Untitled
Abstract: No abstract text available
Text: Si3000: 40 V Output Hi-Current H-Bridge Motor Driver Product Feature Sheet Features • Low input voltage range: 3 to 5 V • Wide output voltage range: 5 to 40 V • Bi-directional output drive current: 10 A maximum • PWM ouput driven with 5 V input for
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Si3000:
SI3000
Silicon360
SI2000,
68-lead
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.
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LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
LBC807
3000/Tape
LBC807-16LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G
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L2SA812
L2SC1623
L2SA812QLT1G
3000/Tape
L2SA812QLT3G
10000/Tape
L2SA812RLT1G
L2SA812RLT3G
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"Pin for Pin"
Abstract: 4422 datasheet LT1372 CS5171 CS5171ED8 CS5171GD8 CS5172 CS5172GD8 CS5173 CS5174
Text: NPFSCS5171/D Rev. 0, July-2000 New Product Fact Sheet CS5171/2/3/4 – Current-Mode Switching 1.5 A Boost Regulators Overview The CS5171, CS5172, CS5173 and CS5174 make up a family of space-saving, current-mode switching regulators that feature wide voltage inputs 2.7 V to 30 V and suppor t five popular boost
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NPFSCS5171/D
July-2000
CS5171/2/3/4
CS5171,
CS5172,
CS5173
CS5174
CS517x
r14525
"Pin for Pin"
4422 datasheet
LT1372
CS5171
CS5171ED8
CS5171GD8
CS5172
CS5172GD8
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION
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LBAS16HT1G
3000/Tape
LBAS16HT3G
10000/Tape
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ADM1073
Abstract: ADM1073ARU ADM1073ARU-REEL ADM1073ARU-REEL7 EVAL-ADM1073EB EVAL-ADM1073MEB RU-14
Text: Full-Feature −48 V Hot Swap Controller ADM1073 FEATURES FUNCTIONAL BLOCK DIAGRAM VIN SPLYGD PWRGD VCC AND REFERENCE GENERATOR OV OVERVOLTAGE DETECTOR UV UNDERVOLTAGE DETECTOR SS SOFT START CONTROL TIMER tON CONTROL FOLDBACK AND PWRGD DRAIN VIN 50µA 100mV MAX
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ADM1073
100mV
04488-PrG-001
ADM1073ARU
ADM1073ARU-REEL
ADM1073ARU-REEL7
EVAL-ADM1073EB
EVAL-ADM1073MEB
14-Lead
ADM1073
ADM1073ARU
ADM1073ARU-REEL
ADM1073ARU-REEL7
EVAL-ADM1073EB
EVAL-ADM1073MEB
RU-14
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg
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LBAS16WT1G
SC-70/SOT-323
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sck 103 thermistor
Abstract: X3100 sck 084 thermistor data Seven Transistor Array PNP 2N7000 CPH3101 X3101 VCELL12 6v battery overcharge protection
Text: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information Preliminary X3100/X3101 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software Selectable Protection Levels and Variable Protect Detection/Release Times
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X3100/X3101
sck 103 thermistor
X3100
sck 084 thermistor data
Seven Transistor Array PNP
2N7000
CPH3101
X3101
VCELL12
6v battery overcharge protection
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times • Integrated FET Drive Circuitry
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X3100
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sck 103 thermistor
Abstract: X3100 AN142 AN143 BAT54 Si4435 X3100V28 X3101 X3101V28 VCELL12
Text: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS 4 cell/3 cell 3 or 4 Cell Li-Ion Battery Protection and Monitor IC X3100/X3101 FEATURE • Software Selectable Protection Levels and Variable Protect Detection/Release Times • Integrated FET Drive Circuitry
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X3100/X3101
sck 103 thermistor
X3100
AN142
AN143
BAT54
Si4435
X3100V28
X3101
X3101V28
VCELL12
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X3100
Abstract: No abstract text available
Text: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information Preliminary X3100/X3101 4 cell / 3 cell 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software Selectable Protection Levels and Variable Protect Detection/Release Times
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X3100/X3101
X3100
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VcS21
Abstract: X3100 2N3906 2N7002 BAT54 Si4435 X3101 VCELL12
Text: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information Preliminary X3100/X3101 4 cell / 3 cell 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software Selectable Protection Levels and Variable Protect Detection/Release Times
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X3100/X3101
VcS21
X3100
2N3906
2N7002
BAT54
Si4435
X3101
VCELL12
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE LE AVAILAB MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage
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MAX14606/MAX14607
MAX14606/MAX14607
MAX14606)
MAX14607)
MAX14606
/MAX14607
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE LE AVAILAB MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage
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MAX14606/MAX14607
MAX14606/MAX14607
MAX14606)
MAX14607)
MAX14606
/MAX14607
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage
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MAX14606/MAX14607
MAX14606/MAX14607
MAX14606)
MAX14607)
MAX14606
/MAX14607
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MAX6880
Abstract: No abstract text available
Text: 19-3772; Rev 1; 10/05 Dual-/Triple-Voltage, Power-Supply Sequencers/Supervisors Applications Multivoltage Systems Networking Systems Telecom ♦ Capacitor-Adjustable Power-Up Sequencing Delay ♦ Internal Charge Pumps to Enhance External n-Channel FETs ♦ Capacitor-Adjustable Timeout Period Power-Good
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MAX6880/MAX6882)
24-Pin
16-Pin
MAX6880ETG+
MAX6880â
MAX6883
MAX6880
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MAX6880
Abstract: MAX6880ETG MAX6881ETE MAX6882ETE MAX6883 MAX6883ETE
Text: 19-3772; Rev 1; 10/05 Dual-/Triple-Voltage, Power-Supply Sequencers/Supervisors Applications Multivoltage Systems Networking Systems Telecom ♦ Internal Charge Pumps to Enhance External n-Channel FETs ♦ Capacitor-Adjustable Timeout Period Power-Good Output MAX6880/MAX6882
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MAX6880/MAX6882)
24-Pin
16-Pin
MAX6880ETG+
T2444-4
MAX6881ETE+
MAX6880
MAX6883
MAX6880ETG
MAX6881ETE
MAX6882ETE
MAX6883
MAX6883ETE
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Untitled
Abstract: No abstract text available
Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.
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BSV78
Abstract: No abstract text available
Text: BSV78 to 80 J V N-CHANNEL FETS Silicon symmetrical n-channel junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for switching applications. The devices have the feature: low 'on' resistance at zero gate voltage.
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BSV78
BSV78
BSV79
BSV80
v05s1
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J175
Abstract: J174 J176 J177
Text: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.
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M89-1045/RC
J175
J174
J176
J177
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MAX620cpn
Abstract: No abstract text available
Text: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a
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MAX620/MAX621
5fl7bb51
GG1344S
MAX620cpn
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3W11
Abstract: SA51 snubber full bridge
Text: H/ BRIDGE M OTOR DRIVER/ AM P U R ER SA51 h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • LCWOOST COMPLETE H- BRIDGE • SB.F-OONTAINHD SMART LCM/9DE HI GH9DE DRIVE 0 RQUI "TRY • SINGLE SUPPLY CPBWT1 ON • WIDE SUPPLY RANGE UP TO 80 V
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Untitled
Abstract: No abstract text available
Text: MAX IM I N T E G R A T E D P R O D U C T S 41E D • Sfi7bbSl 0 0 0 4 1 ^ 4 fl ■ MXH - f - s z - V '7 >1/1>JXI >2/1 19-4325; Rev 0,7/91 Quad, High-Side MOSFET Drivers The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability. This lockout
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MAX620/MAX621
urrent-70
00Q4204
MAX620/MAX621
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X3100
Abstract: No abstract text available
Text: A p p l i c a t io n N o t e A V A I L A B L E \ 3 or 4 Cell Li-Ion BATTERY PACKS P relim in ary Inform ation XI €01 X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times
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X3100
X3100
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