Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting
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RQA0004LXAQS
R07DS0496EJ0200
REJ03G1567-0100)
PLZZ0004CA-A
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Untitled
Abstract: No abstract text available
Text: FLM7185-6 F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.0dBm Typ. • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% (Typ.) • Low IM3 = -45dBc@Po = 27.0dBm • Broad Band: 7.1 to 8.5GHz • Impedance Matched Zin/Zout = 50ohm
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FLM7185-6
-45dBc
50ohm
FLM7185-6F
25deg
25deatched
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1 Low drain-source On-state resistance : RDS on typ. = 26 m ( VGS = -4.5 V )
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TT4-EA-12484
FJ6K01010L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12408 Revision. 2 Product Standards MOS FET MTM78E2B0LBF MTM78E2B0LBF Gate Resistor installed Dual N-Channel MOS Type Unit: mm 2.0 For lithium-ion secondary battery protection circuit 0.2 8 7 6 5 1 2 3 4 1.7 2.1 • Features 0.13 Low drain-source On-state Resistance
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TT4-EA-12408
MTM78E2B0LBF
UL-94
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2n2369 avalanche
Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010
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2N1131
2N718A
2N1711
2N4949
5961-E084
5980-E011
5980-E010
5961-E087
5961-E079
2n2369 avalanche
2N7373
gc. marking
2N2222
2N2369
2N2432
2N2484
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PT100 xtr106
Abstract: variable xtr105 OPA544 ina125 0-10v OPA349 PT100 OPA68x cross reference guide PT100 AD620 PGA204 cmos opamp
Text: Selection Guide OPA 350 October ‘99 ADS1 124 VSP 200 Contents Instrumentation Amplifiers -INA + Packages DIP -8 High Precision INAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Programmable Gain INAs . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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400kHz,
DCP010505
DCP010512
DCP010515
DCP011512
DCP011515
DCP012405
DCP012415
ISO150
ISO508
PT100 xtr106
variable xtr105
OPA544
ina125 0-10v
OPA349 PT100
OPA68x
cross reference guide
PT100 AD620
PGA204
cmos opamp
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3152
Abstract: AN-154 TI-LVT16245
Text: 3.3 VOLT LOGIC CHARACTERISTICS AND APPLICATIONS APPLICATION NOTE AN-124 Integrated Device Technology, Inc. By Stanley Hronik INTRODUCTION TABLE OF CONTENTS To increase the performance and density of digital electronic systems while decreasing the power consumption,
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AN-124
FCT164245T
FCT16245T.
3152
AN-154
TI-LVT16245
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mos 4069
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
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RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Oct2011
mos 4069
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
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RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
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Band Power GaAs FET
Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
Band Power GaAs FET
16621
high power FET transistor s-parameters
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fet 30 f 124
Abstract: TIP 41 fet "GaAs FET" MGFC41V5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4
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MGFC41V5964
MGFC41V5964
50ohm
Item-51]
30dBm
June/2004
fet 30 f 124
TIP 41 fet
"GaAs FET"
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OPA111
Abstract: OPA124 OPA124P OPA124PA OPA124PB OPA124U OPA124UA 120-3C
Text: OPA124 OPA 124 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 6nV/√Hz 10kHz ● LOW BIAS CURRENT: 1pA max ● PRECISION PHOTODIODE PREAMP ● MEDICAL EQUIPMENT ● LOW OFFSET: 250µV max ● LOW DRIFT: 2µV/°C max
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OPA124
10kHz)
120dB
100dB
OPA124
OPA124.
OPA111
OPA124P
OPA124PA
OPA124PB
OPA124U
OPA124UA
120-3C
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OPA1244
Abstract: SBOA058 fet operational amplifier
Text: OPA124 OPA 124 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 6nV/√Hz 10kHz ● LOW BIAS CURRENT: 1pA max ● PRECISION PHOTODIODE PREAMP ● MEDICAL EQUIPMENT ● LOW OFFSET: 250µV max ● LOW DRIFT: 2µV/°C max
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OPA124
10kHz)
120dB
100dB
OPA124
OPA124,
UAF42
SBFC001,
SLVC003A,
OPA1244
SBOA058
fet operational amplifier
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MGFS45A2527B
Abstract: 16621
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
079MIN.
16621
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FET MARKING
Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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ELM5964-4PS
ELM5964-4PS
FET MARKING
ELM5964
Sumitomo elm5964
elm5964-4pst
elm5964-4
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Untitled
Abstract: No abstract text available
Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
CFK2062-P3
0000b74
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CFK2062-P3
Abstract: CFK2062-P3-000T pt 4115 FET 4953
Text: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
CFK2062-P3
CFK2062-P3-000T
pt 4115
FET 4953
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Untitled
Abstract: No abstract text available
Text: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P1
CFK2062-P1
30nintended
0000t
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Untitled
Abstract: No abstract text available
Text: 9 CFH2162-P1 A dvanced P ro d u ct Inform ation M a y 1996 1 o f 2 800 to 900 MHz +36 dBm Power GaAs FET Features □ High Gain □ +36 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +33 dBm with 30 dBc Third Order Products
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CFH2162-P1
CFH2162-P1
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BM125
Abstract: No abstract text available
Text: SMF-03300 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized Low Current G aAs FET 2-20 GHz Description Features The S M F-03300 is a 300 p.m n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s gain/low current optimized G 30 process. Ti/Pt/Au gate metallization
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SMF-03300
F-03300
BM125
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5N521
Abstract: CFY30
Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization
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Untitled
Abstract: No abstract text available
Text: ADE-208-257A Z PF0340A MOS FET Power Amplifier Module for UHF Band HITACHI Features Rev. 1 January 1995 Pin Arrangement •R F -J • Sm all package: 30 x 10 x 5.9 mm • High efficiency: 43% typ. at 9.6 V 40% typ. at 4.8 V 1: Pin • Low pow er control current: ! 5 0 p A ty p .
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ADE-208-257A
PF0340A
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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1241DD
18GHz
MwT-12
-F94-
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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