NES1417B-30
Abstract: nec 1441
Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3
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NES1417B-30
NES1417B-30
nec 1441
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POUT36
Abstract: NES1821B-30 p1209
Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3
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NES1821B-30
NES1821B-30
POUT36
p1209
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LM2576 step-up converter
Abstract: Inverting Switching Regulators mc34166 Boost regulator FET Buck Controller NCV33063A NCP1442
Text: Numeric Data Sheet Listing Data Sheet Function Page CS51031 Fast P−Ch FET Buck Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 CS51033 Fast P−Ch FET Buck Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
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CS51031
CS51033
CS5112
100mA
CS51411,
CS51412,
CS51413,
CS51414
260kHz
520kHz,
LM2576 step-up converter
Inverting Switching Regulators
mc34166 Boost regulator
FET Buck Controller
NCV33063A
NCP1442
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTB60N05HDL SMD310
Text: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM
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MTB60N05HDL/D
MTB60N05HDL
AN569
MTB60N05HDL
SMD310
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MTP75N06HD
Abstract: AN569
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM
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MTP75N06HD/D
MTP75N06HD
MTP75N06HD/D*
MTP75N06HD
AN569
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MTH30N25E
Abstract: 84ac 2N3904 AN569
Text: Order this data sheet by MTH30N25E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data sheet ~esigner’s MTH30N25E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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MTH30N25E/D
MTH30N25E
O-218AC
MTH30N25E
84ac
2N3904
AN569
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AN569
Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM
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MTP75N06HD/D
MTP75N06HD
MTP75N06HD/D*
AN569
MTP75N06HD
HDTMOS
TRANSISTOR motorola 838
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AN569
Abstract: U425
Text: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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MTH6N100E/D
O-218AC
AN569
U425
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2N3904
Abstract: AN569 MTP4N50E
Text: MOTOROLA Order this document by MTP4N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP4N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1.5 OHMS
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MTP4N50E/D
MTP4N50E
MTP4N50E/D*
2N3904
AN569
MTP4N50E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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MTB50P03HDL/D
MTB50P03HDL
MTB50P03HDL/D*
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AN569
Abstract: MTD20P03HDL SMD310
Text: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM
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MTD20P03HDL/D
MTD20P03HDL
MTD02P03HDL/D*
AN569
MTD20P03HDL
SMD310
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AN569
Abstract: MTD20N03HDL SMD310
Text: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount MTD20N03HDL Designer's Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM
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MTD20N03HDL/D
MTD20N03HDL
AN569
MTD20N03HDL
SMD310
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MTP3N6
Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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MTP3N60E/D
MTP3N60E
MTP3N6
MTP3N60E
2N3904
AN569
tl 2N3904 TRANSISTOR
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AN569
Abstract: MTB50P03HDL SMD310 MOSFET sot-143
Text: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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MTB50P03HDL/D
MTB50P03HDL
AN569
MTB50P03HDL
SMD310
MOSFET sot-143
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AN569
Abstract: MTD20N03HDL SMD310
Text: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20N03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM
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MTD20N03HDL/D
MTD20N03HDL
MTD20N03HDL/D*
AN569
MTD20N03HDL
SMD310
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2N3904
Abstract: AN569 MTP3N60E
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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MTP3N60E
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2N3904
AN569
MTP3N60E
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TFK S 417 T
Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6
Text: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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MTM24N45E/D
MTM24N45E
do2510
97A-02
O-204AE
TFK S 417 T
tfk s 417
TFK U 3201 M
tfk 830
tfk 417
500C
AN569
MTM24N45E
tfk 145
TFK A 6
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motorola an569 thermal
Abstract: diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications
Text: Order this data sheet by MTM10N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 10 AMPERES rDS on = 1-2 OHMS 1000 VOLTS N-Ctiannel Enhancem ent-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to with
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MTM10N1OOE/D
MTM10N100E/D
MTM10N100E/D
motorola an569 thermal
diode zener motorola
MTM10N100E
2N3904
AN569
AN569 in Motorola Power Applications
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MTM24N45E
Abstract: 2N3904 AN569 DS3905 2N3904 on semiconductors application note 2N3904 MOTOROLA
Text: Order this data sheet by MTM24N45E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silicon Gate T M O S PO W ER FET 24 A M P E R E S This advanced high voltage TMOS E-FET is designed to with
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MTM24N45E/D
MTM24N45E/D
MTM24N45E
2N3904
AN569
DS3905
2N3904 on semiconductors application note
2N3904 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to
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MTP75N06HD/D
MTP75N06HD
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
21A-06,
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MOSFET 4418
Abstract: low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on - 0.06 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-03
0E-02
0E-01
35Cms
MOSFET 4418
low voltage power transistor
33n 10e
33n10e
mosfet 4419
4418 mosfet
S 170 MOSFET TRANSISTOR
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MTH13N50E
Abstract: No abstract text available
Text: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET
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MTH13N50E/D
MTH13N50E
swi065
O-218AC
C66760
MTH13N50E
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