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    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    3205 FET

    Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz 3205 FET FET 3205 transistor c 3205 C 3205

    D1210UK

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    FET 3205

    Abstract: 3205 FET D1210UK
    Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz FET 3205 3205 FET

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz

    AN1081S

    Abstract: AN1081 1081S AN6583
    Text: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing


    OCR Scan     		PDF 1081S, AN6583 AN1081, AN1081S AN6583 1012n 106dB b13gfl5g 001E3bfl AN1081 1081S

    Tc-25-t

    Abstract: 2SK1330A 2SK1330 VJ640 U0-17 I32O
    Text: Power F-MOS FET 2SK1330, 2SK1330A 2SK1330, 2SK1330A Silicon N-Channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low R EB c,n = 1 . 3 i l (typ.) 5.2max. 15.5max. 6.9min. • High speed switching t(= 120ns (typ.) • Secondary breakdown free


    OCR Scan     		PDF 2SK1330, 2SK1330A 120ns 2SK1330 15-5max. VOO-200V Tc-25-t 2SK1330A VJ640 U0-17 I32O

    TL 1084

    Abstract: 2SK766 1084 fet
    Text: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 O-220 TL 1084 2SK766 1084 fet

    2SK766

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 0170fll 99Z5ISZ 2SK766

    2SK770

    Abstract: No abstract text available
    Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage


    OCR Scan     		PDF 2SK770 O-220 VDO-I50V 2SK770

    2SK1036

    Abstract: No abstract text available
    Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o


    OCR Scan     		PDF 2SK1036 O-220 D01713Ã 2SK1036

    2SK1331

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2


    OCR Scan     		PDF 2SK1331 100ns b132fi52 Q017174 2SK1331

    2SK1262

    Abstract: 2SK12
    Text: P o w er F-MOS FET 2SK 1262 2SK 1262 Silicon N-channel Power F-M O S FET • Package Dim ensions ■ Features • Low ON resistance R d s on : R Us (on) l = 0.048fl (typ.) • High switching ra te : tf = 190ns (typ.) Unit: mm • No secondary breakdow n


    OCR Scan     		PDF 2SK1262 048fl 190ns 2SK1262 2SK12

    2SK996

    Abstract: 1128A FET 1127
    Text: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax


    OCR Scan     		PDF 2SK996 171BS 001712b 2SK996 1128A FET 1127

    2SK981

    Abstract: 2SK981A
    Text: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n


    OCR Scan     		PDF 2SK981, 2SK981A 2SK981 2SK981A G017121

    2SK807

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R DS on : RDb (on) = l . l i l (typ.) • High switching ra te : tf= 7 0 n s (typ.) Unit: mm • No secondary breakdow n • High breakdow n voltage, large pow er


    OCR Scan     		PDF 2SK807 2SK807

    2SK1330

    Abstract: 2SK1330A
    Text: P o w er F-MOS FET 2SK1330, 2SK1330A 2S K 1330, 2S K 1330A Silicon N-Channel Power F-M OS FET • P ackage Dim ensions ■ Features • Low R rd on =1.3il (typ.) • High speed switching t(= 120ns (typ.) • Secondary breakdow n free • High breakdow n voltage, high pow er


    OCR Scan     		PDF 2SK1330, 2SK1330A 120ns 2SK1330 2SK1330A

    2SK757

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK 757 2SK757 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds Unit: mm (on) = 0 .2 2 il (typ.) • High sw itching ra te : tr= 6 0 n s (typ.) • No secondary breakdow n ■ Application


    OCR Scan     		PDF 2SK757 2SK757

    2SK765A

    Abstract: 2SK765
    Text: P o w e r F-MOS FET 2SK765, 2SK 765A 2SK765, 2SK765A Silicon N-channel Power F-MOS FET Package Dimensions • Features • • • • Low ON resistance R ds on : R Ds (on) = 0 .5ft (typ.) High switching rate : tf= 9 0n s (typ.) No secondary breakdown High breakdown voltage, large power


    OCR Scan     		PDF 2SK765, 2SK765A 2SK765 2SK765A --55----h D0170a0

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK796, 2SK796A 2SK796, 2SK796A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) = 3 . OH (ty p .) Unit: mm • High sw itch in g r a te : t f = 4 0 n s (ty p .) k 15._5max.


    OCR Scan     		PDF 2SK796, 2SK796A

    2SK1260

    Abstract: JI35
    Text: P o w er F-MOS FET 2SK1260 2S K 1260 Silicon N-channel Power F-M O S FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds (on) l = 0 .3 1 5 ii (typ.) Unit: mm • High switching rate : t f= 3 8 n s (typ.) • No secondary breakdown


    OCR Scan     		PDF 2SK1260 315ii 2SK1260 JI35

    2SK769

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package D im ensions ■ Features • L ow O N r e s is ta n c e Rui on : R Ds (on) = 0 ,6 5 il (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) 5.2max 15 5max


    OCR Scan     		PDF 2SK769 VDO-150V Tc-25C G0170Ã

    2SK1036

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK1036 29max