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    FBGA 12 X 19 PACKAGE TRAY Search Results

    FBGA 12 X 19 PACKAGE TRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FBGA 12 X 19 PACKAGE TRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1f1-1717-a19

    Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
    Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O


    Original     		PDF 60WMBG 60M/54WBGA-8 10X15 10-8X12-A LA69-00635A 48TBGA 48-TBGA-10 0-8X16-O LA69-00267A ADS11981 1f1-1717-a19 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9

    fBGA package tray 12 x 19

    Abstract: EPAK TRAY FBGA THICK TRAY fbga Substrate design guidelines JEDEC Kostat FBGA EPAK Kostat PSR4000 SLB128B AN-1125
    Text: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2


    Original     		PDF

    taiyo PSR4000

    Abstract: Shipping Trays kostat 10 x 10 nitto hc100 Kostat tray PSR4000 aus5 EPAK EPAK TRAY JEDEC Kostat PSR4000 aus5
    Text: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2


    Original     		PDF

    TAIYO PSR 4000

    Abstract: manual PACE PSR 800 HC-100-X2 Ablebond 8360 TAIYO PSR 4000 soldermask JEDEC Kostat FBGA PSR4000-AUS5 TAIYO PSR 2000 csp192 FBGA THICK TRAY
    Text: National Semiconductor Application Note 1125 Shaw W. Lee and Wayne Lee June 2000 Introduction CHIP SCALE PACKAGES Laminate substrate based CSPs are an extension of National Semiconductor’s current Plastic Ball Grid Array PBGA technology and are the package of choice for portable applications. CSPs are available in two package designs: Laminate CSP and Fine Pitch Ball Grid Array (FBGA).


    Original     		PDF

    TAIYO PSR 4000

    Abstract: manual PACE PSR 800 CCL-HL-832 fbga Substrate design guidelines JEDEC Kostat FBGA CCL-HL832 ablebond esec 3018 operation kostat bga 6mm x 6mm nitto hc100
    Text: National Semiconductor Application Note 1125 Shaw W. Lee and Wayne Lee June 2000 Introduction CHIP SCALE PACKAGES Laminate substrate based CSPs are an extension of National Semiconductor’s current Plastic Ball Grid Array PBGA technology and are the package of choice for portable applications. CSPs are available in two package designs: Laminate CSP and Fine Pitch Ball Grid Array (FBGA).


    Original     		PDF

    S29WS128N

    Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
    Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-N S71WS-N S29WS128N S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N marking YJ AM

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    66 ball nor flash

    Abstract: S71WS-P BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P
    Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-P 66 ball nor flash BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    S71WS-R

    Abstract: dc m9 footprint S29WS128R S29WS512R s71ws256rc0h
    Text: S71WS-R based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-R based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-R dc m9 footprint S29WS128R S29WS512R s71ws256rc0h

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    DA12A

    Abstract: No abstract text available
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		PDF S72WS-N 16-bit DA12A

    EP4CE6 package

    Abstract: EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80
    Text: Package Information Datasheet for Altera Devices DS-PKG-16.3 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead


    Original     		PDF DS-PKG-16 EP4CE6 package EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    s29al004d55

    Abstract: S29AL016D70TFI010 am29LV8000 S29PL064J70BFI120 S29AL016D70BFI020 Am29LV8000B S29JL064H90TFI000 S29AL008D70TFI020 S29JL032H70TFI020 S29JL032
    Text: ORDERING PART NUMBER MAPPING GUIDE March, 2005 Release AMD PRODUCTS FUJITSU PRODUCTS SPANSION PRODUCTS Am29LV400B S29AL004D Am29LV800B/D S29AL008D Am29LV160D MBM29LV160TE/BE S29AL016D Am29LV160M S29AL016M Am29DL32xG TSOP MBM29DL32xE • MBM29DL32F • MBM29DL34F (TSOP)


    Original     		PDF Am29LV400B S29AL004D Am29LV800B/D S29AL008D Am29LV160D MBM29LV160TE/BE S29AL016D Am29LV160M S29AL016M Am29DL32xG s29al004d55 S29AL016D70TFI010 am29LV8000 S29PL064J70BFI120 S29AL016D70BFI020 Am29LV8000B S29JL064H90TFI000 S29AL008D70TFI020 S29JL032H70TFI020 S29JL032

    EP4CE15

    Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
    Text: Altera Device Package Information Datasheet DS-PKG-16.2 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead


    Original     		PDF DS-PKG-16 EP4CE15 MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22

    MD300-10A

    Abstract: QFN tray tray datasheet bga SIP 400B TSOP TRAY 40 PIN BGA package tray 64 NEC A39A 240 TSOP package tray 6-tsop TRAY DIMENSIONS 132 PGA
    Text: CHAPTER 4 CHAPTER 4 4.1 PACKING STYLES AND NOTES 4.1.1 Packing Styles 4.1.2 Notes on Handling 4.2 PACKING OF IC PACKAGES 4.2.1 List of Packing 1 DIP (2) SIP, V-DIP, ZIP (3) QUIP, Piggyback (4) PGA (5) SOP, SSOP (6) TSOP (I) (II) (7) QFP, QFP (FP) (8) SVP


    Original     		PDF S64F1-CA1 S108S1-YHC P116S1-YJC S144S1-YKC S176S1-2C S224S1-3C-1 S304S1-6C S256N7-B6 S352N7-F6-1 S420N7-F6 MD300-10A QFN tray tray datasheet bga SIP 400B TSOP TRAY 40 PIN BGA package tray 64 NEC A39A 240 TSOP package tray 6-tsop TRAY DIMENSIONS 132 PGA

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


    Original     		PDF S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		PDF REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI

    31136

    Abstract: S71NS064JA0BFW21
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics


    Original     		PDF S71NS128JA0/S71NS064JA0 16-Bit) Am29F Am29LV 31136A3 31136 S71NS064JA0BFW21

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		PDF S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball