FLD5F20NP-D30
Abstract: FLD5F20NP-D33 FLD5F20 10 gb laser diode
Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-D FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Available at C Band ITU-T grid wavelengths between 1529.55 - 1563.05nm • Modulation voltage applied only to modulator section
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550nm
FLD5F20NP-D
10Gb/s.
FCSI0202M200
FLD5F20NP-D30
FLD5F20NP-D33
FLD5F20
10 gb laser diode
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FLD5
Abstract: 10 gb laser diode Fujitsu laser
Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP
10Gb/s.
FCSI0202M200
FLD5
10 gb laser diode
Fujitsu laser
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electroabsorption modulator quantum well
Abstract: 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps
Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP-C
10Gb/s.
FCSI0202M200
electroabsorption modulator quantum well
10 gb laser diode
10ghz optical modulator
mqw-dfb
optical modulator semiconductor
PIN photodiode 5ghz
PIN photodiode ps
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9.5-10.5GHz
Abstract: No abstract text available
Text: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM0910-25F
44dBm
FLM0910-25F
FCSI0202M200
9.5-10.5GHz
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fujitsu flu
Abstract: fujitsu gaas fet L-band
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE
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FLU35ZM
FLU35ZM
FCSI0202M200
fujitsu flu
fujitsu gaas fet L-band
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IM320
Abstract: fujitsu flu fujitsu gaas fet L-band
Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE
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FLU17ZM
FLU17ZM
FCSI0202M200
IM320
fujitsu flu
fujitsu gaas fet L-band
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FMM5057VF
Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage
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FMM5057VF
FMM5057VF
FCSI0202M200
7.1 power amplifier circuit diagram
fujitsu power amplifier GHz
Fujitsu Quantum Devices
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Untitled
Abstract: No abstract text available
Text: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB = 42.0dBm Typ. ・High Gain: G1dB = 6.0dB(Typ.) ・High PAE: ηadd = 26%(Typ.) ・Broad Band: 14.0 ~ 14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package
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FLM1414-15F
FLM1414-15F
FCSI0202M200
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FMM5056VF
Abstract: 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
Text: FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8~7.2GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5056VF is a MMIC amplifier that contains a four-stage
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FMM5056VF
FMM5056VF
FCSI0202M200
005s11
fujitsu power amplifier GHz
power amplifier mmic
154-12
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FLU10
Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE
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FLU10ZM
FLU10ZM
FCSI0202M200
FLU10
fujitsu flu
fujitsu gaas fet L-band
pae100
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Untitled
Abstract: No abstract text available
Text: FMM5052ZE 0.8-2.7GHz Power Amplifier MMIC FEATURES ・Wide Frequency Band : 0.8 to 2.7GHz ・Medium Power : P1dB=26dBm Typ. @ f=0.8-2.7GHz ・High Linear Gain : GL=19dB(Typ.) @ f=0.8-2.7GHz ・Impedance Matched Zin/Zout=50Ω ・Wide Operating Temperature Range
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FMM5052ZE
26dBm
SSOP-16
FMM5052ZE
FCSI0202M200
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