Untitled
Abstract: No abstract text available
Text: . S-D r e v is io n » • . > . i ' W £-&!£/r a * v-i- $ /e^c /sc/tiiydAOKU- Z\ NOV73 . c w - I 3 3 I C T ,V 2 C > 3 2 3 ^ . / J . ¿ ? A /‘ - t . t f 3 A P CM KH A v C A 8 Z342C * C /~ J O @ O' 0 ' C» » * « » » y ¿ /s ~ W Y S Z . 352/3C 23 FEB94
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Z342C
352/3C
FEB94
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Untitled
Abstract: No abstract text available
Text: NOTES: FINISH PLATING THIC K N E S S MICRO-INCHES MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER, GOLD PLATING INSULATOR - PTFE ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E U E N C Y R A N G E : D C 0 - 1 0 G H z
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903-369P-5IA
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for
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HYM540A400
40-blt
HY5116400
HYM540A400M/LM/TM/LTM
HYM540A400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM540400TM/TMG
1CE08-01-FEB94
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Untitled
Abstract: No abstract text available
Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for
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HYM591600
HY5116100
HYM591600M/LM/TM/LTM
HYM591600M/LM
1-781MIN.
HYM591600TM/LTM
0-05f1
76MIN.
03IMIN.
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Untitled
Abstract: No abstract text available
Text: DRAWING MADE IH THIRD ANGLE PROJECTION T H IS DRAWING IS U N P U B L IS H E D . @ D COP W IG H T T9 AMP P A R T NO 0Y M A T E R IA L INCORPORATED. PKG TYPE OTY BOX 25 or s t REVISIONS 74 A L L INTERNATIONAL RIGHTS RESERVED. ZONE LTR D ESCRIPTIO N DATE REVISED & REDRAWN PER 0 7 2 0 -0 0 3 7 -9 3
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LR7789
S/24/93
B-752
50LI5TRAND
FEB-94
fi26463_
Les/deefU23/du<
l23/u
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87631-2
Abstract: 87631-4 87631-6
Text: 7 THIS DRAWING IS UNPUBLISHED. 87631 COPYRIGHT 6 5 4 3 2 87631 ,87631 RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S LOC D IS T AD 00 LTR W1 0.00 0.00 ”A M P ”, P A R T NO. & DATE REVISED PER
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21AUG08
D4066.
87631-2
87631-4
87631-6
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Untitled
Abstract: No abstract text available
Text: 4 PPOJSCTJON THIS DRAWING IS UNPUBLISHED. COPVEfSHr 16 OPAWIMS wot IN thiwd an sls RELEASED FOR PU BLICATIO N •Y AMP INCONPOSATEO* LOC ,1 9 OIST G ALL INTERNATIONAL RIGHTS RESERVED. 14 REVISIO NS P P ZONE LTR A DATE description REVISED PER 0 7 2 0 -0 2 3 0 -9 3
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LR7189
-FEB-94_
qEg264Â
ies/deQtl123/djpq]
J23/u
0007OOJ
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Untitled
Abstract: No abstract text available
Text: RMP TRENDS CUMULATIVE DATA 0.30% 10 0.24% 8 0.18% 6 0.12% 4 O/L Fits 60% Cf I/L % Def 90% Cf DS1000 125°C, 7.0 V Op. Life, 1000 hrs Inf. Life, 48 hrs 0.06% 0.00% Jan-95 2 Mar-95 May-95 Jul-95 Sep-95 Nov-95 CUMULATIVE DATA DS1232 125°C, 7.0 V 0.60% 20 Op. Life, 1000 hrs
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DS1000
Jan-95
Mar-95
May-95
Jul-95
Sep-95
Nov-95
DS1232
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u 3843
Abstract: 79005 260J MIL-T-10727 22-I8
Text: A o*A*tm mot m thiho T H IS O R A WIN O IS — ojiction U N P U B LIS H E D . coPvftJiMr it PLEA SED 9Y AH P FO R IliCOWPOtMTKO. LOG ,1 9 P U B LIC A T IO N OIST 74 ALL INTCRNATfONAL ÄIONT* AEMftVED. R E V IS IO N S ZONE OATS 2/38/9#^ OAP oescRfprioN LTR
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CIN0JC03
65mm2
fS09-3
B-152
MIL-T-10727
fEB-94_
u 3843
79005
260J
MIL-T-10727
22-I8
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling
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36-blt
HYM536100A
36-bit
HY514400A
HY531000A
22fiF
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
4b75DÃ
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G1994
Abstract: HYM532100AM rx-5ca
Text: • HYUNDAI HYM532100A M-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for each DRAM.
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HYM532100A
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
DQ0-DQ31)
1CC03-01-FEB94
HYM5321OOA
G1994
HYM532100AM
rx-5ca
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