SSOP-20
Abstract: AA260-85 AA260-85LF
Text: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features ● 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a
|
Original
|
AA260-85,
AA260-85LF:
AA260-85
SSOP-20
AA260-85LF
|
PDF
|
2DB25
Abstract: AA260-85LF
Text: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features ● 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a
|
Original
|
AA260-85,
AA260-85LF:
SSOP-20
J-STD-020
AA260-85
2DB25
AA260-85LF
|
PDF
|
SSOP20PIN
Abstract: No abstract text available
Text: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a
|
Original
|
AA260-85,
AA260-85LF:
SSOP-20
J-STD-020
AA260-85
SSOP20PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz EBAIpHa AK402D4-31 Features • 4 dB Bit Logic “0” at Insertion Loss ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption -20 mW per bit
|
OCR Scan
|
AK402D4-31
MIL-STD-883
AK402D4-31
AK002D4-31
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz ËSAIphi AK002D4-31 Features Designed for Military Applications 14 Lead Metal Surface Mount Package Low DC Power Consumption -20 mW Per Bit Integral Driver +5V, -5V, CMOS & TTL Compatible
|
OCR Scan
|
AK002D4-31
MIL-STD-883
AK402D4-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator ElAlpha With Driver 1,2,4,8 dB Bits DC-2 GHz AK002D4-31 Features • Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption -20 mW Per Bit ■ Integral Driver +5V, -5V, CMOS & TTL
|
OCR Scan
|
AK002D4-31
MIL-STD-883
AK402D4-31
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL
|
OCR Scan
|
AK002D2-24
AK002D4-24
AK002D2-24
D8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
|
PDF
|
AK002D2-24
Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK002D4-24 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL
|
OCR Scan
|
AK002D2-24
AK002D4-24
Accuracy04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
|
PDF
|
se 617
Abstract: No abstract text available
Text: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EEA lph a AK002D2-24 A Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL
|
OCR Scan
|
AK002D2-24
AK002D4-24
AK002D2-24
se 617
|
PDF
|
rf attenuator soic
Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Text: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .
|
OCR Scan
|
|
PDF
|
VNA-25 equivalent
Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features • 0.5 – 2.5 GHz • Single Voltage Supply • Internally matched to 50 ohms • Low variation of performance over temperature VNA-25+ VNA-25 + RoHS compliant in accordance
|
Original
|
VNA-25+
VNA-25
2002/95/EC)
IPC/JEDECJ-STD-020C
C/85RH
VNA-25 equivalent
414 monolithic amplifier
mcl-25 rf
5253 1007
VNA-25
marking f25
6635 fet
MCL 25
marking K gaas fet
|
PDF
|
16621
Abstract: 351 fet
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45A2527B
MGFS45A2527B
079MIN.
-45dBc
16621
351 fet
|
PDF
|
Band Power GaAs FET
Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45A2527B
MGFS45A2527B
Band Power GaAs FET
16621
high power FET transistor s-parameters
|
PDF
|
MwT1789HL
Abstract: solar schematic
Text: Application Notes MwT-1789HL DC-4 GHz Packaged FET June 2005 Application Circuit Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency Typical Data MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss
|
Original
|
MwT-1789HL
200mA,
wT-1789
MwT1789HL
solar schematic
|
PDF
|
|
|
MGFS45A2527B
Abstract: 16621
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45A2527B
MGFS45A2527B
079MIN.
16621
|
PDF
|
T1789
Abstract: FET application note 3435G
Text: MwT-1789HL DC-4 GHz Packaged FET Application Note June 2006 Application Circuit: Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss dB
|
Original
|
MwT-1789HL
200mA,
wT-1789
OT-89
T1789
FET application note
3435G
|
PDF
|
HMC216MS8
Abstract: DOUBLE FET
Text: MICROWAVE CORPORATION HMC216MS8 v01.0801 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB
|
Original
|
HMC216MS8
HMC216MS8
DOUBLE FET
|
PDF
|
HMC216MS8
Abstract: h216
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB
|
Original
|
HMC216MS8
216MS8E
HMC216MS8E
HMC216MS8
h216
|
PDF
|
H216
Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
Text: HMC216MS8 / 216MS8E v02.0705 7 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB
|
Original
|
HMC216MS8
216MS8E
HMC216MS8E
HMC216MS8
H216
gaas fet marking a
marking c gaas fet
216MS8E
|
PDF
|
HMC296MS8
Abstract: HMC296MS8E H296 FET MARKING
Text: HMC296MS8 / 296MS8E v03.0705 7 LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz Typical Applications Features The HMC296MS8 / HMC296MS8E is ideal for: IP3 Input : +24 dBm @ +11 dBm LO • Miniature Basestations LO Range = +3 to +11 dBm • PCMCIA Conversion Loss: 7 dB
|
Original
|
HMC296MS8
296MS8E
HMC296MS8E
HMC296MS8
H296
FET MARKING
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MGA-65100 Medium Power 2 Stage GaAs FET Cascade What LETT mUtim HEW PA C K AR D Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias
|
OCR Scan
|
MGA-65100
|
PDF
|
HMC296MS8
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC296MS8 v02.1201 LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz Typical Applications Features The HMC296MS8 is ideal for: IP3 Input : +24 dBm @ +11 dBm LO • Miniature Basestations LO Range = +3 to +11 dBm • PCMCIA Conversion Loss: 7 dB
|
Original
|
HMC296MS8
HMC296MS8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: data sheet 0A V A N T E K MGA-65100 Medium Power 2 Stage GaAs FET Cascade October, 1989 Features • • • • Avantek Chip Outline Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ¿b at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz
|
OCR Scan
|
MGA-65100
MGA-65100
ADS-1637/R-10-89
|
PDF
|
HMC216MS8
Abstract: No abstract text available
Text: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations
|
Original
|
HMC216MS8
216MS8E
HMC216MS8E
HMC216MS8
|
PDF
|
