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    FDI045N10A Search Results

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    FDI045N10A Price and Stock

    onsemi FDI045N10A-F102

    MOSFET N-CH 100V 120A I2PAK
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    DigiKey FDI045N10A-F102 Tube 1,080 1
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    Avnet Americas FDI045N10A-F102 Tube 17 Weeks 1,000
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    FDI045N10A-F102 Tube 17 Weeks 1,000
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    Mouser Electronics FDI045N10A-F102 2,000
    • 1 $4.35
    • 10 $4.23
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    Newark FDI045N10A-F102 Bulk 1,000
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    Onlinecomponents.com FDI045N10A-F102
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    Quest Components FDI045N10A-F102 57
    • 1 $4.4607
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    Richardson RFPD FDI045N10A-F102 1,000
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    Avnet Silica FDI045N10A-F102 18 Weeks 50
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    EBV Elektronik FDI045N10A-F102 19 Weeks 50
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    onsemi FDI045N10A

    MOSFET N-CH 100V 120A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDI045N10A Tube 50
    • 1 -
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    • 100 $2.4868
    • 1000 $2.4868
    • 10000 $2.4868
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    FDI045N10A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDI045N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF
    FDI045N10A_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF
    FDI045N10A-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A I2PAK-3 Original PDF

    FDI045N10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		PDF FDP045N10A FDI045N10A

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		PDF FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A

    FDP045N10A

    Abstract: FDI045N10A_F102
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has


    Original     		PDF FDP045N10A FDI045N10A FDI045N10A_F102