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    FDP020N06 Search Results

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    FDP020N06 Price and Stock

    onsemi FDP020N06B-F102

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey FDP020N06B-F102 Tube 1,615 1
    • 1 $4.37
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    • 100 $2.5574
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    Mouser Electronics FDP020N06B-F102 682
    • 1 $5.3
    • 10 $4.22
    • 100 $2.77
    • 1000 $2.7
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    Newark FDP020N06B-F102 Bulk 800
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    Onlinecomponents.com FDP020N06B-F102
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    Rochester Electronics FDP020N06B-F102 2,307 1
    • 1 $3.24
    • 10 $3.24
    • 100 $3.04
    • 1000 $2.75
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    Richardson RFPD FDP020N06B-F102 800
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    Avnet Silica FDP020N06B-F102 100 18 Weeks 50
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    EBV Elektronik FDP020N06B-F102 19 Weeks 50
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    New Advantage Corporation FDP020N06B-F102 250 1
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    Wuhan P&S FDP020N06B-F102 520 1
    • 1 $7.74
    • 10 $7.74
    • 100 $4.94
    • 1000 $3.75
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    onsemi FDP020N06B_F102

    Trans MOSFET N-CH 60V 313A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: FDP020N06B-F102)
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    Avnet Americas FDP020N06B_F102 Tube 17 Weeks 800
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    Fairchild Semiconductor Corporation FDP020N06B

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    Bristol Electronics FDP020N06B 200
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    Quest Components FDP020N06B 160
    • 1 $5.22
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    • 100 $3.219
    • 1000 $3.219
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    ComSIT USA FDP020N06B 90
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    Fairchild Semiconductor Corporation FDP020N06B_F102

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    Bristol Electronics FDP020N06B_F102 195
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    FDP020N06 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP020N06B_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO-220-3 Original PDF
    FDP020N06B-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO-220-3 Original PDF

    FDP020N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP020N06B N-Channel PowerTrench MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS on = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    PDF FDP020N06B

    FDP020N06

    Abstract: No abstract text available
    Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS on = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    PDF

    FDP020N06

    Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
    Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original
    PDF