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    Trans MOSFET N-CH 60V 21A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF320N06L)
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    FDPF320N06L Datasheets (1)

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    FDPF320N06L Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 21A TO-220F Original PDF

    FDPF320N06L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel Logic Level PowerTrench MOSFET 60 V, 21 A, 25 mΩ Features Description • RDS on = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDPF320N06L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description • RDS on = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    FDPF320N06L FDPF320N06L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25mΩ Features Description • RDS on = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A • RDS(on) = 23mΩ ( Typ.)@ VGS = 5V, ID = 17A • Low Gate Charge ( Typ. 23.2nC) This N-Channel MOSFET is produced using Fairchild


    Original
    FDPF320N06L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25mΩ Features Description • RDS on = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDPF320N06L FDPF320N06L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel PowerTrench MOSFET 60 V, 21 A, 25 mΩ Features Description • RDS on = 20 mΩ ( Typ.)@ VGS = 10 V, ID = 21 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    FDPF320N06L FDPF320N06L O-220F PDF