PMF3800SN
Abstract: 03ab09
Text: PMF3800SN N-channel TrenchMOS standard level FET Rev. 01 — 8 February 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PMF3800SN
OT323
SC-70)
PMF3800SN
03ab09
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BUK7C06-40AITE
Abstract: No abstract text available
Text: BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including
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BUK7C06-40AITE
BUK7C06-40AITE
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PMV65XP
Abstract: No abstract text available
Text: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMV65XP
PMV65XP
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2N7002F
Abstract: No abstract text available
Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible
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2N7002F
mbb076
2N7002F
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PHB33NQ20T
Abstract: PHP33NQ20T
Text: PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
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PHP/PHB33NQ20T
PHB33NQ20T
PHP33NQ20T
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Untitled
Abstract: No abstract text available
Text: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMV65XP
003aaa671
771-PMV65XP-T/R
PMV65XP
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1.4944
Abstract: 2N7002E
Text: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible
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2N7002E
mbb076
1.4944
2N7002E
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PMWD16UN
Abstract: No abstract text available
Text: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PMWD16UN
PMWD16UN
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PH7030L
Abstract: No abstract text available
Text: PH7030L N-channel TrenchMOS logic level FET Rev. 04. — 7 March 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features
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PH7030L
PH7030L
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15218
Abstract: 15218 pin details SOT323 FET N PMF3800SN
Text: PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PMF3800SN
OT323
15218
15218 pin details
SOT323 FET N
PMF3800SN
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PH3075L
Abstract: 14603
Text: PH3075L N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PH3075L
PH3075L
14603
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PHX18NQ11T
Abstract: No abstract text available
Text: PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a fully isolated plastic package using TrenchMOS™ technology.
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PHX18NQ11T
PHX18NQ11T
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03aa03
Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
Text: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible
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2N7002
mbb076
03aa03
2N7002 SOT23
data sheet transistor 2n7002
philips 2n7002
2n7002 philips
equivalent of 2N7002
2n7002-1
"Field Effect Transistor"
2N7002 equivalent
2N7002* application
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PH16030L
Abstract: No abstract text available
Text: PH16030L N-channel TrenchMOS logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PH16030L
PH16030L
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PMV117EN215
Abstract: PMV117EN
Text: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PMV117EN
mbb076
771-PMV117EN215
PMV117EN
PMV117EN215
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PHP75NQ08T
Abstract: No abstract text available
Text: PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 01 — 13 April 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PHP75NQ08T
PHP75NQ08T
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PHD 73
Abstract: PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108
Text: PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PHB/PHD/PHU108NQ03LT
PHD 73
PHU108NQ03LT
phb108nq03lt
PHD108NQ03LT
PHP108NQ03LT
PHB108
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PHP45NQ15T
Abstract: PHB45NQ15T
Text: PHP/PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
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PHP/PHB45NQ15T
PHP45NQ15T
PHB45NQ15T
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PMWD20XN
Abstract: No abstract text available
Text: PMWD20XN Dual N-channel µTrenchMOS extremely low level FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PMWD20XN
PMWD20XN
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PMWD26UN
Abstract: No abstract text available
Text: PMWD26UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMWD26UN
PMWD26UN
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K638
Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a
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BUK638-1000A/B
0G44744
BUK638
-1000A
-1000B
K638-1OOOA/B
711Gfi5b
04M74L
K638
transistor S52
DIODE 1000a
fet 1000A
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK627-500B
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K638
Abstract: idm 73
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK638-800A/B
711Gfl2b
BUKS38
-800A
K638-800A/B
K638
idm 73
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Untitled
Abstract: No abstract text available
Text: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK638-1000A/B
7110fiEb
BUK638
BUK638-10OOA/B
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