ADSP-21msp50
Abstract: AD6522 MSP430 gsm AD20MSP430 d6522 vco gsm of GSM sim 300 AD6521
Text: AD20msp430 SoftFoneTM GSM/GPRS Chipset AD20msp430-CDROM -Feb2000-Slide 1 Global System for Mobile Communication -The Standard that Sets the Standard 557 467 500 Million subscribers 400 280 210 300 200 377 36 1 S AI M TD one A M CD 132 100 AMPS 1998 1999 Million GSM Shipments
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AD20msp430
AD20msp430-CDROM
-Feb2000-Slide
AD6522
AD6521
ADSP-21msp50
AD6522
MSP430 gsm
d6522
vco gsm
of GSM sim 300
AD6521
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MPC740
Abstract: MPC7400 MPC7410 MPC7441 MPC745 MPC750 MPC755 MPC8240 MPC8241 MPC8245
Text: Motorola Host and Integrated Processor Summary revised FEB2003 755 7400 7410 7441 7450/1 7445 7455 100-133 MHz 603e 200-300 MHz 200-250 MHz 166-200 MHz 266-400 MHz 200-266 MHz 300-333 MHz 300-350 MHz 200-266 MHz 300-400 MHz 300-450 MHz 350-500 MHz 400-550 MHz
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FEB2003
600-1000MHz
603ePID6
603ePID7t,
MPC8240
MPC8241
MPC8245
MPC740
MPC745
MPC7400
MPC7410
MPC7441
MPC745
MPC750
MPC755
MPC8240
MPC8241
MPC8245
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VND1NV04TR-E
Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation
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VND1NV04
VNN1NV04
VNS1NV04
O-252
OT-223
VND1NV04,
VNN1NV04,
VNS1NV04
VND1NV04TR-E
Power MOSFET SOT-223
VND1NV04-E
min33
OMNIFET
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MBRB20H100CT
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MBRB20H100CT REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBRB20H100CT
300us
MBRB20H100CT
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B1100LB
Abstract: B170LB B180LB B190LB
Text: LITE-ON SEMICONDUCTOR B170LB thru B1100LB REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction
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B170LB
B1100LB
300us
B1100LB
B180LB
B190LB
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B140HB
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B140HB REVERSE VOLTAGE - 40 Volts FORWARD CURRENT- 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop
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B140HB
300us
Feb-2005,
KSHB06
B140HB
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SBC560
Abstract: JESD-51
Text: SBC560 REVERSE VOLTAGE – 60Volts FORWARD CURRENT – 5 Amperes SCHOTTKY BARRIER RECTIFIER FEATURES TO-126F • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF
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SBC560
60Volts
O-126F
SBC560
JESD-51
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STPR2020CTW
Abstract: JESD22-A114
Text: LITE-ON SEMICONDUCTOR STPR2020CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability
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STPR2020CTW
O-220AB
O-220AB
J-STD-020C
300us
STPR2020CTW
JESD22-A114
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STPF1020
Abstract: STPF1020CT 1020ct
Text: LITE-ON SEMICONDUCTOR STPF1010CT thru 1020CT REVERSE VOLTAGE - 100 to 200 Volts FORWARD CURRENT - 10 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS ITO-220AB FEATURES B M DIM. K A D PIN 2 3 E 1 MECHANICAL DATA J F G I Case : ITO-220AB molded plastic Polarity : As marked on the body
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STPF1010CT
1020CT
ITO-220AB
ITO-220AB
Feb-2005,
KTGC18
STPF1020
STPF1020CT
1020ct
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1N5819WL
Abstract: J-STD-020D
Text: 1N5819WL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Surge Capability and High Current Capability • For Surface Mounted Applications • High Conductance
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1N5819WL
OD-123
OD-123
J-STD-020D
2002/95/EC
180/W
1N5819WL
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR S12M8-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ High Surge Current Capability - 100 Amperes
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S12M8-B
O-220AB
O220AB
O-220AB
Feb-2005,
KTXC18
S12M15-B
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR STPR1620CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 16 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability
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STPR1620CTW
O-220AB
O-220AB
300us
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stpra1020
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR STPRA1020CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 10 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability
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STPRA1020CTW
O-220AB
O-220AB
300us
stpra1020
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃
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S12M8-600B
O-220AB
O220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and
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L30ESDL5V0C3-1
L30ESDL5V0C3-1
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Untitled
Abstract: No abstract text available
Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •
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VND1NV04
VNN1NV04
VNS1NV04
O-252
VND1NV04,
VNN1NV04,
VNS1NV04
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NCP1200D60
Abstract: NCP1200P60 optocoupler spice model ncp12000 NCP1200P100 optocoupler spice 4422 mosfet so-8 NCP1200D1 ncp1200D6 NCP1200P40
Text: NPFSNCP1200/D Rev. 0, Feb-2001 New Product Fact Sheet NCP1200 – PWM Current-Mode Controller for Low Power Universal Off-Line Supplies Overview The NCP1200 is a high per formance off-line controller that simplifies adapter and auxiliary power supply design. The circuit’s novel approach allows
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NPFSNCP1200/D
Feb-2001
NCP1200
NCP1200
r14525
NCP1200D60
NCP1200P60
optocoupler spice model
ncp12000
NCP1200P100
optocoupler spice
4422 mosfet so-8
NCP1200D1
ncp1200D6
NCP1200P40
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40898
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 1 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR DESCRIPTION REV PER DATE EC-0S14 - 0 4 9 6 - 0 4 DWN 0 1 FEB2005 GA JL D ZINC PER 2\ PTFE PER 3\ PHOSPHOR
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31MAR2000
EC-0S14-0496-04
01FEB2005
QQ-Z-363.
QQ-B-750.
ASTM-B-545,
MIL-G-45204,
40898
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QQ-B-262
Abstract: MIL-C-26074
Text: 4 THIS DRAWING IS UN PUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - LOC A LL RIGHTS RESERVED. AJ R E VIS IO N S DIST 17 DESCRIPTION REV PER E C - 0 S 1 4 - 0 4 9 6 - 0 4 0 1 FEB2005 GA JGH MATERIALS: BODY LEG : ZINC ALLOY (ZAMAK 3).
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EC-0S14-0496-04
01FEB2005
QQ-B-262.
MIL-G-45204.
ASTM-B-545.
MIL-C-26074.
QQ-N-290.
MIL-C-39012.
QQ-B-262
MIL-C-26074
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION DWN DATE R E V I S E D PER 0 G 3 B - 0 I 1 9 - 0 1 APVD EZ 0 I FEB2002 5. 0 ± 0 . 0 5 6 . 6 ± 0 .2
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IFEB2002
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION DWN DATE R E V I S E D PER 0 G 3 B - 0 I 19-01 APVD EZ 0 I FEB2002 5 . 0 ± 0 .05 6 . 6 ± 0 .2
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IFEB2002
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ASTMD1710
Abstract: QQB-626
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. DIST AJ R E VIS IO N S 6 LTR DESCRIPTION REV PER DATE EC-OS1 4 - 0 4 9 6 - 0 4 DWN 0 1 FEB2005 APVD GA JGH _3 . 9 4 + 0 . 3 8 1
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EC-0S14-0496-04
01FEB2005
QQ-B-626
ASTM-D-1710
MIL-G-45204
ASTM-B-545
QQ-N-290
MIL-C-39012
ASTMD1710
QQB-626
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR DESCRIPTION REV PER EC-0514-0496-04 DATE DWN APVD 0 1 FEB2005 AF JL D D SEE 018.29 [-720] SHEET 2491-1
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EC-0S14-0496-04
01FEB2005
RG-213/U
RG-58/U
58B/U
58C/U
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR P U B L IC A T IO N LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR A DATE DWN APVD 15M A R 2007 DW JL DESCRIPTION REV PER ECO 0 7 - 0 0 6 1 3 1 D D C C ±0.254[.0 1O]
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QQ-Z-363.
QQ-B-750.
ASTM-B-545,
FEB2005
FEB2005
31MAR2000
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