MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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BSW43
BSX52
MMBT41ran
MRF472
MRF245
MRF243
MPSA13K
MPS6579
MRF420
BF497
MRF304
MRF250
PE210B
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2N50b
Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A
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BFW83
2SC997
2N50B2
2SC3122
BFW64
NR421DE
NR421DF
BF260
BF261
2N50b
BCY5B
2SC307B
DIODE bon
BCW60RD
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2SC1018
Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252
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2S01280
2SC1568
2SC1518
ZTX449
2S01664
2S01225M
2SC1018
sk3024
2S01526
2N3925
2N3818
2S01005
bly14
PTC144
2N3718
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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MRF212
Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413
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OT-161
92var
StR-10
OT-123var
O-220
MRF212
b0507
MRF221
motorola diode
b0106A
B12 nec diode
2sc94
2n5861
2N4127
MRF603
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bvc49
Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)
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2S01111
2S01198A
2S0946A
MPS6725
2SC3985
2S01661M
2S01521
92PU45A
2N6725
bvc49
TIPP110
FMMT388
U2TA506
BSR51
SE1001
2N2724
2S0152
transistor* SE1001
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2N2369 SOT-23
Abstract: nec RF package SOT89 2SC934 BSX26 2N5180 2SC389 BFY63 s0918 BSX87 2SC288A
Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 >= Manufacturer V(BR)CEO fT (V) (Hz) hFE 15 15 15 15 15 15 15 15 15 15 500M 500M 500M 500M 500M 500M 500M 500M 500M 500M 40 40 40 40 40 40 40
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2SC3735
BFR54
BSX20
PH2369
ZTX313
ZTX314
2N2369
2SC389
2N2369 SOT-23
nec RF package SOT89
2SC934
BSX26
2N5180
BFY63
s0918
BSX87
2SC288A
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rca 101m
Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50
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2SC458K
2N3856A
BC383L
MPS3707
BC223A
BC232A
BC223
rca 101m
Delco
2N1522
2n1543
2n1518
2n1564
2SC968
2N1553
2n1457
ED-1402
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
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ZTX454
Abstract: ZTX455 ferranti Scans-00107852 Ferranti Semiconductors
Text: FERRANTI i semiœnductors ZTX454 ZTX455 NPN Silicon Planar M edium Power Transistors DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: Audio Frequency Amplifiers, Drivers
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ZTX454
ZTX455
ZTX454
150mA
200mA
100MHz
ZTX455
ferranti
Scans-00107852
Ferranti Semiconductors
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transistor JSW
Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
Text: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power
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ZTX449
ZTX449
100mA
100ms
transistor JSW
transistor JSW 12
high power amp 100mhz 1w
ferranti
JSW 70
transistor HFE 400 1w
Scans-00107847
jsw transistor
SE26
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ferranti
Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching
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ZTX600
ZTX601
ZTX601
100mA
100mA
ferranti
Scans-00107859
Ferranti Semiconductors
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ZTX650
Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
Text: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages
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ZTX650
ZTX651
ZTX652
ZTX653
100ms
605A
transistor a7n
100-C
ZTX653
ferranti
Scans-00107862
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ZTX750
Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts
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ZTX750
ZTX751
ZTX752
ZTX753
100mA
100ms
ZTX650
100-C
ZTX753
ferranti
c6011
ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES
SE74
|
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ztx550
Abstract: SE42 F144 ZTX551 ztx450 ztx550 F143 F145 F146 ZTX450 ZTX451
Text: FERRANTI semiconductors ZTX550 ZTX551 PNP Silicon Planar M e d iu m Power Transistors FEATURES • High pow er dissipation: 1W a t T amb= 25°C • hFE specified up to 1 Amp • High f T : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors
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ZTX550
ZTX551
ZTX550/551
-10mA
-100mA
-10mA.
SE42
F144
ZTX551
ztx450 ztx550
F143
F145
F146
ZTX450
ZTX451
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ZTX753
Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts
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ZTX750
ZTX751
ZTX752
ZTX753
100mA
100ms
ZTX753
ZTX650
6.8j 100v
Scans-00107864
c6011
Ferranti Semiconductors
SE74
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ZTX650
Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
Text: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts
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ZTX650
ZTX651
ZTX652
ZTX653
100ms
FERRANTI
SE60
transistor a7n
ZTX653
Scans-00107861
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2TX451
Abstract: ztx450 oms 450 Q 451 ztx450 ztx550 ZTX550 F137 F139 ZTX451 ZTX551
Text: FERRANTI semiconductors ZTX450 ZTX451 NPN Si li co n Planar M e d i u m P o w e r Transistors FEATURES • High pow er dissipation: 1W a t Tarnb= 25°C • hFE specified up to 1 Amp • High fT : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors
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ZTX450
ZTX451
ZTX45
ZTX450/451
100mA
2TX451
oms 450
Q 451
ztx450 ztx550
ZTX550
F137
F139
ZTX451
ZTX551
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ZTX453
Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Text: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis
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PDF
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ZTX452
ZTX453
ZTX453
ZTX 15
Ferranti Semiconductors
ZT Ferranti
ferranti
NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
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DL701
Abstract: DL707 transistor ZTX108 application dual slope DVM decodar ZN424 ZN424E Ferranti Semiconductors ferranti TRANSISTOR S1d
Text: *FERRANTI semiconductors Low Power 3 ZNA116E D ¡q it D . V . M . I n t e o r a t e d C i r c u i t FEA TU R ES • • • • • • • • • 3 | Decade display ±1999 max. reading Autom atic polarity detection and indication Leading zero suppression
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ZNA116E
ZNA7447A)
ZNA116E
DL701
DL707
transistor ZTX108
application dual slope DVM
decodar
ZN424
ZN424E
Ferranti Semiconductors
ferranti
TRANSISTOR S1d
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2n222a
Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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ZT1480
ZT1482
ZT1484
ZT1486
ZT1488
ZT1490
2N3055
2N3439
2N3440
2N3441
2n222a
ZS106
2n222a npn transistor
ZS90
N2222
2N2223
transistor 2n222a
n3055
ZS132
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2n222 TRANSISTOR
Abstract: N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 ZT1482
Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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ZT1480
ZT1482
ZT1484
ZT1486
ZT1488
ZT1490
2N3055
2N3439
2N3440
2N3441
2n222 TRANSISTOR
N2222
2n222a
transistor 2n222a
2n222A TRANSISTOR
n3055
2n222a npn transistor
2N222-A
2N222
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ZTX313
Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
Text: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a
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O-5/39
8-Munich-22,
ZTX313
BSV26
ZTX314
BSV27
ZTX312
2TX313
ferranti
FERRANTI ELECTRONICS
BSV25
ZTX310
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ZTX107
Abstract: ferranti ula ZTX109 ZTX108 ZTX107B BC107 plastic ZTX108C ZTX107A FERRANTI ELECTRONICS replacement ztx108
Text: D 6 S C „ ,P T ,O N ¿ \ W f a Z These are plastic encapsulated general purpose transistors designed fo r small and m edium signal am p lific atio n s fro m d.c. to radio freq uencies. A p p lic atio n areas in clu d e : A udio Frequency A m p lifie rs ,
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O-5/39
8-Munich-22,
ZTX107
ferranti ula
ZTX109
ZTX108
ZTX107B
BC107 plastic
ZTX108C
ZTX107A
FERRANTI ELECTRONICS
replacement ztx108
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