marking 724 diode
Abstract: sot-23 MARKING CODE 21 SB411D
Text: SB411D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FE Absolute Maximum Ratings Ta = 25OC
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SB411D
OT-23
500mA
marking 724 diode
sot-23 MARKING CODE 21
SB411D
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sot-23 MARKING CODE 21
Abstract: marking code fe SB41-1
Text: SB411D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FE Absolute Maximum Ratings Ta = 25OC
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SB411D
OT-23
500mA
sot-23 MARKING CODE 21
marking code fe
SB41-1
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Untitled
Abstract: No abstract text available
Text: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code
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DP500
DN500
KST-9091-003
-500m
-150m
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Untitled
Abstract: No abstract text available
Text: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE POWER TYPE RESISTORS ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING
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D-25578
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noise suppressor cap
Abstract: No abstract text available
Text: RESISTORS RESISTORS CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D Lc 1 2 3 Resistive body Metal Oxide composition Inner electrode silver layer End cap Fe (Ni or Sn plated) L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K Green* Red* Purple*
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D-25578
noise suppressor cap
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Untitled
Abstract: No abstract text available
Text: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K Green*
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D-25578
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motorbike
Abstract: noise suppressor
Text: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K
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noise suppressor cap
Abstract: No abstract text available
Text: RESISTORS RESISTORS CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D Lc 1 2 3 Resistive body Metal Oxide composition Inner electrode silver layer End cap Fe (Ni or Sn plated) L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1kΩ CPCN 5kΩ CPCN 10kΩ Green* Red*
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D-25578
noise suppressor cap
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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transistor marking 19P
Abstract: transistor wae
Text: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060
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OT-89
transistor marking 19P
transistor wae
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Marking Code 2F
Abstract: 250-600
Text: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300
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MMBT2222A
IMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
O-236
40min.
Marking Code 2F
250-600
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Untitled
Abstract: No abstract text available
Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
S35bQ5
Q133777
SQT-89
B535bQ5
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Untitled
Abstract: No abstract text available
Text: BSP 295 In fin e o n t«e h n o l o g i i t SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level * ‘'GS th = °-8 -20V Vbs fe BSP 295 50 V 1.8 A Type BSP 295 Ordering Code Q67000-S066 Type WDS(on) Package Marking 0.3 i l
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Q67000-S066
OT-223
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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DIODE S2v 73
Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Text: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w
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S2V20
S2V20
S2V60
DIODE S2v 73
DIODE in s2v
shindengen rectifier
SHINDENGEN DIODE
DIODE S2v 50
DIODE S2v
S2V60
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MTA-100
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 6 5 4 3 2 PUBLICATION RIGHTS LOC RESERVED. D IS T 00 CM BY TYCO ELECTRONICS CORPORATION. / \ MATERIAL: SOLDER cr D ALTERNATE CONFIGURATION P R E FE RR E D CONFIGURATION POSSIBLE MARKING
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31MAR2000
ECO-10-000443
13SEP07
15JAN10
UL94V-0
MTA-100
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DIODE S3V
Abstract: DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7
Text: r c r — K A x ia l D lo d * Sinote DfecUp ^MytäsOB Avatanche ty « ^ O U T L IN E DIM ENSIONS Cathode Anode S3VDZ 04 .8 M A X 600V 3.5A Color code, Cathode band Blue : S3V60Z Marking 7'<7'svi.& zm S3V 63 ¡.fe Type No. • f-X x Avalanche type (Silver
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S3V60Z
S3V60Z
400Hz
000ST5Ô
DIODE S3V
DIODE S3V 40
DIODE S3V 63
S3V Diode
DIODE S3V 7
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Untitled
Abstract: No abstract text available
Text: BSS 7728 In fin e o n technologies SIPMOS Small-Signal Transistor b • N channel 7 y SX/N. • Enhancement mode • '|/GS(tti = 1-°—2.5V 1 Pin 1 VPS05557 Pin 2 G Pin 3 S Type Vds fe f lDS(on) Package Marking BSS 7728 60 V 0.15 A 7.5 £1 SOT-23 sSJ
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VPS05557
OT-23
Q67000-S307
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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A1E transistor
Abstract: No abstract text available
Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107
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Q67000-S078
E6288
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A1E transistor
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BCX70RG
Abstract: BCX70RK BCX70RJ
Text: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb
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O-236)
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BCX70RG
BCX70RK
BCX70RJ
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964312-1
Abstract: No abstract text available
Text: CUSTOMER-PART Ku nde n -Te i I e MATERIAL MARKING Mafer ia lk en nze Ic hn u ng 'SPT ' 4,8mm MALE TERM, SINGLE-WIRE S E A T LOR SET 4 ^ M m \ d C S 2\ 1 . 5 mm \MALE\ T E R M ^ ^ T YCO- PA R T- NO, CONTACT BODY: 4 , 0 0 mmA2 \ \ 964314-1 Grundfeder: Cu Fe
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Untitled
Abstract: No abstract text available
Text: M O DEL IM C -1 2 1 0 -1 0 0 In d u c to rs S u rfa c e M ount, M olded FE A TU R ES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 2000/reel, EIA 481 • Printed marking • Compatible with vapor phase and infrared reflow soldering
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2000/reel,
010nH
-010flH
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Untitled
Abstract: No abstract text available
Text: BCR 119W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=4.7k£2 c FI 4 Tr Type Marking Ordering Code Pin Config uration BCR 119W WKs 1= B Q62702-C2285 Package 2= E 3=C SOT-323
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Q62702-C2285
OT-323
ec-05
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22ki2, R2=47kfl ire □ CÜ J S E Ordering Code Pin Configuration WZs Q62702-C2289 1 =B Package H CO ro
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22ki2,
47kfl)
Q62702-C2289
OT-323
Q120750
012Q751
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IBZ MARKING CODE
Abstract: No abstract text available
Text: MMBT3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MMBT3906 is recommended. •t lo, Top View "1 Pin configuration 1 = Collector, 2 = Base, 3 = Emitter, Marking code 1N LjA—i—
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MMBT3904
MMBT3906
OT-23
IBZ MARKING CODE
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