NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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MTB50P03HDL/D
MTB50P03HDL
MTB50P03HDL/D*
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AN569
Abstract: MTB50P03HDL SMD310 MOSFET sot-143
Text: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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MTB50P03HDL/D
MTB50P03HDL
AN569
MTB50P03HDL
SMD310
MOSFET sot-143
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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MTP50P03HDL
Abstract: AN569
Text: MOTOROLA Order this document by MTP50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP50P03HDL Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL
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MTP50P03HDL/D
MTP50P03HDL
MTP50P03HDL
AN569
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PHK31NQ03LT
Abstract: No abstract text available
Text: PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 18 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHK31NQ03LT
PHK31NQ03LT
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PSMN015-100
Abstract: PSMN015-100P
Text: PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN015-100P
PSMN015-100P
PSMN015-100
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110P2
Abstract: PSMN015-110P
Text: PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN015-110P
PSMN015-110P
110P2
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Untitled
Abstract: No abstract text available
Text: PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN015-100P
PSMN015-100P
771-PSMN015-100P127
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PSMN015-100B
Abstract: No abstract text available
Text: PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN015-100B
PSMN015-100B
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PHK31NQ03LT
Abstract: No abstract text available
Text: SO 8 PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 20 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHK31NQ03LT
PHK31NQ03LT
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PHK31NQ03LT
Abstract: No abstract text available
Text: SO 8 PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 3 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHK31NQ03LT
PHK31NQ03LT
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80n04
Abstract: V3-525 np80n04nug nec 80n04 MP-25ZP NP80N04NUG-S18-AY NP80N04PUG-E1B-AY NP80N04PUG-E2B-AY D1979
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04NUG, NP80N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER
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NP80N04NUG,
NP80N04PUG
NP80N04NUG
NP80N04PUG
NP80N04NUG-S18-AY
NP80N04PUG-E1B-AY
NP80N04PUG-E2B-AY
O-262
MP-25SK)
O-263
80n04
V3-525
nec 80n04
MP-25ZP
NP80N04NUG-S18-AY
NP80N04PUG-E1B-AY
NP80N04PUG-E2B-AY
D1979
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FET 4900
Abstract: sn63pb37 solder wire sn63pb37 solder datasheet 3042 bu series ET-3042 Sn63pB37 80Ni20Fe c 3042 et 312
Text: BU Series Accelerometers Product Features • • • • • • Wide Frequency Range Hermetically Sealed Rugged Shockproof Case Low Noise Standard and Low Profile Sizes Internal FET Preamplifier Applications • Communications • General sensing • Instrumentation
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1000Hz
FET 4900
sn63pb37 solder wire
sn63pb37 solder datasheet
3042
bu series
ET-3042
Sn63pB37
80Ni20Fe
c 3042
et 312
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50P03HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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TB50P03HDL/D
MTB50P03HDL
418B-03
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TP50P03
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TP50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50P03HDL HDTMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced h ig h -c e ll density HDTMOS power FET is
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TP50P03HDL/D
TP50P03
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4901 mosfet
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information MTP75N03HDL HD TM O S E-FET High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate ¥ This advanced high-cell density HDTMOS E -F E T is designed to withstand high energy in the avalanche and commutation modes.
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transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295
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3SK228
3SK239A
3SK309
3SK186
3SK295
3SK194
BB101M
BB101C
3SK296
2SC2732
transistor C5080
transistor 2SC458
C5247
Transistor 2SA 2SB 2SC 2SD
transistor 2sc1515
2SC1755A
transistor f 20 nf
C5246
A1052
C4965
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4435m
Abstract: 4431 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data S heet MTB50P03HDL HD TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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Untitled
Abstract: No abstract text available
Text: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm
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FLM4450-25F
-46dBc
FLM4450-25F
FCSI0499M200
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