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    FLD5F20NP-D30

    Abstract: FLD5F20NP-D33 FLD5F20 10 gb laser diode
    Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-D FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Available at C Band ITU-T grid wavelengths between 1529.55 - 1563.05nm • Modulation voltage applied only to modulator section


    Original     		550nm FLD5F20NP-D 10Gb/s. FCSI0202M200 FLD5F20NP-D30 FLD5F20NP-D33 FLD5F20 10 gb laser diode PDF

    FLD5

    Abstract: 10 gb laser diode Fujitsu laser
    Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		550nm FLD5F20NP 10Gb/s. FCSI0202M200 FLD5 10 gb laser diode Fujitsu laser PDF

    electroabsorption modulator quantum well

    Abstract: 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps
    Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		550nm FLD5F20NP-C 10Gb/s. FCSI0202M200 electroabsorption modulator quantum well 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps PDF

    9.5-10.5GHz

    Abstract: No abstract text available
    Text: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		FLM0910-25F 44dBm FLM0910-25F FCSI0202M200 9.5-10.5GHz PDF

    fujitsu flu

    Abstract: fujitsu gaas fet L-band
    Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE


    Original     		FLU35ZM FLU35ZM FCSI0202M200 fujitsu flu fujitsu gaas fet L-band PDF

    IM320

    Abstract: fujitsu flu fujitsu gaas fet L-band
    Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE


    Original     		FLU17ZM FLU17ZM FCSI0202M200 IM320 fujitsu flu fujitsu gaas fet L-band PDF

    FMM5057VF

    Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
    Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage


    Original     		FMM5057VF FMM5057VF FCSI0202M200 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB = 42.0dBm Typ. ・High Gain: G1dB = 6.0dB(Typ.) ・High PAE: ηadd = 26%(Typ.) ・Broad Band: 14.0 ～ 14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package


    Original     		FLM1414-15F FLM1414-15F FCSI0202M200 PDF

    FMM5056VF

    Abstract: 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
    Text: FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5056VF is a MMIC amplifier that contains a four-stage


    Original     		FMM5056VF FMM5056VF FCSI0202M200 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12 PDF

    FLU10

    Abstract: fujitsu flu fujitsu gaas fet L-band pae100
    Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE


    Original     		FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5052ZE 0.8-2.7GHz Power Amplifier MMIC FEATURES ・Wide Frequency Band : 0.8 to 2.7GHz ・Medium Power : P1dB=26dBm Typ. @ f=0.8-2.7GHz ・High Linear Gain : GL=19dB(Typ.) @ f=0.8-2.7GHz ・Impedance Matched Zin/Zout=50Ω ・Wide Operating Temperature Range


    Original     		FMM5052ZE 26dBm SSOP-16 FMM5052ZE FCSI0202M200 PDF