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    FDD7N25LZ Price and Stock

    onsemi FDD7N25LZTM

    MOSFET N-CH 250V 6.2A DPAK
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    DigiKey FDD7N25LZTM Reel 10,000 2,500
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    FDD7N25LZTM Cut Tape 39 1
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    FDD7N25LZTM Digi-Reel 1
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    Avnet Americas FDD7N25LZTM Reel 4 Weeks 1
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    FDD7N25LZTM Reel 16 Weeks 2,500
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    Mouser Electronics FDD7N25LZTM 18,713
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    Newark FDD7N25LZTM Cut Tape 7,230 5
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    FDD7N25LZTM Reel 2,500
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    RS FDD7N25LZTM Bulk 2 Weeks 10
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    Onlinecomponents.com FDD7N25LZTM
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    Richardson RFPD FDD7N25LZTM 2,500
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    Chip 1 Exchange FDD7N25LZTM 11,666
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    Avnet Asia FDD7N25LZTM 16 Weeks 2,500
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    Chip1Stop FDD7N25LZTM Cut Tape 2,500
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    EBV Elektronik FDD7N25LZTM 18 Weeks 2,500
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    New Advantage Corporation FDD7N25LZTM 10,000 1
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    Fairchild Semiconductor Corporation FDD7N25LZTM

    Power Field-Effect Transistor, 6.2A, 250V, 0.57ohm, N-Channel, MOSFET, TO-252AA
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    Rochester Electronics FDD7N25LZTM 375 1
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    Win Source Electronics FDD7N25LZTM 27,724
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    FDD7N25LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDD7N25LZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 6.2A DPAK-3 Original PDF

    FDD7N25LZ Datasheets Context Search

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    fdd7n25

    Abstract: fdd7n25lz
    Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD7N25LZ FDD7N25LZ fdd7n25

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS on = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A • Low Gate Charge ( Typ.12nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDD7N25LZ

    Untitled

    Abstract: No abstract text available
    Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD7N25LZ

    fdd7n25lz

    Abstract: fdd7n25
    Text: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS on = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD7N25LZ FDD7N25LZ fdd7n25

    fdd7n25

    Abstract: FDD7N25LZ
    Text: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description • RDS on = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS


    Original     		PDF FDD7N25LZ fdd7n25 FDD7N25LZ