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    Lattice Semiconductor Corporation FCRAM-ONE-XM-N1

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    FCRAM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCRAM-Controller Fujitsu Synthesizable High Performance FCRAM Controller Original PDF
    FCRAM-ONE-E2-N1 Lattice Semiconductor Software, Programmers, Development Systems, FAST CYCLE RAM I CTLR ECP/EC Original PDF
    FCRAM-ONE-XM-N1 Lattice Semiconductor Software, Programmers, Development Systems, FAST CYCLE RAM FCRAM I CTLR XP Original PDF

    FCRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11424-1E 16 Mbit Mobile FCRAMTM MB82D01181E-60L New released • FEATURES • Asynchronous SRAM interface • Byte Control with LB, UB pin Low Power Consumption Power Down Mode Chip/Wafer Business SRAM compatible pinout FBGA


    Original     		NP05-11424-1E MB82D01181E-60L MB82D01181E PDF

    Untitled

    Abstract: No abstract text available
    Text: Graphic Display Controller D 0:31 HOST BUS INTERFACE PCI/Host Interface A(0:23) Pixel Bus MB86276 Video Input and Scaler Display Controller MD(0:31) 64MByte SDRAM or FCRAM External Memory Controller YUV/RGB Digital RGB 2D Rendering Engine MA(0:14) Description


    Original     		MB86276 64MByte MB86276 MB86296 32-bit 16-bit GDC-FS-21148-2/2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11414-1E 32Mbit Mobile FCRAM 1.8V, Fast Page Mode MB82DPS02183B-80/-80L/-85/-85L New released • FEATURES • • Asynchronous SRAM interface 8 Words Page Address Access Capability _ • • • • • •


    Original     		NP05-11414-1E 32Mbit MB82DPS02183B-80/-80L/-85/-85L 16Mbit MB82DPS02183B 16BIT PDF

    Untitled

    Abstract: No abstract text available
    Text: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View


    Original     		MB82DPS02183B MB82D01160 MB82D01161, 16M-bit 128Mb PDF

    TC59LM836DKB

    Abstract: TC59LM836DKB-33
    Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network


    Original     		TC59LM836DKB-33 288Mbits 152-WORDS 36-BITS TC59LM836DKB PDF

    F0110

    Abstract: 004C2000
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •


    Original     		MB82D01161-85/-85L/-90/90L 576-WORD MB82D01161 16-bit 16bit 90nany F0110 F0110 004C2000 PDF

    MB82D01181E

    Abstract: MB82D01181E-60L
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11424-4E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L • DESCRIPTION MB82D01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access


    Original     		DS05-11424-4E MB82D01181E-60L MB82D01181E 16-bit F0607 MB82D01181E-60L PDF

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original     		DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11406-1E MEMORY CMOS 2 x 512 K × 16 Bit Single Data Rate I/F FCRAMTM Extended Temp.Version Consumer/Embedded Application Specific Memory MB81E161622-10-X/-12-X CMOS 2-Bank × 524,288-Word × 16 Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate


    Original     		DS05-11406-1E MB81E161622-10-X/-12-X 288-Word MB81E161622 16-bit PDF

    BGA-101P-M01

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM


    Original     		DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01 PDF

    DQR10

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11409-1E MEMORY CMOS 2 x 512K × 32-BIT× 2-PART DUAL PART SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB811L646449-12/18 • DESCRIPTION The Fujitsu MB811L646449 is a Dual Part Single Data Rate Interface Fast Cycle Random Access Memory


    Original     		DS05-11409-1E 32-BIT× MB811L646449-12/18 MB811L646449 32-bit MB811L646449 DQR10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11410-2E MEMORY CMOS 2 x 512K × 32-BIT SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB811L323229-12/18 • DESCRIPTION The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory FCRAM*


    Original     		DS05-11410-2E 32-BIT MB811L323229-12/18 MB811L323229 32-bit F0205 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11407-3E MEMORY CMOS 2 x 512 K × 16 BIT / 2 × 256 K × 32 BIT SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB81ES171625/173225-12/-15 • DESCRIPTION The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory FCRAM* containing 16,777,216


    Original     		DS05-11407-3E MB81ES171625/173225-12/-15 MB81ES171625/173225 F0306 PDF

    f0602

    Abstract: MB82DS01181E MB82DS01181E-70LWT-A
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-1E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A • DESCRIPTION MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access


    Original     		DS05-11434-1E MB82DS01181E-70L-A MB82DS01181E 16-bit F0602 f0602 MB82DS01181E-70LWT-A PDF

    32 KB SRAM

    Abstract: DS05-50208-1E SWITCH SA125
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash


    Original     		DS05-50208-1E MB84LD23381EJ-10 101-ball MB84VD23381EJ-90 32 KB SRAM DS05-50208-1E SWITCH SA125 PDF

    SA70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_W Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM


    Original     		MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 71-ball F0006 SA70 PDF

    32 KB SRAM

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash


    Original     		DS05-50209-2E MB84VD23381EJ-90 32 KB SRAM MBM29DL640E PDF

    71PIN

    Abstract: MB82DBS04163C MB82DBS04163C-70L
    Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11425-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS04163C-70L New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)


    Original     		NP05-11425-2E MB82DBS04163C-70L 71pin MB82DBS04163C MB82DBS04163C MB82DBS04163C-70L PDF

    MB82D01160-90LPBT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01160-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION


    Original     		MB82D01160-90/90L 576-WORD MB82D01160 16-bit MB82D01160-90LPBT PDF

    SA70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EF/VD22387EF/VD22388EF-90 MB84VD22396EF/VD22397EF/VD22398EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM


    Original     		MB84VD22386EF/VD22387EF/VD22388EF-90 MB84VD22396EF/VD22397EF/VD22398EF-90 71-ball F0006 SA70 PDF

    MB84VR5E3J1A1

    Abstract: No abstract text available
    Text: 63 &,$/ ($785( 6(&7,21  0%95(-$0%/5(-$ ‡ ‡ ‡ 3-Chip Stacked MCP with 64 M-Bit NOR-Type Flash Memory,16 M-Bit Mobile FCRAM , and 4 M-Bit SRAM: MB84VR5E3J1A1/ MB84LR5E3J1A1 ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡


    Original     		MB84VR5E3J1A1/ MB84LR5E3J1A1 MB84VR5E3J1A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11431-2E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L • DESCRIPTION The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous


    Original     		DS05-11431-2E MB82DP04183C-65L MB82DP04183C 16-bit F0603 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate


    Original     		DS05-11402-1E MB81P643287-50/-60 144-WORD MB81P643287 32-bit F0005 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original     		DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 PDF