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    FET GAAS MARKING A Search Results

    FET GAAS MARKING A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    FET GAAS MARKING A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSO05553

    Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 GSO05553 Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65

    GaAs FET cfy 19

    Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1394 Q62702-F1393 GSO05553 GaAs FET cfy 19 CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    gaas fet marking B

    Abstract: FET GAAS marking a PS720C
    Text: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1  LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS


    Original     		PDF PS720C-1A PS720C-1A gaas fet marking B FET GAAS marking a PS720C

    HMC216MS8

    Abstract: No abstract text available
    Text: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations


    Original     		PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8

    FSC60ML

    Abstract: FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
    Text: FSC60ML General Purpose GaAs FET FEATURES • Low Noise Figure: NF=0.8dB Typ. @ f=4GHz • High Associated Gain: Gas=11dB (Typ.) @ f=4GHz • Small Size: 6 pin Plastic Package for SMT Applications. DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate


    Original     		PDF FSC60ML FSC60ML FCSI0598M200 FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817

    GaAs FET cfy 14

    Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19

    NO2-B1

    Abstract: No abstract text available
    Text: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 6.3 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7802B-1A PS7802B-1A PS72xx NO2-B1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Solid State Relay OCMOS FET PS7801F-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 0.9 pF 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801F-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7801F-1A PS7801F-1A PS72xx

    PS7801K-1A

    Abstract: PS7801K-1A-F3-A
    Text: Solid State Relay OCMOS FET PS7801K-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 1.6 pF , 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7801K-1A PS7801K-1A PS72xx PS7801K-1A-F3-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Solid State Relay OCMOS FET PS7801M-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 3.4 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7801M-1A PS7801M-1A PS72xx

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7802A-1A PS7802A-1A PS72xx

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801M-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 3 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7801M-1A PS7801M-1A PS72xx

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Solid State Relay OCMOS FET PS7804-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7804-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7804-1A PS7804-1A PS72xx

    PS7802A-1A

    Abstract: PS7802A-1A-A PS7802A-1A-F3 PS7802A-1A-F3-A
    Text: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7802A-1A PS7802A-1A PS72xx PS7802A-1A-A PS7802A-1A-F3 PS7802A-1A-F3-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Solid State Relay OCMOS FET PS7801K-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 1.6 pF , 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PDF PS7801K-1A PS7801K-1A PS72xx

    P012

    Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		PDF V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a

    Siemens A 1458

    Abstract: FET marking code 365
    Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,


    OCR Scan     		PDF CLY15 Q62702-L99 Siemens A 1458 FET marking code 365

    CLY10

    Abstract: No abstract text available
    Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J


    OCR Scan     		PDF CLY10 Q62702-L94 CLY10

    CFY30

    Abstract: CFY 18
    Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation


    OCR Scan     		PDF CFY30 Q62703-F97 OT-143 CFY30 CFY 18

    SIEMENS 230 92 O

    Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
    Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation


    OCR Scan     		PDF CFY30 Q62703-F97 OT-143 SIEMENS 230 92 O siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS

    siemens gaas fet

    Abstract: gaas fet marking J
    Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		PDF S0S163 Q62702-L90 615ms i77mS- 417ps siemens gaas fet gaas fet marking J