FAST RECOVERY DIODE 200ns
Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Text: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max
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NTE6200
NTE6210
NTE6200
NTE6202)
NTE6206
NTE6210)
200ns
NTE6200,
NTE6206
NTE6202,
FAST RECOVERY DIODE 200ns
fast recovery diode 1a trr 200ns
fast recovery diode 2a trr 200ns
TO3 package RthJC
diode 15A
FAST RECOVERY DIODE 200ns 2a
NTE6202
NTE6208
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fast recovery diode 2a trr 200ns
Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Text: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
200ns)
130mA
fast recovery diode 2a trr 200ns
vvvf motor
600v 2A ultra fast recovery diode
dc motor control 100A
Darlington 300v
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FRG25BA60
Abstract: FRG25CA120 FRS150BA50 FRS300BA50 FRG25BA
Text: DIODE MODULE（F.R.D.） FRG25BA60 UL;E76102 （M） FRG25BA60 is a high speed（fast recovery）isolated diode module designed for high power switching application. FRG25BA60 is suitable for high frequency application requiring low loss and high speed control.
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FRG25BA60
E76102
FRG25BA60
AV25A
trr100ns
IF400A
Tj150
FRS400EA180/200
FRG25CA120
FRS150BA50
FRS300BA50
FRG25BA
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Untitled
Abstract: No abstract text available
Text: 1N3893 MECHANICAL DATA Dimensions in mm 17.65 0.695 17.39 (0.685) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) DUAL FAST RECOVERY RECTIFIER IN A TO259 HERMETIC PACKAGE 1.14 (0.707) 0.88 (0.035) 13.84 (0.545) 13.58 (0.535)
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1N3893
200nS
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IC-100A
Abstract: QCA100BA60 hFE-750
Text: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
IC-100A
hFE-750
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QCA100BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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Q67040-S4340
Abstract: SKA06N60
Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Aug-00
Q67040-S4340
SKA06N60
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FAST RECOVERY DIODE 200ns 8A 40V
Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Apr-00
FAST RECOVERY DIODE 200ns 8A 40V
6A, 100v fast recovery diode
Q67040-S4340
SKA06N60
200v 1.5v 3a diode
400v 3a low vf diode
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K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-263-3-2
O-263AB)
K06N60
fast recovery diode 2a trr 200ns
SKB02N60
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K04N60
Abstract: SKP04N60 PG-TO-220-3-1
Text: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP04N60
PG-TO-220-3-1
O-220AB)
K04N60
SKP04N60
PG-TO-220-3-1
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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K06N60
Abstract: PG-TO-263-3-2 SKB06N60
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB06N60
PG-TO-263-ain
K06N60
PG-TO-263-3-2
SKB06N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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K04n60
Abstract: No abstract text available
Text: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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SKB04N60
O-220,
SKB04N60
K04n60
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K04N60
Abstract: No abstract text available
Text: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP04N60
PG-TO-220-3-1
O-220AB)
SKP04N60
K04N60
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Untitled
Abstract: No abstract text available
Text: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB04N60
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SKB04N60
Abstract: SKP04N60 Q67040-S4229
Text: SKP04N60 SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP04N60
SKB04N60
O-220AB
Q67040-S4216
O-263AB
Q67040-S4229
Mar-00
SKB04N60
SKP04N60
Q67040-S4229
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Untitled
Abstract: No abstract text available
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB06N60
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K04N60
Abstract: 600VDC SKB04N60
Text: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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SKB04N60
O-220,
600Vtain
K04N60
600VDC
SKB04N60
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Untitled
Abstract: No abstract text available
Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode (trr: 200ns). The mounting base of the
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QCA100BA60
E76102
200ns)
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smd 1gw
Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Text: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N
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DO-15
DO-41
DO-201AD
S5277B
S5566B
S5688B
U1BC44
1S1885A
1R5BZ41
smd 1gw
diode Z47
1ZB36
1ZB20 zener
U1DL49
1ZB20
6B4B41
FAST RECOVERY DIODE 200ns 2a
1B4B41
J2C42
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transistor S104
Abstract: 2N5549
Text: The FET as a Chopper Application Report B60 Texas Instruments Limited • Manton Lane Bedford • Phone 0234 67466 • Telex 82178 SUMMARY Characteristics o f the F.E.T. applicable to switching/ chopping circuits are first discussed in general and with respect to ‘on’ and ‘o f f equivalent circuits.
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Ci540390
transistor S104
2N5549
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