diode 400V 6A
Abstract: D06E60
Text: IDP06E60 Fast Switching Diode Emitter Controlled Diode Product Summary VRRM Features 600 V IF 6 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage PG-TO220-2
|
Original
|
PDF
|
IDP06E60
PG-TO220-2
IEC61249-2-21
D06E60
diode 400V 6A
D06E60
|
SMD TRANSISTOR 12a
Abstract: smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D
Text: STTA1206G TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr typ 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.
|
Original
|
PDF
|
STTA1206G
SMD TRANSISTOR 12a
smd transistor marking p3
SMD TRANSISTOR MARKING P2
SMD TRANSISTOR MARKING ed
smd transistor marking p1
MOSFET TRANSISTOR SMD MARKING A1
STTA1206G
smd transistor marking Av
12A p transistor smd
STTA1206D
|
STTA1206D
Abstract: STTA1206DI marking L6A
Text: STTA1206D I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr (typ) 28ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.
|
Original
|
PDF
|
STTA1206D
O220AC
STTA1206D
STTA1206DI
STTA1206DI
marking L6A
|
GP19NC60WD
Abstract: No abstract text available
Text: STGP19NC60WD N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT General features Type VCES STGP19NC60WD 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode
|
Original
|
PDF
|
STGP19NC60WD
O-220
GP19NC60WD
|
SIDC03D60F6
Abstract: L4324
Text: SIDC03D60F6 Fast switching diode A Features: • 600V Emitter Controlled technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • power modules and discrete devices C Applications:
|
Original
|
PDF
|
SIDC03D60F6
L4324M,
SIDC03D60F6
L4324
|
Untitled
Abstract: No abstract text available
Text: SIDC02D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology Features: • 600V Emitter Controlled 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • Power module
|
Original
|
PDF
|
SIDC02D60C8
L4012M,
|
SWITCHING TRANSISTOR C114
Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Text: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
|
Original
|
PDF
|
IRGPC30FD2
10kHz)
O-247AC
C-116
SWITCHING TRANSISTOR C114
C114 E S W transistor
C114 transistor
for C114 transistor
IRGPC30FD2
C-111
C-113
C-114
C-115
ic c113 61
|
C-107
Abstract: C-108 IRGBC30FD2 c103 a ge
Text: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
|
Original
|
PDF
|
IRGBC30FD2
10kHz)
O-220AB
C-108
C-107
C-108
IRGBC30FD2
c103 a ge
|
C-107
Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
|
Original
|
PDF
|
IRGBC30FD2
10kHz)
O-220AB
C-108
C-107
C-108
IRGBC30FD2
transistor c107 m
IRGBC30
c103 a ge
|
c103 a ge
Abstract: C-107 C-108 IRGBC30FD2
Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
|
Original
|
PDF
|
IRGBC30FD2
10kHz)
O-220AB
C-108
c103 a ge
C-107
C-108
IRGBC30FD2
|
IRGBC30MD2
Abstract: No abstract text available
Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2
10kHz)
O-220AB
C-364
IRGBC30MD2
|
IRGBC30MD2
Abstract: No abstract text available
Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2
10kHz)
O-220AB
C-364
IRGBC30MD2
|
transistor c373
Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380 o
transistor c380
AN-994
IRGBC30MD2-S
SMD-220
C380 ge
Tx/c380 transistor
|
C394 transistor
Abstract: iC C393 IRGPC30MD2 C389 GE c394 transistor C393
Text: Previous Datasheet Index Next Data Sheet PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGPC30MD2
10kHz)
O-247AC
C-396
C394 transistor
iC C393
IRGPC30MD2
C389
GE c394
transistor C393
|
|
|
transistor c373
Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380
transistor c380 o
AN-994
IRGBC30MD2-S
SMD-220
transistor c374
C374
|
Mosfet
Abstract: SSF12N60F
Text: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications
|
Original
|
PDF
|
SSF12N60F
O220F
Mosfet
SSF12N60F
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
PDF
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
STTA1212D
Abstract: il6a
Text: STTA1212D TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 12A VRRM 1200V trr typ 50 ns VF (max) 2.0 V K A IF(AV) FEATURES AND BENEFITS A K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
|
Original
|
PDF
|
STTA1212D
O-220AC
STTA1212D
il6a
|
Untitled
Abstract: No abstract text available
Text: International ^Rectifier P D - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short Circuit Rated Fast CoPack IGBT V ces = 600V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail” losses
|
OCR Scan
|
PDF
|
IRGPC30MD2
-10ps
10kHz)
C-395
DQ2Q165
O-247AC
C-396
|
C394 transistor
Abstract: cr-e5
Text: International [ior]Rectifier P D - 9.1082 IRGPC30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Short circuit rated -10ps @125°C, V qe = 15V • Switching-loss rating includes all "tail' losses
|
OCR Scan
|
PDF
|
-10ps
10kHz)
IRGPC30MD2
O-247AC
C-396
C394 transistor
cr-e5
|
Untitled
Abstract: No abstract text available
Text: P D - 9.1108 bitemational I»»]Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •Short circuit rated -10ps @ 125°C, V Ge = 15V ’ Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
-10ps
10kHz)
IRGBC30MD2
C-363
O-22QAB
C-364
|
transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
|
Untitled
Abstract: No abstract text available
Text: PD- 91751A International Rectifier MR IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • V e ry Low 1 .5 9 V v o ta g e drop V ces = 600V • 2 .5 kV , 6 0 s insulation voltage • 4 .8 m m cre a p ag e distance to heatsink
|
OCR Scan
|
PDF
|
1751A
IRG4IBC30FD
|
toshiba 6jg11
Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Text: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage
|
OCR Scan
|
PDF
|
6JG11
6BG11
6DG11
6FG11
6GG11
13Max.
3-11B1A
12BG11-12JG11
12BH11
toshiba 6jg11
12GH11
12JG11
12JH11
6JG11
12GG11
IF-10A
6DG11
6GG11
12BG11
|
