductors
fast recovery diode 1000v 10A
fast recovery diode 400v 5A
fast recovery diode 600v 5A
IN4954
150a 400v diode bridge
diode 50v 5A
3-Phase Full-Wave Bridge Rectifier
Zener Diode Glass 50v
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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Untitled
Abstract: No abstract text available
Text: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •
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APT30DF100HJ
OT-227)
Absolute84)
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8005-K
Abstract: BPC35 Collmer Semiconductor kbpc3510 RDF005-RDF10 kbpc 50a 10m BPC6005-KBPC610 RKBPC6005 CD600 RW00SM AKBPC3504
Text: < s Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. Single-phase, full-wave bridge rectifiers in 4-pin Dual-in-Line packages. 50V to 1000V VRRM . 1A (l0 ), 30A peak one-half cycle surge. Epoxy package has UL94V-0 flame retardant rating. Lead solderable per MIL-STD
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005-D
UL94V-0
RDF005-RDF10
KBPC15/25/35
RKBPC3504
RKBPC3510
RKBPC3502
D002073
BPC3500
8005-K
BPC35
Collmer Semiconductor kbpc3510
kbpc 50a 10m
BPC6005-KBPC610
RKBPC6005
CD600
RW00SM
AKBPC3504
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fast recovery diode 1000v 30A
Abstract: 6RI50E-080M5 ESAL-01-01C 6RI30G-160 2fi300a-060 6RI75G-160B 6RI100G160 2RI250E-060 diode 100a 1000v 6RI75G160B
Text: DIODE MODULES Quick Selection Guide Nov-01 Comprehensive chart Rated current General use diode modules Repetitive peak reverse voltage VRRM 300V 30A 50A 600V 800V 6RI30E-060 6RI30E-080 6RI50E-060 6RI50E-080 1000V 1200V 1600V 6RI30G-120 6RI30G-160 6RI50E-080B
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Nov-01
6RI30E-060
6RI30E-080
6RI50E-060
6RI50E-080
6RI30G-120
6RI30G-160
6RI50E-080B
6RI50E-080M5
6RI75E-060
fast recovery diode 1000v 30A
6RI50E-080M5
ESAL-01-01C
6RI30G-160
2fi300a-060
6RI75G-160B
6RI100G160
2RI250E-060
diode 100a 1000v
6RI75G160B
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URG30100C
Abstract: RURG30100CC URG30100
Text: RURG30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2935.3 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft
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RURG30100CC
RURG30100CC
110ns)
110ns
URG30100C
URG30100
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URG30100C
Abstract: RURG30100CC
Text: RURG30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30100CC
RURG30100CC
110ns)
110ns
175oC
URG30100C
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RURH30100CC
Abstract: URH30100C
Text: RURH30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURH30100CC
RURH30100CC
110ns)
110ns
175oC
URH30100C
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RUR30100
Abstract: rur30100 Diode RURP30100
Text: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP30100
RURP30100
110ns)
110ns
175oC
RUR30100
rur30100 Diode
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URH30100C
Abstract: RURH30100CC 1225AL diode 1000V 100a
Text: RURH30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft
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RURH30100CC
RURH30100CC
110ns)
110ns
URH30100C
1225AL
diode 1000V 100a
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igbt 1000v 30a
Abstract: RURG30100
Text: RURG30100 Data Sheet Title URG 100 bt A, 00V rafa ode) utho eyrds A, 00V rafa January 2000 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG30100
RURG30100
110ns)
110ns
igbt 1000v 30a
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RHR30100
Abstract: RHR30100C RHRG30100CC RHR30
Text: RHRG30100CC Data Sheet January 2002 30A, 1000V Hyperfast Dual Diode Features The RHRG30100CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRG30100CC
RHRG30100CC
175oC
RHR30100
RHR30100C
RHR30
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rur30100 Diode
Abstract: RUR30100 RURP30100
Text: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,
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RURP30100
RURP30100
110ns)
110ns
rur30100 Diode
RUR30100
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RHR30100
Abstract: rhr30100 diode RHRP30100 HRP 100
Text: RHRP30100 Data Sheet Title HRP 100 bt A, 00V pert ode) utho rpoon, pert odes vache ergy ted, itch wer pes, wer itch File Number 3940.2 30A, 1000V Hyperfast Diode Features The RHRP30100 is a hyperfast diode with soft recovery characteristics trr < 65ns). It has half the recovery time of
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RHRP30100
RHRP30100
RHR30100
rhr30100 diode
HRP 100
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RHR30100
Abstract: RHRP30100 rhr30100 diode
Text: RHRP30100 Data Sheet January 2002 30A, 1000V Hyperfast Diode Features The RHRP30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP30100
RHRP30100
175oC
RHR30100
rhr30100 diode
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RHRG30100
Abstract: No abstract text available
Text: RHRG30100 Data Sheet Title HR 010 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3941.2 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery
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RHRG30100
RHRG30100
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RHRG30100
Abstract: No abstract text available
Text: RHRG30100 Data Sheet January 2002 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRG30100
RHRG30100
175oC
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RHR30100
Abstract: RHR30100C RHRG30100CC
Text: RHRG30100CC Data Sheet Title HR 010 C bt A, 00V pert al ode) utho January 2000 File Number 3942.2 30A, 1000V Hyperfast Dual Diode Features The RHRG30100CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns). It has half the recovery
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RHRG30100CC
RHRG30100CC
RHR30100
RHR30100C
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25CPF
Abstract: 30CPF 30CPF10 30CPF12 30EPF 30EPF10 30EPF12
Text: Preliminary Data Sheet I2138 09/97 QUIETIR Series 30EPF. 30CPF. HV FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.41V @ 30A trr = 95 ns VRRM 1000 to 1200V Description/Features The 30EPF. & 30CPF. soft recovery QUIETIR rectifier series has been optimized for combined
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I2138
30EPF.
30CPF.
30CPF
25CPF
O-247AC
30CPF10
30CPF12
30EPF
30EPF10
30EPF12
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MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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60CPF10
Abstract: 60CPF12 60EPF10 60EPF12
Text: Preliminary Data Sheet I2130 07/97 QUIETIR Series 60EPF. 60CPF. HV FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.2V @ 30A trr = 95 ns VRRM 1000 to 1200V Description/Features The 60EPF. & 60CPF. fast soft recovery QUIETIR rectifier series has been optimized for combined short
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I2130
60EPF.
60CPF.
60CPF10
60CPF12
60EPF10
60EPF12
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Untitled
Abstract: No abstract text available
Text: APT10026JLL 1000V 30A 0.260Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026JLL
OT-227
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igbt induction cooker
Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
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FGA50N100BNTD
FGA50N100BNTD
FGA50N100BNTDTU
igbt induction cooker
FGA50N100
"induction cooker" circuit
induction cooker circuit with IGBT
induction heating cooker
IC for induction cooker
IGBT 600V 30A TO-3P
IGBT 1000V 60A
BNTD
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