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    FDMC7680 Price and Stock

    onsemi FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey FDMC7680 Cut Tape 5,000 1
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    • 1000 $0.65442
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    FDMC7680 Digi-Reel 5,000 1
    • 1 $2.07
    • 10 $1.321
    • 100 $2.07
    • 1000 $0.65442
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    FDMC7680 Cut Tape 3,000 1
    • 1 $1.72
    • 10 $1.166
    • 100 $1.72
    • 1000 $0.62099
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    FDMC7680 Digi-Reel 3,000 1
    • 1 $1.72
    • 10 $1.166
    • 100 $1.72
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    FDMC7680 Reel 3,000 3,000
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    FDMC7680 Reel 3,000
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    Avnet Americas FDMC7680 Reel 0 Weeks, 2 Days 1,471
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    FDMC7680 Reel 18 Weeks 3,000
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    Mouser Electronics FDMC7680 2,024
    • 1 $1.85
    • 10 $1.23
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    Newark FDMC7680 Reel 3,000
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    Future Electronics FDMC7680 Reel 18 Weeks 3,000
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    Onlinecomponents.com FDMC7680
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    Rochester Electronics FDMC7680 9,000 1
    • 1 $0.636
    • 10 $0.636
    • 100 $0.5978
    • 1000 $0.5406
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    TME FDMC7680 1
    • 1 $1.15
    • 10 $1.04
    • 100 $0.83
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    Richardson RFPD FDMC7680 3,000
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    Avnet Asia FDMC7680 18 Weeks 3,000
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    Avnet Silica FDMC7680 19 Weeks 3,000
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    EBV Elektronik FDMC7680 20 Weeks 3,000
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    Flip Electronics FDMC7680 15,023
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    Rochester Electronics LLC FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey FDMC7680 Bulk 454
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    • 1000 $0.66
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    Fairchild Semiconductor Corporation FDMC7680

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    Bristol Electronics FDMC7680 2,598
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    Rochester Electronics FDMC7680 11,422 1
    • 1 $0.636
    • 10 $0.636
    • 100 $0.5978
    • 1000 $0.5406
    • 10000 $0.5406
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    FDMC7680 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC7680 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF

    FDMC7680 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDMC7680

    Abstract: MO-229 148 FSC
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 FDMC7680 MO-229 148 FSC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 FDMC7680 PDF

    FDMC7680

    Abstract: MO-229
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 FDMC7680 MO-229 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 PDF

    FDMC7680

    Abstract: MO-229
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 FDMC7680 MO-229 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    FDMC7680 PDF