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    FERRANTI TRANSISTOR Search Results

    FERRANTI TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FERRANTI TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2223

    Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
    Text: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to


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    2N2060 BS9300 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 Ferranti Semiconductors "dual TRANSISTORs" C479 ZDT40 ZDT41 PDF

    N222

    Abstract: 2N2060 2N2223 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT41 ZDT42 ZDT44 ZDT45
    Text: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a c u sto m -b u ild e n gineering


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    2N2060 BS9300C479 ZDT45 N2060 2N2223 N2223A ZDT40 ZDT41 ZDT42 ZDT44 N222 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT41 PDF

    Ferranti ZN435

    Abstract: 3sm7 Ferranti ZN435E ADC tracking tracking -ADC FERRANTI ELECTRIC LM311 ZN435J function generator using LM311
    Text: FERRANTI ELECTRIC INC TS 3547860 FERRANTI DeT|3S47fibO DDOSTO? fl f ELECTRIC INC 95D 05907 D 7 '5 7 '/< ^ ' fo 8-bit multifunction data converter ZN435E ZN435J FEATURES • Multimode device operates as: -D A C -A D C -Tracking A D C - Voltage to frequency converter


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    ZN435E ZN435J 800ns ZN435 3S47fltiO Ferranti ZN435 3sm7 Ferranti ADC tracking tracking -ADC FERRANTI ELECTRIC LM311 ZN435J function generator using LM311 PDF

    8078 microprocessor pin diagram

    Abstract: 3s4 ZENER DIODE ferranti 3sm7 sk 8060 8K21 ZN439E-7 3S47 47MF ZIM439
    Text: FERRANTI ELECTRIC IN C TS D E § 3 S 47ñbO 3547860 FERRANTI E L E C T R I C INC □OObDD? 95D 06007 8-bit jitP compatible A-D converter D ZN 439 Series ADVANCE PRODUCT INFORMATION FEATURES DESCRIPTION • The ZN439 is an 8-bit successive approximation A-D converter designed to be easily interfaced


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    ZIM439 /4LSB-ZN439-9, ViLSB-ZN439-8, 1LSB-ZN439-7 ZN439 3547flbD ZN439E-9 ZN439J-9 ZN439E-8 8078 microprocessor pin diagram 3s4 ZENER DIODE ferranti 3sm7 sk 8060 8K21 ZN439E-7 3S47 47MF PDF

    ferranti

    Abstract: MPSA42 MPSA43 Ferranti Semiconductors
    Text: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    MPSA42 MPSA43 O-5/39 100/iA, 20MHz ferranti MPSA43 Ferranti Semiconductors PDF

    Ferranti Semiconductors

    Abstract: MPSA42 MPSA43 ferranti se17
    Text: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    MPSA42 MPSA43 O-5/39 MPSA43 Ferranti Semiconductors ferranti se17 PDF

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors PDF

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


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    RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A PDF

    ZTX454

    Abstract: ZTX455 ferranti Scans-00107852 Ferranti Semiconductors
    Text: FERRANTI i semiœnductors ZTX454 ZTX455 NPN Silicon Planar M edium Power Transistors DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: Audio Frequency Amplifiers, Drivers


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    ZTX454 ZTX455 ZTX454 150mA 200mA 100MHz ZTX455 ferranti Scans-00107852 Ferranti Semiconductors PDF

    BCW70R

    Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
    Text: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices


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    BCW69 BCW70 BCW71 BCW72. OT-23 BCW69 BCW70 FMMT5087 BCW70R general purpose complementary transistors 1a 50v scw71 BCW69R BCW72 BFQ31 5P sot23 PDF

    transistor JSW

    Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
    Text: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power


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    ZTX449 ZTX449 100mA 100ms transistor JSW transistor JSW 12 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26 PDF

    bf493

    Abstract: BF492 BF491 ferranti
    Text: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE


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    BF491 BF492 BF493 O-5/39 ParamF491 -160V, BF492 -200V, bf493 ferranti PDF

    BF393

    Abstract: ferranti BF391 BF392
    Text: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE


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    BF391 BF392 BF393 O-5/39 BF393 ferranti PDF

    BF493

    Abstract: Ferranti Semiconductors BF492 BF491 ferranti
    Text: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE


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    BF491 BF492 BF493 O-5/39 BF493 Ferranti Semiconductors ferranti PDF

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


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    OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR PDF

    BCW66

    Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
    Text: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices


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    BCW65 BCW66 BCW67 BCW68. OT-23 BCW66 BCW65/66, BCW65/66 transistor EH sot-23 BCW65A BCW65B BCW66F BCW68 ferranti BCW66H PDF

    2222a sot23

    Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
    Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.


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    FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 BCW29 BFQ31 PDF

    BCW71K1

    Abstract: BCW72R-K5 BCW71 BFQ31 BCW71R BCV72 Ferranti Semiconductors BCW69 BCW72 BCW72R
    Text: I FERRANTI BCW71 BCW72 T IIsemiconductors L NPN S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r low level, general purpose applications. Com plem entary to the BCW 69 and BCW7Q. Encapsulated in the popular SOT-23 package these devices


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    BCW71 BCW72 BCW69 OT-23 FMMT5087 BCW70 BCX71G BCX71H BCW71K1 BCW72R-K5 BFQ31 BCW71R BCV72 Ferranti Semiconductors BCW72 BCW72R PDF

    BCW60

    Abstract: transistor ad 1v hFE Group ferranti BCW60A BCW60B BCW60C BCW60D FERRANTI ZS Scans-0010382
    Text: FERRANTI k semiconductors BCW60 N P N Silicon Planar Small Signal Transistor DESCRIPTION These devices are intended fo r use in low level a m plifica ­ tion, low level sw itching and low noise applications. Encapsulated in the popular SOT-23 package these devices


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    BCW60 OT-23 BCW60 BCW60, BCW60A BCW60B BCW60C transistor ad 1v hFE Group ferranti BCW60D FERRANTI ZS Scans-0010382 PDF

    ferranti

    Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
    Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching


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    ZTX600 ZTX601 ZTX601 100mA 100mA ferranti Scans-00107859 Ferranti Semiconductors PDF

    PSA92

    Abstract: SE21 mpsa92 MPSA93 SE19 SE20 ferranti
    Text: 4 FERRANTI semiconductors MPSA92 MPSA 93 PNP S ilicon Planar H igh Voltage Transistors G EN ER A L D ESCRIPTIO N These plastic encapsulated, general purpose tran sis­ tors are designed for applications requiring high break­ down voltages, low saturation voltages and low


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    PSA92 MPSA93 T0-5/39 SE21 mpsa92 MPSA93 SE19 SE20 ferranti PDF

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


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    FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n PDF

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


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    BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23 PDF

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


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    BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2 PDF