Untitled
Abstract: No abstract text available
Text: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 °C junction operating temperature Easy paralleling
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IDW100E60
PG-TO-247-3
D100E60
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R/1N5815 Diode
Abstract: No abstract text available
Text: IDW75E60 Fast Switching Emitter Controlled Diode Features: • 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant
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IDW75E60
PG-TO247-3
D75E60
R/1N5815 Diode
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d100e60
Abstract: IDW100E60
Text: IDW100E60 Fast Switching Emitter Controlled Diode Features: • 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant
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IDW100E60
PG-TO247-3
D100E60
d100e60
IDW100E60
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APT50GF60B2RD
Abstract: APT50GF60LRD LRD 07 50GF60B2RD
Text: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
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APT50GF60B2RD
APT50GF60LRD
20KHz
O-264
APT50GF60B2RD/LRD
APT50GF60B2RD
APT50GF60LRD
LRD 07
50GF60B2RD
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LRD 07
Abstract: IC-7060
Text: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
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APT50GF60B2RD
APT50GF60LRD
20KHz
O-264
APT50GF60B2RD/LRD
LRD 07
IC-7060
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features Fast Recovery time characteristic
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HFA120FA60
270nC
OT-227
OT-227
08-Mar-07
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HFA120FA60
Abstract: IRFP250
Text: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features Fast Recovery time characteristic
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HFA120FA60
270nC
OT-227
OT-227
HFA120FA60
IRFP250
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diode k2
Abstract: HFA120FA60P
Text: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic
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I27245
HFA120FA60P
270nC
70A/s
OT-227
HFA120EA60)
HFA120FA60)
12-Mar-07
diode k2
HFA120FA60P
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Untitled
Abstract: No abstract text available
Text: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic
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I27245
HFA120FA60P
270nC
OT-227
OT-227
HFA120EA60)
OT-227)
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93051
Abstract: diode k2
Text: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features Fast Recovery time characteristic
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HFA120FA60
270nC
OT-227
12-Mar-07
93051
diode k2
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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High-Rel Discrete Semiconductors
Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Text: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied
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1N5415
1N5420
1N5550
1N5554
SCSFF05,
SCSFF10,
SCSFF15
SCSM05,
PDAcatalog2010
High-Rel Discrete Semiconductors
fast recovery diode 1000v 10A
fast recovery diode 400v 5A
fast recovery diode 600v 5A
IN4954
150a 400v diode bridge
diode 50v 5A
3-Phase Full-Wave Bridge Rectifier
Zener Diode Glass 50v
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
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Untitled
Abstract: No abstract text available
Text: APTGU120DA120T Boost chopper PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application NTC2 VBUS VBUS SENSE CR1 • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Power MOS 7 Punch Through PT IGBT
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APTGU120DA120T
50kHz
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Untitled
Abstract: No abstract text available
Text: APTGU120DU120T Dual common source PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q2 G2 E1 E2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 Benefits
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APTGU120DU120T
50kHz
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Untitled
Abstract: No abstract text available
Text: APTGU120SK120T Buck chopper PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application VBUS NTC2 • • Q1 G1 AC and DC motor control Switched Mode Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff
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APTGU120SK120T
50kHz
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IGBT 1200V 60A
Abstract: No abstract text available
Text: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 NTC2 NTC Full bridge top switches : Trench + Field Stop IGBT
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APTGV50H120BTPG
IGBT 1200V 60A
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IGBT full bridge
Abstract: APT0406 APT0502
Text: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 0/VBUS1 E NTC2 Full bridge top switches : Trench + Field Stop IGBT
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APTGV50H120BTPG
IGBT full bridge
APT0406
APT0502
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K40T1202
Abstract: IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3-21 IGBT 40A k40t12
Text: nd IKW40N120T2 TrenchStop 2 Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs
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IKW40N120T2
K40T1202
IGBT K40T1202
K40T120
IKW40N120
IKW40N120T2
PG-TO-247-3-21
IGBT 40A
k40t12
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600v 60A fast recovery diode
Abstract: HUR60100 HUR60120 100V 60A Diode fast recovery diode 600v 120a
Text: HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100 HUR60120 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max.
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HUR60100,
HUR60120
O-247AC
HUR60100
600v 60A fast recovery diode
HUR60100
HUR60120
100V 60A Diode
fast recovery diode 600v 120a
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K40T1202
Abstract: IGBT K40T1202 K40T120 IKW40N120T2 1200v 50A IGBT
Text: TrenchStop Low Loss DuoPack : nd IKW40N120T2 2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs
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IKW40N120T2
K40T1202
IGBT K40T1202
K40T120
IKW40N120T2
1200v 50A IGBT
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fast recovery diode 600v 120a
Abstract: HUR60100 HUR60120
Text: HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100 HUR60120 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max.
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HUR60100,
HUR60120
O-247AC
HUR60100
fast recovery diode 600v 120a
HUR60100
HUR60120
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Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: fast recovery diode 600v 120a
Text: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B
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HUR2x60-100,
HUR2x60-120
OT-227
HUR2x60-100
Epitaxial Diode FRED VRRM 1200 V 40 ns
fast recovery diode 600v 120a
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k40T1202
Abstract: IGBT K40T1202 K40T120 IKW40N120T2 k40T1202 datasheet IKW40N120 igbt 40A 600V power supply 300W 5v 50a PG-TO-247-3 100MJ
Text: TrenchStop 2 Low Loss DuoPack : nd IKW40N120T2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs
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IKW40N120T2
k40T1202
IGBT K40T1202
K40T120
IKW40N120T2
k40T1202 datasheet
IKW40N120
igbt 40A 600V
power supply 300W 5v 50a
PG-TO-247-3
100MJ
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Untitled
Abstract: No abstract text available
Text: APTGV50H120BTPG Boost chopper + full bridge NPT & Trench + Field Stop IGBT3 Power module Q1 Q3 G1 CR5 CR1 C OUT2 OUT1 Q4 Q2 Q5 CR5B CR2 E2 E NTC1 G4 CR4 E4 0/VBUS1 NTC Features • Q2, Q4, Q5 FAST Non Punch Through (NPT IGBT) - Switching frequency up to 100 kHz
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APTGV50H120BTPG
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