LCB114
Abstract: LH136 IL485 ocm246 AC/DC drive PLA114 OCM22A OCMS246 ps7113 OCM243
Text: 2. OCMOS FET CROSS-REFERENCE 50 GBB-SB-0808 2. OCMOS FET CROSS-REFERENCE 2-1. MATSUSHITA ELECTRIC WORKS MATSUSHITA ELECTRIC WORKS 1 MATSUSHITA ELECTRIC PKG WORKS OUTPUT *1 Type VL IL PT Ron ton/toff (V) (mA) (mW) (Ω) (ms) MAX. MAX. MAX. MAX. MAX. Type Number
|
Original
|
GBB-SB-0808
AQV212S
PS7206-1A
AQV215S
PS7214-1A
AQV217S
PS7241-1A
AQV210S
IBB110P
16-SOP
LCB114
LH136
IL485
ocm246
AC/DC drive
PLA114
OCM22A
OCMS246
ps7113
OCM243
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
|
Original
|
BB305M
REJ03G0829-0600
ADE-208-607D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB305M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
|
Original
|
BB305C
REJ03G0828-0600
ADE-208-608D)
OT-343mod)
PTSP0004ZA-A
BB305C
|
PDF
|
BB305CEW
Abstract: 1SV70 BB305C
Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
|
Original
|
BB305C
REJ03G0828-0600
ADE-208-608D)
OT-343mod)
PTSP0004ZA-A
BB305C
BB305CEW
1SV70
|
PDF
|
1SV70
Abstract: BB305M
Text: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
|
Original
|
BB305M
REJ03G0829-0600
ADE-208-607D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB305M
1SV70
|
PDF
|
3SK319
Abstract: ADE-208-602 DSA003643
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
|
Original
|
3SK319
ADE-208-602
3SK319
ADE-208-602
DSA003643
|
PDF
|
3SK318
Abstract: DSA003643
Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
|
Original
|
3SK318
ADE-208-600
3SK318
DSA003643
|
PDF
|
3SK318
Abstract: 3SK318YB-TL-E 3SK318YB-TL
Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
|
Original
|
3SK318
REJ03G0819-0200
ADE-208-600)
PTSP0004ZA-A
3SK318
3SK318YB-TL-E
3SK318YB-TL
|
PDF
|
ADE-208-602
Abstract: 3SK319 3SK319YB-TL-E
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
|
Original
|
3SK319
REJ03G0820-0200
ADE-208-602)
PLSP0004ZA-A
ADE-208-602
3SK319
3SK319YB-TL-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
|
Original
|
3SK319
REJ03G0820-0200
ADE-208-602)
PLSP0004ZA-A
|
PDF
|
1SV70
Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
|
Original
|
BB305C
ADE-208-608D
OT-343mod)
BB305C
1SV70
Hitachi integrated circuit 1115
DSA003643
|
PDF
|
TM 1628 Datasheet
Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
Text: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
|
Original
|
BB305M
ADE-208-607D
200pF,
OT-143Rmod)
BB305M
TM 1628 Datasheet
607D
1SV70
Hitachi integrated circuit 1115
DSA003643
|
PDF
|
Hitachi DSA0076
Abstract: 1SV70 BB405M
Text: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)
|
Original
|
BB405M
ADE-208-718B
200pF,
OT-143
BB405M
Hitachi DSA0076
1SV70
|
PDF
|
JFET
Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
|
OCR Scan
|
2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
JFET
J-FET
2n4267
2N4303
2N4381
2N4393
2N3971
2N4119
2N4302
|
PDF
|
|
|
fet cross reference
Abstract: 2N4381 2N4302 fet 2N4304 JFET 2N5457 P-Channel JFET 2N3823 fet 2N4393 2N4303 2N4119
Text: Industry Part Number Type and Classification FET Cross Reference Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Conta Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
|
OCR Scan
|
2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
fet cross reference
2N4381
2N4302
fet 2N4304
JFET 2N5457
P-Channel JFET
2N3823 fet
2N4393
2N4303
2N4119
|
PDF
|
fet cross reference
Abstract: 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet
Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
|
OCR Scan
|
2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
fet cross reference
2N4302
2N4381
2N4393
JFET 2N5457
2N3B19
JFET
2N6568
2N4303
2n4416 jfet
|
PDF
|
TRANSISTOR m29
Abstract: MAM124 K 3053 TRANSISTOR
Text: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
|
OCR Scan
|
BF909;
BF909R
OT143R.
TRANSISTOR m29
MAM124
K 3053 TRANSISTOR
|
PDF
|
5558 op amp
Abstract: LH0101CK rets0101 LH0101 LH0101AC LH0101ACK LH0101AK LH0101AK-MIL LH0101C LH0101K
Text: LH0101 National Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 is a wideband power operational amplifier fea turing FET inputs, internal compensation, virtually no cross over distortion, and rapid settling time. These features make
|
OCR Scan
|
LH0101
TL/K/5558-16
TL/K/5S58-17
TL/K/5558-18
TL/K/5558-19
TL/K/5558-20
bS011E4
5558 op amp
LH0101CK
rets0101
LH0101AC
LH0101ACK
LH0101AK
LH0101AK-MIL
LH0101C
LH0101K
|
PDF
|
RETS0101AK
Abstract: 2266B 5791B HP1-T03-33CB
Text: LH0101/LH0101A/LH0101AC/LH0101C £ 3 National Semiconductor LH0101/LH0101C, LH0101A/LH0101AC Power Operational Amplifier G eneral Description Features The LH0101 is a wideband power operational amplifier fea turing FET Inputs, internal compensation, virtually no cross
|
OCR Scan
|
LH0101/LH0101A/LH0101AC/LH0101C
LH0101/LH0101C,
LH0101A/LH0101AC
LH0101
rateLH0101/LH0101A/LH0101AC/LH0101C
TL/K/5556-18
TL/K/5558-19
RETS0101AK
2266B
5791B
HP1-T03-33CB
|
PDF
|
HMF06300
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates
|
OCR Scan
|
Qailfl37
HMF-06300
HMF06300
|
PDF
|
LH0101 equivalent
Abstract: No abstract text available
Text: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea turing FET inputs, Internal compensation, virtually no cross over distortion, and rapid settling time. These features make
|
OCR Scan
|
LH0101
LH0101
LH0101 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
|
OCR Scan
|
HMF-03300
HMF-03300
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
|
OCR Scan
|
HMF-24000
Th680
|
PDF
|
"Harris microwave"
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC S HARRIS bDE D 7 ^ 4 1 4 2 Güllfin E DE HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
|
OCR Scan
|
HMF-03000
HMF-03000
"Harris microwave"
|
PDF
|
