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    FC40SA50FKP Search Results

    FC40SA50FKP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FC40SA50FKPBF International Rectifier Transistor Mosfet N-CH 500V 40A 4SOT-227 TUBE Original PDF

    FC40SA50FKP Datasheets Context Search

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    a50fk

    Abstract: mosfet 440 mhz
    Text: FC40SA50FKP Vishay High Power Products Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS on


    Original
    PDF FC40SA50FKP OT-227 2002/95/EC 18-Jul-08 a50fk mosfet 440 mhz

    Untitled

    Abstract: No abstract text available
    Text: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227


    Original
    PDF FC40SA50FKP OT-227 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227


    Original
    PDF FC40SA50FKP OT-227 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: FC40SA50FKP Vishay High Power Products HEXFET Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness RoHS COMPLIANT • Fully characterized capacitance and avalanche voltage


    Original
    PDF FC40SA50FKP OT-227 18-Jul-08

    FC40SA50FK

    Abstract: No abstract text available
    Text: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227


    Original
    PDF FC40SA50FKP OT-227 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 FC40SA50FK

    Untitled

    Abstract: No abstract text available
    Text: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227


    Original
    PDF FC40SA50FKP OT-227 2002/95/EC 18-Jul-08

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter