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    FDMC86320 Search Results

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    FDMC86320 Price and Stock

    onsemi FDMC86320

    MOSFET N-CH 80V 10.7A/22A 8MLP
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    DigiKey FDMC86320 Digi-Reel 5,078 1
    • 1 $2.51
    • 10 $1.621
    • 100 $2.51
    • 1000 $0.82222
    • 10000 $0.82222
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    FDMC86320 Cut Tape 5,078 1
    • 1 $2.51
    • 10 $1.621
    • 100 $2.51
    • 1000 $0.82222
    • 10000 $0.82222
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    FDMC86320 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.75
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    Avnet Americas FDMC86320 Reel 15 Weeks 3,000
    • 1 -
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    • 10000 $0.723
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    Mouser Electronics FDMC86320 3,294
    • 1 $2.05
    • 10 $1.4
    • 100 $0.997
    • 1000 $0.761
    • 10000 $0.748
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    Newark FDMC86320 Reel 3,000
    • 1 -
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    • 10000 $0.9
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    Onlinecomponents.com FDMC86320
    • 1 -
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    • 1000 $1.56
    • 10000 $0.745
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    Rochester Electronics FDMC86320 30,837 1
    • 1 $0.8333
    • 10 $0.8333
    • 100 $0.7833
    • 1000 $0.7083
    • 10000 $0.7083
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    TME FDMC86320 1
    • 1 $1.63
    • 10 $1.37
    • 100 $1.07
    • 1000 $0.99
    • 10000 $0.99
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    Richardson RFPD FDMC86320 3,000
    • 1 -
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    • 10000 $0.75
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    Avnet Silica FDMC86320 16 Weeks 3,000
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    EBV Elektronik FDMC86320 17 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMC86320

    80 V, 22 A, 11.7 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA FDMC86320 715
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    FDMC86320 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86320 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 80V 10.7A 8-MLP Original PDF

    FDMC86320 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 FDMC86320 PDF