FAST RECOVERY DIODE 200ns
Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Text: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max
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NTE6200
NTE6210
NTE6200
NTE6202)
NTE6206
NTE6210)
200ns
NTE6200,
NTE6206
NTE6202,
FAST RECOVERY DIODE 200ns
fast recovery diode 1a trr 200ns
fast recovery diode 2a trr 200ns
TO3 package RthJC
diode 15A
FAST RECOVERY DIODE 200ns 2a
NTE6202
NTE6208
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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150A diode
Abstract: 300V switching transistor QCA150BA60 600v 3a ultra fast recovery diode high hfe transistor E7610
Text: TRANSISTOR MODULE Hi- QCA150BA60 UL;E76102 M QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA150BA60
E76102
QCA150BA60
200ns)
200mA
300mA
150A diode
300V switching transistor
600v 3a ultra fast recovery diode
high hfe transistor
E7610
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fast recovery diode 2a trr 200ns
Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Text: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
200ns)
130mA
fast recovery diode 2a trr 200ns
vvvf motor
600v 2A ultra fast recovery diode
dc motor control 100A
Darlington 300v
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QCA75BA60
Abstract: fast recovery diode 1a trr 200ns 600v 1.5a fast recovery transistor 600V 75A ultra fast recovery time diode 100ma
Text: TRANSISTOR MODULE Hi- QCA75BA60 UL;E76102 M QCA75BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA75BA60
E76102
QCA75BA60
200ns)
100mA
150mA
fast recovery diode 1a trr 200ns
600v 1.5a fast recovery
transistor 600V 75A
ultra fast recovery time diode 100ma
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darlington 8A 300V
Abstract: 300V switching transistor SQD400BA60 M6 transistor
Text: TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated
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SQD400BA60
E76102
SQD400BA60
200ns)
530mA
darlington 8A 300V
300V switching transistor
M6 transistor
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diode 300v 200A
Abstract: 200A diode 026A darlington 8A 300V QCA200BA60 dual DIODE 200A 600V transistor 026a
Text: TRANSISTOR MODULE Hi- QCA200BA60 UL;E76102 M QCA200BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA200BA60
E76102
QCA200BA60
200ns)
diode 300v 200A
200A diode
026A
darlington 8A 300V
dual DIODE 200A 600V
transistor 026a
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
200ns
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU150120
RURU150120
200ns)
200ns
175oC
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Vbe 40 transistor
Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
Text: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated
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SQD300BA60
E76102
SQD300BA60
200ns)
400mA
Vbe 40 transistor
600v 10A ultra fast recovery diode
diode module 6A
darlington power transistor 10a
fast recovery diode 1a trr 200ns
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-263-3-2
O-263AB)
K06N60
fast recovery diode 2a trr 200ns
SKB02N60
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
SKB02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
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SKB02N60
Abstract: SKP02N60 200v 1.5v 3a diode
Text: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
O-220AB
Q67040-S4214
O-263AB
Q67040-S4215
Mar-00
SKB02N60
SKP02N60
200v 1.5v 3a diode
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K06N60
Abstract: SKB02N60 PG-TO-263-3-2
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N60
PG-TO-263-ain
K06N60
SKB02N60
PG-TO-263-3-2
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB02N60
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K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation Short circuit withstand time – 10 s
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SKB02N120
PG-TO-263-3-2
K02N120
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QF30AA60
Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V
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SQD200A40/60
E76102
SQD200A
95max
IC200A,
62max
110Tab
30max
VCEX400/600V
QF30AA60
QF20AA60
TRANSISTOR JC
SQD200A60
SQD300A40
SQD200A40
D 1380 Transistor
SQD400BA60
20S0
sqd300a60
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Q67040-S4215
Abstract: SKB02N60 SKP02N60
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
Jul-02
Q67040-S4215
SKB02N60
SKP02N60
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